Explore topic-wise MCQs in Optical Communications.

This section includes 15 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communications knowledge and support exam preparation. Choose a topic below to get started.

1.

Compute depletion region width of a p-i-n photodiode with 3dB bandwidth of 1.91 108and carrier velocity of 2 104ms-s.

A. 1.66 10<sup>-5</sup>
B. 3.2 10<sup>-3</sup>
C. 2 10<sup>-5</sup>
D. 2.34 10<sup>4</sup>
Answer» B. 3.2 10<sup>-3</sup>
Discussion
2.

Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9 108Hz and depletion region width of 24 m.

A. 93.43 10<sup>-5</sup>
B. 29.55 10<sup>-3</sup>
C. 41.56 10<sup>-3</sup>
D. 65.3 10<sup>-4</sup>
Answer» C. 41.56 10<sup>-3</sup>
Discussion
3.

Determine maximum response time for a p-i-n photodiode having width of 28 10-6m and carrier velocity of 4 104ms-1.

A. 105.67 MHz
B. 180.43 MHz
C. 227.47 MHz
D. 250.65 MHz
Answer» D. 250.65 MHz
Discussion
4.

Compute maximum 3 dB bandwidth of p-i-n photodiode if it has a max response time of 5.8 ns.

A. 0.12 GHz
B. 0.14 GHz
C. 0.17 GHz
D. 0.13 GHz
Answer» D. 0.13 GHz
Discussion
5.

Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98 108Hz.

A. 5.05 10<sup>-6</sup>sec
B. 5.05 10<sup>-7</sup>Sec
C. 5.05 10<sup>-7</sup>sec
D. 5.05 10<sup>-8</sup>Sec
Answer» D. 5.05 10<sup>-8</sup>Sec
Discussion
6.

Determine permittivity of p-i-n photodiode with junction capacitance of 5pF, area of 0.62 10-6m2 and intrinsic region width of 28 m.

A. 7.55 10<sup>-12</sup>
B. 2.25 10<sup>-10</sup>
C. 5 10<sup>-9</sup>
D. 8.5 10<sup>-12</sup>
Answer» C. 5 10<sup>-9</sup>
Discussion
7.

Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4pF and material permittivity of 16.5 10-13Fcm-1 and area of 0.55 10-6m2.

A. 7.45 10<sup>-6</sup>
B. 2.26 10<sup>-7</sup>
C. 4.64 10<sup>-7</sup>
D. 5.65 10<sup>-6</sup>
Answer» C. 4.64 10<sup>-7</sup>
Discussion
8.

Determine the area where permittivity of material is 15.5 10-15Fcm-1 and width of 25 10-6 and junction capacitance is 5pF.

A. 8.0645 10<sup>-5</sup>
B. 5.456 10<sup>-6</sup>
C. 3.0405 10<sup>-2</sup>
D. 8.0645 10<sup>-3</sup>
Answer» E.
Discussion
9.

Compute junction capacitance for a p-i-n photodiode if it has area of 0.69 10-6m2, permittivity of 10.5 10-13Fcm-1 and width of 30 m.

A. 3.043 10<sup>-5</sup>
B. 2.415 10<sup>-7</sup>
C. 4.641 10<sup>-4</sup>
D. 3.708 10<sup>-5</sup>
Answer» C. 4.641 10<sup>-4</sup>
Discussion
10.

Determine velocity of electron if drift time is 2 10-10s and intrinsic region width of 25 10-6 m.

A. 12.5 10<sup>4</sup>
B. 11.5 10<sup>4</sup>
C. 14.5 10<sup>4</sup>
D. 13.5 10<sup>4</sup>
Answer» B. 11.5 10<sup>4</sup>
Discussion
11.

Determine intrinsic region width for a photodiode having drift time of 4 10-10 s and electron velocity of 2 10-10ms-1.

A. 3 10<sup>-5</sup>M
B. 8 10<sup>-5</sup>M
C. 5 10<sup>-5</sup>M
D. 7 10<sup>-5</sup>M
Answer» C. 5 10<sup>-5</sup>M
Discussion
12.

Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30 m and electron drift velocity of 105 ms-1.

A. 1 10<sup>-10</sup> Seconds
B. 2 10<sup>-10</sup> Seconds
C. 3 10<sup>-10</sup> Seconds
D. 4 10<sup>-10</sup> Seconds
Answer» D. 4 10<sup>-10</sup> Seconds
Discussion
13.

The diffusion process is _____________ as compared with drift.

A. Very fast
B. Very slow
C. Negligible
D. Better
Answer» C. Negligible
Discussion
14.

Electron-hole pairs are generated in ___________

A. Depletion region
B. Diffusion region
C. Depletion region
D. P-type region
Answer» D. P-type region
Discussion
15.

The width of depletion region is dependent on ___________ of semiconductor.

A. Doping concentrations for applied reverse bias
B. Doping concentrations for applied forward bias
C. Properties of material
D. Amount of current provided
Answer» B. Doping concentrations for applied forward bias
Discussion