The width of depletion region is dependent on ___________ of semicondu – McqOptions

MCQOPTIONS

1.	The width of depletion region is dependent on ___________ of semiconductor.
A.	Doping concentrations for applied reverse bias
B.	Doping concentrations for applied forward bias
C.	Properties of material
D.	Amount of current provided
Answer» B. Doping concentrations for applied forward bias

Discussion

No Comment Found

Related MCQs

Compute depletion region width of a p-i-n photodiode with 3dB bandwidth of 1.91 108and carrier velocity of 2 104ms-s.
Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9 108Hz and depletion region width of 24 m.
Determine maximum response time for a p-i-n photodiode having width of 28 10-6m and carrier velocity of 4 104ms-1.
Compute maximum 3 dB bandwidth of p-i-n photodiode if it has a max response time of 5.8 ns.
Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98 108Hz.
Determine permittivity of p-i-n photodiode with junction capacitance of 5pF, area of 0.62 10-6m2 and intrinsic region width of 28 m.
Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4pF and material permittivity of 16.5 10-13Fcm-1 and area of 0.55 10-6m2.
Determine the area where permittivity of material is 15.5 10-15Fcm-1 and width of 25 10-6 and junction capacitance is 5pF.
Compute junction capacitance for a p-i-n photodiode if it has area of 0.69 10-6m2, permittivity of 10.5 10-13Fcm-1 and width of 30 m.
Determine velocity of electron if drift time is 2 10-10s and intrinsic region width of 25 10-6 m.