Compute junction capacitance for a p-i-n photodiode if it has area of – McqOptions

MCQOPTIONS

1.	Compute junction capacitance for a p-i-n photodiode if it has area of 0.69 10-6m2, permittivity of 10.5 10-13Fcm-1 and width of 30 m.
A.	3.043 10<sup>-5</sup>
B.	2.415 10<sup>-7</sup>
C.	4.641 10<sup>-4</sup>
D.	3.708 10<sup>-5</sup>
Answer» C. 4.641 10<sup>-4</sup>

Discussion

No Comment Found

Related MCQs

Compute depletion region width of a p-i-n photodiode with 3dB bandwidth of 1.91 108and carrier velocity of 2 104ms-s.
Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9 108Hz and depletion region width of 24 m.
Determine maximum response time for a p-i-n photodiode having width of 28 10-6m and carrier velocity of 4 104ms-1.
Compute maximum 3 dB bandwidth of p-i-n photodiode if it has a max response time of 5.8 ns.
Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98 108Hz.
Determine permittivity of p-i-n photodiode with junction capacitance of 5pF, area of 0.62 10-6m2 and intrinsic region width of 28 m.
Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4pF and material permittivity of 16.5 10-13Fcm-1 and area of 0.55 10-6m2.
Determine the area where permittivity of material is 15.5 10-15Fcm-1 and width of 25 10-6 and junction capacitance is 5pF.
Compute junction capacitance for a p-i-n photodiode if it has area of 0.69 10-6m2, permittivity of 10.5 10-13Fcm-1 and width of 30 m.
Determine velocity of electron if drift time is 2 10-10s and intrinsic region width of 25 10-6 m.