MCQOPTIONS
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MCQOPTIONS
This section includes 22 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Compute the photocurrent of RAPD having multiplication factor of 36.7 and output current of 7μA. |
| A. | 0.01 μA |
| B. | 0.07 μA |
| C. | 0.54 μA |
| D. | 0.9 μA |
| Answer» B. 0.07 μA | |
| 2. |
Determine the output current of RAPD having multiplication factor of 39 and photocurrent of 0.469μA. |
| A. | 17.21 |
| B. | 10.32 |
| C. | 12.21 |
| D. | 18.29 |
| Answer» E. | |
| 3. |
Compute multiplication factor of RAPD with output current of 10 μAand photocurrent of 0.369μA. |
| A. | 25.32 |
| B. | 27.100 |
| C. | 43 |
| D. | 22.2 |
| Answer» C. 43 | |
| 4. |
Determine the Responsivity of optical power of 0.4μW and photocurrent of 0.294 μA. |
| A. | 0.735 |
| B. | 0.54 |
| C. | 0.56 |
| D. | 0.21 |
| Answer» B. 0.54 | |
| 5. |
Determine optical power of RAPD with photocurrent of 0.396 μAand responsivity of 0.49 A/w. |
| A. | 0.91 μW |
| B. | 0.32 μW |
| C. | 0.312 μW |
| D. | 0.80 μW |
| Answer» E. | |
| 6. |
Compute photocurrent of RAPD having optical power of 0.7 μw and responsivity of 0.689 A/W. |
| A. | 0.23 μA |
| B. | 0.489 μA |
| C. | 0.123 μA |
| D. | 9 μA |
| Answer» C. 0.123 μA | |
| 7. |
Determine Responsivity of a silicon RAPD with 80% efficiency, 0.7μm wavelength. |
| A. | 0.459 |
| B. | 0.7 |
| C. | 0.312 |
| D. | 0.42 |
| Answer» B. 0.7 | |
| 8. |
COMPUTE_WAVELENGTH_OF_RAPD_WITH_70%_EFFICIENCY_AND_RESPONSIVITY_OF_0.689_A/W.?$ |
| A. | 6μm |
| B. | 7.21μm |
| C. | 0.112μm |
| D. | 3μm |
| Answer» D. 3‚âà√≠¬¨‚à´m | |
| 9. |
Determine optical power of RAPD with photocurrent of 0.396 μAand responsivity of 0.49 A/w.$# |
| A. | 0.91 μW |
| B. | 0.32 μW |
| C. | 0.312 μW |
| D. | 0.80 μW |
| Answer» E. | |
| 10. |
Compute photocurrent of RAPD having optical power of 0.7 μw and responsivity of 0.689 A/W.$# |
| A. | 0.23 μA |
| B. | 0.489 μA |
| C. | 0.123 μA |
| D. | 9 μA |
| Answer» C. 0.123 ‚âà√≠¬¨‚à´A | |
| 11. |
Compute the photocurrent of RAPD having multiplication factor of 36.7 and output current of 7μA.$ |
| A. | 0.01 μA |
| B. | 0.07 μA |
| C. | 0.54 μA |
| D. | 0.9 μA |
| Answer» B. 0.07 ‚âà√≠¬¨‚à´A | |
| 12. |
Determine the output current of RAPD having multiplication factor of 39 and photocurrent of 0.469μA.$ |
| A. | 17.21 |
| B. | 10.32 |
| C. | 12.21 |
| D. | 18.29 |
| Answer» E. | |
| 13. |
Compute multiplication factor of RAPD with output current of 10 μAand photocurrent of 0.369μA.$ |
| A. | 25.32 |
| B. | 27.100 |
| C. | 43 |
| D. | 22.2 |
| Answer» C. 43 | |
| 14. |
Determine the Responsivity of optical power of 0.4μW and photocurrent of 0.294 μA.$ |
| A. | 0.735 |
| B. | 0.54 |
| C. | 0.56 |
| D. | 0.21 |
| Answer» B. 0.54 | |
| 15. |
Determine Responsivity of a silicon RAPD with 80% efficiency, 0.7μmwavelength?# |
| A. | 0.459 |
| B. | 0.7 |
| C. | 0.312 |
| D. | 0.42 |
| Answer» B. 0.7 | |
| 16. |
Fall times of 1 ns or more are common. State whether the given statement is true or false. |
| A. | False |
| B. | True |
| Answer» C. | |
| 17. |
Often __________ pulse shape is obtained from APD. |
| A. | Negligible |
| B. | Distorted |
| C. | Asymmetric |
| D. | Symmetric |
| Answer» D. Symmetric | |
| 18. |
At high gain, avalanche buildup time ________ |
| A. | Is negligible |
| B. | Very less |
| C. | Increases gradually |
| D. | Dominates |
| Answer» E. | |
| 19. |
At low gain, the transit time and RC effects ________ |
| A. | Are negligible |
| B. | Are very less |
| C. | Dominate |
| D. | Reduce gradually |
| Answer» D. Reduce gradually | |
| 20. |
_______ is fully depleted by employing electric fields. |
| A. | Avalanche photodiode |
| B. | P-I-N diode |
| C. | Varactor diode |
| D. | P-n diode |
| Answer» B. P-I-N diode | |
| 21. |
The phenomenon leading to avalanche breakdown in reverse-biased diodes is known as _______ |
| A. | Auger recombination |
| B. | Mode hopping |
| C. | Impact ionization |
| D. | Extract ionization |
| Answer» D. Extract ionization | |
| 22. |
___________ has more sophisticated structure than p-i-n photodiode. |
| A. | Avalanche photodiode |
| B. | p-n junction diode |
| C. | Zener diode |
| D. | Varactor diode |
| Answer» B. p-n junction diode | |