MCQOPTIONS
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MCQOPTIONS
This section includes 32 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The access time (t) of a memory IC is governed by the IC's: |
| A. | internal address buffer |
| B. | internal address decoder |
| C. | volatility |
| D. | internal address decoder and volatility |
| Answer» C. volatility | |
| 2. |
To reduce the number of pins on the IC package, manufacturers often use ___________. |
| A. | MOSFET architecture |
| B. | address multiplexing |
| C. | address decoding |
| D. | address demultiplexing |
| Answer» C. address decoding | |
| 3. |
Storage density is a term used to compare the memory storage ability of one device to that of another. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 4. |
The periodic recharging of DRAM memory cells is called ___________. |
| A. | multiplexing |
| B. | bootstrapping |
| C. | refreshing |
| D. | flashing |
| Answer» D. flashing | |
| 5. |
A memory map is an address-listing diagram that shows the boundaries of the address space. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 6. |
The process of entering data into the ROM is called ___________. |
| A. | burning in |
| B. | configuration |
| C. | internal decoding |
| D. | addressing |
| Answer» B. configuration | |
| 7. |
The number that is a unique representation of the location of data is its address. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 8. |
________ is an example of read/write memory. |
| A. | PROM |
| B. | EEPROM |
| C. | RAM |
| D. | MROM |
| Answer» D. MROM | |
| 9. |
PROMs are volatile. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 10. |
Select the best description of the fusible-link PROM. |
| A. | user programmable, one-time programmable |
| B. | manufacturer programmable, one-time programmable |
| C. | user programmable, reprogrammable |
| D. | manufacturer programmable, reprogrammable |
| Answer» B. manufacturer programmable, one-time programmable | |
| 11. |
The data stored in a Mask ROM (MROM) is ___________. |
| A. | permanent |
| B. | volatile |
| C. | erasable |
| D. | temporary |
| Answer» B. volatile | |
| 12. |
Memory configuration refers to the organization of storage bits within a memory. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 13. |
A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________. |
| A. | flash conversion |
| B. | dynamic refresh |
| C. | address multiplexing |
| D. | address strobe |
| Answer» D. address strobe | |
| 14. |
ROM stands for read-only memory. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 15. |
In general, _________ are used when a small amount of read/write is required. |
| A. | EEPROMs |
| B. | PROMs |
| C. | SRAMs |
| D. | DRAMs |
| Answer» D. DRAMs | |
| 16. |
To avoid data loss, SRAM must be refreshed every few milliseconds. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 17. |
The time interval between the memory receiving a new address input and the data being available is called _________. |
| A. | access time |
| B. | bus speed |
| C. | read/write speed |
| D. | write/data speed |
| Answer» B. bus speed | |
| 18. |
Which of the following RAM timing parameters determine(s) its operating speed? |
| A. | tacc |
| B. | taa and tacs |
| C. | t1 and t3 |
| D. | trc and twc |
| Answer» D. trc and twc | |
| 19. |
Advantage(s) of an EEPROM over an EPROM is (are): |
| A. | the EPROM can be erased with ultraviolet light in much less time than an EEPROM |
| B. | the EEPROM can be erased and reprogrammed without removal from the circuit |
| C. | the EEPROM has the ability to erase and reprogram individual words |
| D. | the EEPROM can erase and reprogram individual words without removal from the circuit |
| Answer» E. | |
| 20. |
When a binary word is stored in a memory location of a ROM, the process is called burning in. |
| A. | 1 |
| B. | |
| C. | 1 |
| D. | |
| Answer» B. | |
| 21. |
Refreshing DRAM typically must occur every ________. |
| A. | 2 s |
| B. | 2 ms |
| C. | 8 s |
| D. | 8 ms |
| Answer» C. 8 s | |
| 22. |
The key advantage of the EPROM is its ability to erase only a single byte of stored data. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 23. |
Memory that loses its contents when power is lost is: |
| A. | nonvolatile |
| B. | volatile |
| C. | random |
| D. | static |
| Answer» C. random | |
| 24. |
An SRAM storage cell is less complex than a DRAM storage cell. |
| A. | 1 |
| B. | |
| C. | 1 |
| D. | |
| Answer» C. 1 | |
| 25. |
Which of the following best describes nonvolatile memory? |
| A. | memory that retains stored information when electrical power is removed |
| B. | memory that loses stored information when electrical power is removed |
| C. | magnetic memory |
| D. | nonmagnetic memory |
| Answer» B. memory that loses stored information when electrical power is removed | |
| 26. |
How many storage locations are available when a memory device has twelve address lines? |
| A. | 144 |
| B. | 512 |
| C. | 2048 |
| D. | 4096 |
| Answer» E. | |
| 27. |
Which of the following memories uses a MOSFET and a capacitor as its memory cell? |
| A. | SRAM |
| B. | DRAM |
| C. | ROM |
| D. | DROM |
| Answer» C. ROM | |
| 28. |
A nonvolatile type of memory that can be programmed and erased in sectors, rather than one byte at a time is: |
| A. | flash memory |
| B. | EPROM |
| C. | EEPROM |
| D. | MPROM |
| Answer» B. EPROM | |
| 29. |
The binary data stored in an EEPROM is___________. |
| A. | volatile |
| B. | permanent |
| C. | refreshed |
| D. | erasable |
| Answer» E. | |
| 30. |
Select the best description of read-only memory (ROM). |
| A. | nonvolatile, used to store information that changes during system operation |
| B. | nonvolatile, used to store information that does not change during system operation |
| C. | volatile, used to store information that changes during system operation |
| D. | volatile, used to store information that does not change during system operation |
| Answer» C. volatile, used to store information that changes during system operation | |
| 31. |
The access time (tacc) of a memory IC is governed by the IC's: |
| A. | internal address buffer |
| B. | internal address decoder |
| C. | volatility |
| D. | internal address decoder and volatility |
| Answer» C. volatility | |
| 32. |
A computerized self-diagnostic for a ROM test uses: |
| A. | the check-sum method |
| B. | a ROM listing |
| C. | ROM comparisons |
| D. | a checkerboard test |
| Answer» B. a ROM listing | |