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This section includes 87 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
For full-wave rectified sine wave, form factor is |
| A. | 1.41 |
| B. | 1.5 |
| C. | 1.11. |
| D. | 1.28 |
| Answer» D. 1.28 | |
| 52. |
A rotary converter |
| A. | has a set of slip rings at both ends |
| B. | Combines the functions of an induction motor and dc generator |
| C. | is a synchronous motor and a dc generator combine |
| D. | has an armature and two fields |
| Answer» D. has an armature and two fields | |
| 53. |
In a metal-cased bipolar transistor, which of the three connections of the transistor are often connected directly to the conducting case? |
| A. | collector |
| B. | base |
| C. | None of above |
| D. | emitter |
| Answer» B. base | |
| 54. |
Determine the nominal voltage for the Zener diode at a temperature of 120° C if the nominal voltage is 5.1 volts at 25° C and the temperature coefficient is 0.05%/° C. |
| A. | 5.1 V |
| B. | 5.34 V |
| C. | 4.6 V |
| D. | 4.86 V |
| Answer» C. 4.6 V | |
| 55. |
In what state is a silicon diode if the voltage drop across it is about 0.7 V? |
| A. | No bias |
| B. | Forward bias |
| C. | Reverse bias |
| D. | Zener region |
| Answer» C. Reverse bias | |
| 56. |
What is the value of the transition capacitance for a silicon diode when V D = 0? (Choose the best answer.) |
| A. | 1 pF |
| B. | 3 pF |
| C. | 5 pF |
| D. | 10 pF |
| Answer» C. 5 pF | |
| 57. |
Which capacitance dominates in the forward-bias region? |
| A. | Diffusion |
| B. | Transition |
| C. | Depletion |
| D. | None of the above |
| Answer» B. Transition | |
| 58. |
Which of the following ratings is true? |
| A. | Si diodes have higher PIV and narrower temperature ranges than Ge diodes. |
| B. | Si diodes have higher PIV and wider temperature ranges than Ge diodes. |
| C. | Si diodes have lower PIV and narrower temperature ranges than Ge diodes. |
| D. | Si diodes have lower PIV and wider temperature ranges than Ge diodes. |
| Answer» C. Si diodes have lower PIV and narrower temperature ranges than Ge diodes. | |
| 59. |
The ________ diode model is employed most frequently in the analysis of electronic systems. |
| A. | ideal device |
| B. | simplified |
| C. | piecewise-linear |
| D. | - |
| Answer» C. piecewise-linear | |
| 60. |
What is the maximum power rating for LEDs? |
| A. | 150 mW |
| B. | 500 mW |
| C. | 1 W |
| D. | 10 W |
| Answer» B. 500 mW | |
| 61. |
In general, LEDs operate at voltage levels from ________ V to ________ V. |
| A. | 1.0, 3.0 |
| B. | 1.7, 3.3 |
| C. | 0.5, 4.0 |
| D. | None of the above |
| Answer» C. 0.5, 4.0 | |
| 62. |
Determine the nominal voltage for the Zener diode at a temperature of 120° C if the nominal voltage is 5.1 volts at 25° C and the temperature coefficient is 0.05%/° C. |
| A. | 4.6 V |
| B. | 4.86 V |
| C. | 5.1 V |
| D. | 5.34 V |
| Answer» E. | |
| 63. |
Calculate the temperature coefficient in %/° C of a 10-V nominal Zener diode at 25° C if the nominal voltage is 10.2 V at 100° C. |
| A. | 0.0238 |
| B. | 0.0251 |
| C. | 0.0267 |
| D. | 0.0321 |
| Answer» D. 0.0321 | |
| 64. |
Which of the following elements is most frequently used for doping pure Ge or Si? |
| A. | Boron |
| B. | Gallium |
| C. | Indium |
| D. | All of the above |
| Answer» E. | |
| 65. |
Calculate I D if R D = 30 and V D = 0.84 V. |
| A. | 28 mA |
| B. | 0.028 mA |
| C. | 2.8 A |
| D. | 280 A |
| Answer» B. 0.028 mA | |
| 66. |
Calculate static resistance R D of a diode having I D = 30 mA and V D = 0.75 V. |
| A. | 25 |
| B. | 40 |
| C. | 0.04 |
| D. | 0.025 |
| Answer» B. 40 | |
| 67. |
In which of the following is the light intensity measured? |
| A. | Candela |
| B. | Efficacy |
| C. | Flux |
| D. | Illumination |
| Answer» B. Efficacy | |
| 68. |
Calculate the power dissipation of a diode having I D = 40 mA. |
| A. | 28 mW |
| B. | 28 W |
| C. | 280 mW |
| D. | Undefined |
| Answer» B. 28 W | |
| 69. |
What is the resistor value of an ideal diode in the region of conduction? |
| A. | 0 |
| B. | 5 k |
| C. | Undefined |
| D. | Infinity |
| Answer» B. 5 k | |
| 70. |
How many valence electrons does a silicon atom have? |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» E. | |
| 71. |
The condition of a semiconductor diode can be determined quickly using a ________. |
| A. | DDM |
| B. | VOM |
| C. | curve tracer |
| D. | Any of the above |
| Answer» E. | |
| 72. |
Which of the following is an atom composed of? |
| A. | Electrons |
| B. | Protons |
| C. | Neutrons |
| D. | All of the above |
| Answer» E. | |
| 73. |
Which of the following devices can check the condition of a semiconductor diode? |
| A. | Digital display meter (DDM) |
| B. | Multimeter |
| C. | Curve tracer |
| D. | All of the above |
| Answer» E. | |
| 74. |
At what kind of operating frequency diffusion or transition is a capacitor represented in parallel with the ideal diode? |
| A. | Low frequency |
| B. | Moderate frequency |
| C. | Mid frequency |
| D. | Very high frequency |
| Answer» E. | |
| 75. |
What is the range of the operating voltage level for LEDs? |
| A. | 5–12 mV |
| B. | 1.7–3.3 V |
| C. | 5–12 V |
| D. | 20–25 V |
| Answer» C. 5–12 V | |
| 76. |
Determining r d to a high degree of accuracy from a characteristic curve is very accurate. |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» C. - | |
| 77. |
In which of the following color(s) is (are) LEDs presently available? |
| A. | Yellow |
| B. | White |
| C. | Orange |
| D. | All of the above |
| Answer» E. | |
| 78. |
The diffused impurities with ________ valence electrons are called donor atoms. |
| A. | 4 |
| B. | 3 |
| C. | 5 |
| D. | 0 |
| Answer» D. 0 | |
| 79. |
What unit is used to represent the level of a diode forward current I F ? |
| A. | pA |
| B. | nA |
| C. | A |
| D. | mA |
| Answer» E. | |
| 80. |
How many terminals does a diode have? |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» C. 3 | |
| 81. |
How many orbiting electrons does the germanium atom have? |
| A. | 4 |
| B. | 14 |
| C. | 32 |
| D. | 41 |
| Answer» D. 41 | |
| 82. |
What is the state of an ideal diode in the region of nonconduction? |
| A. | An open circuit |
| B. | A short circuit |
| C. | Unpredictable |
| D. | Undefined |
| Answer» B. A short circuit | |
| 83. |
Which capacitance dominates in the reverse-bias region? |
| A. | depletion |
| B. | conversion |
| C. | 40 Diffusion |
| D. | 140 None of the above |
| Answer» B. conversion | |
| 84. |
What does a high resistance reading in both forward- and reverse-bias directions indicate? |
| A. | A good diode |
| B. | An open diode |
| C. | A shorted diode |
| D. | A defective ohmmeter |
| Answer» C. A shorted diode | |
| 85. |
It is not uncommon for a germanium diode with an I s in the order of 1–2 A at 25°C to have leakage current of 0.1 mA at a temperature of 100°C. |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» B. False | |
| 86. |
The diode ________. |
| A. | is the simplest of semiconductor devices |
| B. | has characteristics that closely match those of a simple switch |
| C. | is a two-terminal device |
| D. | All of the above |
| Answer» E. | |
| 87. |
One eV is equal to ________ J. |
| A. | 6.02 × 10 23 |
| B. | 1.6 × 10 –19 |
| C. | 6.25 × 10 18 |
| D. | 1.66 × 10 –24 |
| Answer» C. 6.25 × 10 18 | |