MCQOPTIONS
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MCQOPTIONS
This section includes 87 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The reverse-bias current ________ with the increase of temperature. |
| A. | decreases |
| B. | increases |
| C. | remains the same |
| D. | None of the above |
| Answer» C. remains the same | |
| 2. |
Generally the value of ac resistance is ________ the value of dc resistance at the same operating point. |
| A. | smaller than |
| B. | larger than |
| C. | the same as |
| D. | unrelated to |
| Answer» B. larger than | |
| 3. |
The ac resistance of a diode is the ________ of the characteristic curve at the Q-point of operation. |
| A. | reciprocal of the slope |
| B. | slope |
| C. | midpoint |
| D. | average value |
| Answer» B. slope | |
| 4. |
The reverse recovery time of most commercial switching diodes is in the range of ________. |
| A. | picoseconds |
| B. | a few nanoseconds |
| C. | several microseconds |
| D. | milliseconds |
| Answer» C. several microseconds | |
| 5. |
The temperature coefficient can be ________ for different Zener levels. |
| A. | positive |
| B. | negative |
| C. | zero |
| D. | All of the above |
| Answer» E. | |
| 6. |
The intensity of LED is greatest at ________ degrees and the least at ________ degrees. |
| A. | 0, 90 |
| B. | 45, 90 |
| C. | 0, 45 |
| D. | 90, 180 |
| Answer» B. 45, 90 | |
| 7. |
The heavier the current in a Zener diode in reverse bias, ________ dynamic resistance value. |
| A. | the more the |
| B. | the less the |
| C. | there is substantially more |
| D. | there is no change in the |
| Answer» C. there is substantially more | |
| 8. |
The test current in a Zener diode IZT is the current defined by the ________ power level. |
| A. | 0.25 |
| B. | 0.5 |
| C. | 0.75 |
| D. | 1 |
| Answer» B. 0.5 | |
| 9. |
Varying the ________ can control the location of the Zener region. |
| A. | forward current |
| B. | doping levels |
| C. | forward voltage |
| D. | dc resistance |
| Answer» C. forward voltage | |
| 10. |
The ________ the current through a diode, the ________ the dc resistance level. |
| A. | higher, lower |
| B. | lower, lower |
| C. | lower, higher |
| D. | higher, higher |
| Answer» D. higher, higher | |
| 11. |
The reverse saturation current Is will just ________ in magnitude for every 10° C increase in temperature. |
| A. | double |
| B. | remain the same |
| C. | halve |
| D. | triple |
| Answer» B. remain the same | |
| 12. |
Diodes are connected ________ to increase the current-carrying capacity. |
| A. | in series |
| B. | in parallel |
| C. | in parallel-series |
| D. | None of the above |
| Answer» C. in parallel-series | |
| 13. |
The ideal diode is a(n) ________ circuit in the region of nonconduction. |
| A. | open |
| B. | short |
| Answer» B. short | |
| 14. |
The potential at which the characteristics curve vertical rise occurs is commonly referred to as the ________. |
| A. | offset |
| B. | threshold |
| C. | firing potential |
| D. | All of the above |
| Answer» E. | |
| 15. |
The forward characteristics curve of a diode grows in ________ form. |
| A. | linear |
| B. | exponential |
| C. | logarithmic |
| D. | sinusoidal |
| Answer» C. logarithmic | |
| 16. |
The depletion width ________ in the forward bias, which results in having a majority flow across the junction. |
| A. | widens |
| B. | remains unchanged |
| C. | shrinks |
| D. | widens and shrinks alternatively |
| Answer» D. widens and shrinks alternatively | |
| 17. |
The reverse-saturation current level is typically measured in ________. |
| A. | pA |
| B. | A |
| C. | mA |
| D. | A |
| Answer» C. mA | |
| 18. |
The diffused impurities with ________ valence electrons are called acceptor atoms. |
| A. | 0 |
| B. | 3 |
| C. | 4 |
| D. | 5 |
| Answer» C. 4 | |
| 19. |
In n-type material the ________ is called the majority carrier. |
| A. | electron |
| B. | hole |
| C. | proton |
| D. | neutron |
| Answer» B. hole | |
| 20. |
Introducing those impurity elements that have ________ valence electrons creates the n-type material. |
| A. | 0 |
| B. | 3 |
| C. | 4 |
| D. | 5 |
| Answer» E. | |
| 21. |
Any electron that has left its parent atom has ________ energy state relative to any electron in the atomic structure. |
| A. | the same |
| B. | a lower |
| C. | a higher |
| D. | an undefined |
| Answer» D. an undefined | |
| 22. |
Ge and Si have a(n) ________ coefficient in forward bias. |
| A. | positive temperature |
| B. | negative temperature |
| C. | absolute temperature |
| D. | temperature free |
| Answer» C. absolute temperature | |
| 23. |
An increase in temperature of a semiconductor can result in a ________ in the number of free electrons in the material. |
| A. | substantial increase |
| B. | substantial decrease |
| C. | slight decrease |
| D. | no change |
| Answer» B. substantial decrease | |
| 24. |
In the atomic lattice the ________ and ________ form the nucleus. |
| A. | electrons, neutrons |
| B. | electrons, protons |
| C. | neutrons, protons |
| D. | None of the above |
| Answer» D. None of the above | |
| 25. |
The term ________ is often used when comparing the resistance level of materials. |
| A. | permittivity |
| B. | inductivity |
| C. | conductivity |
| D. | resistivity |
| Answer» E. | |
| 26. |
A(n) ________ is the simplest of semiconductor devices. |
| A. | diode |
| B. | transistor |
| C. | operational amplifier |
| D. | SCR |
| Answer» B. transistor | |
| 27. |
What is the value of the transition capacitance for a silicon diode when VD = 0? (Choose the best answer.) |
| A. | 1 pF |
| B. | 3 pF |
| C. | 5 pF |
| D. | 10 pF |
| Answer» C. 5 pF | |
| 28. |
Calculate the power dissipation of a diode having ID = 40 mA. |
| A. | 28 mW |
| B. | 28 W |
| C. | 280 mW |
| D. | Undefined |
| Answer» B. 28 W | |
| 29. |
Determining rd to a high degree of accuracy from a characteristic curve is very accurate. |
| A. | True |
| B. | False |
| Answer» C. | |
| 30. |
Calculate ID if RD = 30 and VD = 0.84 V. |
| A. | 28 mA |
| B. | 0.028 mA |
| C. | 2.8 A |
| D. | 280 A |
| Answer» B. 0.028 mA | |
| 31. |
Calculate static resistance RD of a diode having ID = 30 mA and VD = 0.75 V. |
| A. | 25 |
| B. | 40 |
| C. | 0.04 |
| D. | 0.025 |
| Answer» B. 40 | |
| 32. |
It is not uncommon for a germanium diode with an Is in the order of 1–2 A at 25°C to have leakage current of 0.1 mA at a temperature of 100°C. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 33. |
What unit is used to represent the level of a diode forward current IF? |
| A. | pA |
| B. | nA |
| C. | A |
| D. | mA |
| Answer» E. | |
| 34. |
The ac line current at slipping in a 6 phase, 6 ring rotary converter having 100% efficiency and unity power factor is........... times the dc current |
| A. | 1.414 |
| B. | 0.236 |
| C. | 0.943. |
| D. | 0.472 |
| Answer» E. | |
| 35. |
The collector current in a bipolar junction transistor is 2 mA when the base current is 0.1 mA. Which one of the following gives the value of common-emitter current gain? |
| A. | 2.1 |
| B. | 1.9 |
| C. | None of above |
| D. | 20 |
| Answer» E. | |
| 36. |
A half-wave rectifier circuit with a capacitive filter is connected to a 200 volts, 50 Hz ac line. The output voltage across the capacitor should be approximately |
| A. | 280 volts |
| B. | 300 volts |
| C. | 80 volts. |
| D. | 180 volts |
| Answer» B. 300 volts | |
| 37. |
For single phase supply frequency of 50 Hz, ripple frequency in full wave rectifier is |
| A. | 50 |
| B. | 25 |
| C. | 200 |
| D. | 100 |
| Answer» E. | |
| 38. |
When voltage applied to a diode is more than PIV, it is likely to result in |
| A. | Poor regulation |
| B. | More distortion on output side |
| C. | Breakdown at the junction. |
| D. | Conduction in both direction |
| Answer» D. Conduction in both direction | |
| 39. |
How many electrons are present in the outer valence shell of a silicon atom? |
| A. | 2 |
| B. | 1 |
| C. | None of above |
| D. | 4 |
| Answer» E. | |
| 40. |
A rectifier is a |
| A. | Linear device |
| B. | Bilateral device |
| C. | Passive device. |
| D. | Non-linear device |
| Answer» C. Passive device. | |
| 41. |
The ripple factor of a full-wave rectifier circuit compared to that of a half wave rectifier circuit without filter is |
| A. | less than half that for a half-wave rectifier circuit |
| B. | half of that for a half 'wave rectifier |
| C. | none of the above |
| D. | equal to that of a half wave rectifier. |
| Answer» B. half of that for a half 'wave rectifier | |
| 42. |
The three terminals of a bipolar junction transistor are known as: |
| A. | emitter, gate, collector |
| B. | source, gate, collector |
| C. | None of above |
| D. | emitter, base, collector |
| Answer» E. | |
| 43. |
A thyratron is a |
| A. | gas-filled diode |
| B. | vacuum tube with four electrodes |
| C. | none of the above. |
| D. | gas-filled triode |
| Answer» E. | |
| 44. |
The advantage of motor generator set is |
| A. | dc output can be controlled by adjusting shunt field regulator |
| B. | dc output voltage is practically constants |
| C. | all of the above. |
| D. | unit is self-starting |
| Answer» D. unit is self-starting | |
| 45. |
PIV of a diode is usually |
| A. | Same as dc voltage |
| B. | Half the dc voltage |
| C. | Hundred times the dc output voltage. |
| D. | Twice the dc output voltage |
| Answer» E. | |
| 46. |
Calculate the temperature coefficient in %/° C of a 10-V nominal Zener diode at 25° C if the nominal voltage is 10.2 V at 100° C. |
| A. | 0.0321 |
| B. | 0.0267 |
| C. | 0.0238 |
| D. | 0.0251 |
| Answer» C. 0.0238 | |
| 47. |
Which of the following is known as metal rectifier |
| A. | Copper oxide rectifier |
| B. | Selenium disc rectifier |
| C. | All of the above. |
| D. | Gas tube diode |
| Answer» B. Selenium disc rectifier | |
| 48. |
In its pure state, silicon has the properties of: |
| A. | an insulator |
| B. | a conductor |
| C. | None of above |
| D. | a semiconductor |
| Answer» B. a conductor | |
| 49. |
Peak inverse voltage for a diode is the |
| A. | maximum voltage that can be applied across the diode in the conducting direction |
| B. | voltage corresponding to rated maximum voltage |
| C. | none of the above. |
| D. | maximum voltage that can be applied across the diode in the non-conducting direction |
| Answer» E. | |
| 50. |
A mercury vapor discharge tube used for domestic lighting |
| A. | has one filament |
| B. | does not have a filament |
| C. | has two main and one auxiliary filament. |
| D. | has two filaments |
| Answer» E. | |