MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
THE_PEAK_INVERSE_CURRENT_IP_FOR_A_POWER_DIODE_IS_GIVEN_BY_THE_EXPRESSION?$ |
| A. | I<sub>P</sub>=t + di/dt |
| B. | I<sub>P</sub>=t * log ‚Å°i |
| C. | I<sub>P</sub>=t * di/dt |
| D. | I<sub>P</sub>=t * ‚à´ t*i dt |
| Answer» D. I<sub>P</sub>=t * ‚Äö√Ñ√∂‚àö‚Ƭ¨¬• t*i dt | |
| 2. |
A_power_diode_with_small_softness_factor_(S-factor)_has$ |
| A. | small oscillatory over voltages |
| B. | large oscillatory over voltages |
| C. | large peak reverse current |
| D. | small peak reverse current |
| Answer» C. large peak reverse current | |
| 3. |
In case of an ideal power diode, the leakage current flows fro? |
| A. | anode to cathode |
| B. | cathode to anode |
| C. | in both the directions |
| D. | leakage current does not flow |
| Answer» E. | |
| 4. |
A diode is said to be forward biased when the |
| A. | cathode is positive with respect to the anode |
| B. | anode is positive with respect to the cathode |
| C. | anode is negative with respect to the anode |
| D. | both cathode & anode are positive |
| Answer» C. anode is negative with respect to the anode | |
| 5. |
A diode is said to be reversed biased when the |
| A. | cathode is positive with respect to the anode |
| B. | anode is positive with respect to the cathode |
| C. | cathode is negative with respect to the anode |
| D. | both cathode & anode are negative |
| Answer» B. anode is positive with respect to the cathode | |
| 6. |
Which of the following is true in case of a power diode with R load? |
| A. | I grows almost linearly with V |
| B. | I decays almost linearly with V |
| C. | I is independent of V |
| D. | I initial grows than decays |
| Answer» B. I decays almost linearly with V | |
| 7. |
The V-I Characteristics of the diode lie in the |
| A. | 1st & 2nd quadrant |
| B. | 1st & 3rd quadrant |
| C. | 1st & 4th quadrant |
| D. | Only in the 1st quadrant |
| Answer» C. 1st & 4th quadrant | |
| 8. |
Power diode is __________ |
| A. | a three terminal semiconductor device |
| B. | a two terminal semiconductor device |
| C. | a four terminal semiconductor device |
| D. | a three terminal analog device |
| Answer» C. a four terminal semiconductor device | |
| 9. |
To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________ |
| A. | a lightly doped n layer is grown between the two p & n layers |
| B. | a heavily doped n layer is grown between the two p & n layers |
| C. | a lightly doped p layer is grown between the two p & n layers |
| D. | a heavily doped p layer is grown between the two p & n layers |
| Answer» B. a heavily doped n layer is grown between the two p & n layers | |
| 10. |
An ideal power diode must have |
| A. | low forward current carrying capacity |
| B. | large reverse breakdown voltage |
| C. | high ohmic junction resistance |
| D. | high reverse recovery time |
| Answer» C. high ohmic junction resistance | |