1.

To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________

A. a lightly doped n layer is grown between the two p & n layers
B. a heavily doped n layer is grown between the two p & n layers
C. a lightly doped p layer is grown between the two p & n layers
D. a heavily doped p layer is grown between the two p & n layers
Answer» B. a heavily doped n layer is grown between the two p & n layers


Discussion

No Comment Found