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1. |
To make a signal diode suitable for high current & high voltage carrying applications with minimum losses, ________ |
A. | a lightly doped n layer is grown between the two p & n layers |
B. | a heavily doped n layer is grown between the two p & n layers |
C. | a lightly doped p layer is grown between the two p & n layers |
D. | a heavily doped p layer is grown between the two p & n layers |
Answer» B. a heavily doped n layer is grown between the two p & n layers | |