For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.

gm= 0.24mA/V, ro= 240 kΩ, gmb = 0.024 mA/V

gm= 0.24mA/V, ro= 120 kΩ, gmb = 0.048 mA/V

gm= 0.24mA/V, ro=240 kΩ, gmb = 0.048 mA/V

gm= 0.12mA/V, ro= 240 kΩ, gmb = 0.048 mA/V

For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.

gm= 0.42mA/V, ro= 160 kΩ, gmb = 0.084 mA/V

gm= 0.21mA/V, ro= 160 kΩ, gmb= 0.042 mA/V

gm= 0.42mA/V, ro= 80 kΩ, gmb = 0.042 mA/V

gm= 0.24mA/V, ro= 80 kΩ, gmb = 0.084 mA/V

0.34 mA and 0.35 V respectively

0.34 mA and 0.69 V respectively

0.034 mA and 0.35 V respectively

0.034 mA and 0.69 V respectively

ID = 1mA and Increment = 0.21 mA

ID = 1mA and Increment = 0.42 mA

ID = 2mA and Increment = 0.21 mA

ID = 2mA and Increment = 0.42 mA

1.	For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and \|VA\| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and \|VSB\| = 1V.
A.	gm= 0.24mA/V, ro= 240 kΩ, gmb = 0.024 mA/V
B.	gm= 0.24mA/V, ro= 120 kΩ, gmb = 0.048 mA/V
C.	gm= 0.24mA/V, ro=240 kΩ, gmb = 0.048 mA/V
D.	gm= 0.12mA/V, ro= 240 kΩ, gmb = 0.048 mA/V
Answer» D. gm= 0.12mA/V, ro= 240 kΩ, gmb = 0.048 mA/V

2.	For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and \|VA\| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and \|VSB\| = 1V.
A.	gm= 0.42mA/V, ro= 160 kΩ, gmb = 0.084 mA/V
B.	gm= 0.21mA/V, ro= 160 kΩ, gmb= 0.042 mA/V
C.	gm= 0.42mA/V, ro= 80 kΩ, gmb = 0.042 mA/V
D.	gm= 0.24mA/V, ro= 80 kΩ, gmb = 0.084 mA/V
Answer» B. gm= 0.21mA/V, ro= 160 kΩ, gmb= 0.042 mA/V

3.	An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-kΩ load that can be used as a drain resistor. What W/L ratio is required if μnCox = 200 μA/V2?
A.	1.23
B.	1.23
C.	1.43
D.	1.53
Answer» D. 1.53

4.	An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-kΩ load that can be used as a drain resistor. Using a dc supply of 3 V, what values of ID and VOV would you choose?
A.	0.34 mA and 0.35 V respectively
B.	0.34 mA and 0.69 V respectively
C.	0.034 mA and 0.35 V respectively
D.	0.034 mA and 0.69 V respectively
Answer» E.

5.	An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-kΩ load that can be used as a drain resistor. If a gain of at least 5 V/V is needed, what value of gm is required?
A.	0.1 mA/V
B.	0.2 mA/V
C.	0.4 mA/V
D.	0.8 mA/V
Answer» B. 0.2 mA/V

6.	If in a particular application Vgs is 10 mV, find the minimum overdrive voltage at which the transistor should be operated so that the second-harmonic distortion is kept to less than 1%.
A.	1V
B.	0.75V
C.	0.5V
D.	0.25V
Answer» E.

7.	We know ID =1/2 kn (VGS + vgs – Vt)2. Let the signal vgs be a sine wave with amplitude Vgs, and substitute vgs = Vgs sin ω t in Eq.(5.43). Using the trigonometric identity show that the ratio of the signal at frequency 2ω to that at frequency ω , expressed as a percentage (known as the second-harmonic distortion) is
A.	Vgs/Vov x 100%
B.	1/2Vgs/Vov x 100%
C.	1/4Vgs/Vov x 100%
D.	1/8Vgs/Vov x 100%
Answer» D. 1/8Vgs/Vov x 100%

8.	Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.
A.	ID = 1mA and Increment = 0.21 mA
B.	ID = 1mA and Increment = 0.42 mA
C.	ID = 2mA and Increment = 0.21 mA
D.	ID = 2mA and Increment = 0.42 mA
Answer» B. ID = 1mA and Increment = 0.42 mA

9.	An NMOS technology has μnCox = 50 μA/V2 and Vt = 0.7 V. For a transistor with L = 1μm, find the value of W that results in gm 1mA/V at ID = 0.5 mA.
A.	10 μm
B.	20 μm
C.	30 μm
D.	40 μm
Answer» C. 30 μm