For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.

gm= 0.42mA/V, ro= 160 kΩ, gmb = 0.084 mA/V

gm= 0.21mA/V, ro= 160 kΩ, gmb= 0.042 mA/V

gm= 0.42mA/V, ro= 80 kΩ, gmb = 0.042 mA/V

gm= 0.24mA/V, ro= 80 kΩ, gmb = 0.084 mA/V

For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μ

1.	For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and \|VA\| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and \|VSB\| = 1V.
A.	gm= 0.42mA/V, ro= 160 kΩ, gmb = 0.084 mA/V
B.	gm= 0.21mA/V, ro= 160 kΩ, gmb= 0.042 mA/V
C.	gm= 0.42mA/V, ro= 80 kΩ, gmb = 0.042 mA/V
D.	gm= 0.24mA/V, ro= 80 kΩ, gmb = 0.084 mA/V
Answer» B.

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