20 + Mcqs in Integrated Optics Photonic Technologies Page 1 McqOptions

1.	How many layers are possessed by waveguide structures of silica-on-silicon(SOS)?
A.	Two
B.	Three
C.	Four
D.	One
Answer» C. Four

Discussion

2.	The use of light as an electromagnetic wave of high frequency provides high speed operation around ____________ times the conceivable employing electronic circuits.
A.	108Hz
B.	105Hz
C.	106Hz
D.	104Hz
Answer» E.

Discussion

3.	Electronic circuits have a practical limitation on speed of operation at a frequency of around _________
A.	1010Hz
B.	1012Hz
C.	1014Hz
D.	1011Hz
Answer» B. 1012Hz

Discussion

4.	Who invented the IO technology?
A.	Albert Einstein
B.	Anderson
C.	M.S Clarke
D.	Robert
Answer» C. M.S Clarke

Discussion

5.	Using SOI integration technique __________ components can be coupled to IP devices.
A.	Passive
B.	Layered
C.	Demounted
D.	Active
Answer» E.

Discussion

6.	Side or edge-emitting or conducting optical devices cannot be integrated on same substrate.
A.	True
B.	False
Answer» C.

Discussion

7.	Integrated technology for optical devices are developed within optical fiber communication.
A.	True
B.	False
Answer» B. False

Discussion

8.	WHO_INVENTED_THE_IO_TECHNOLOGY??$
A.	Albert Einstein
B.	Anderson
C.	M.S Clarke
D.	Robert
Answer» C. M.S Clarke

Discussion

9.	The use of light as an electromagnetic wave of high frequency provides high speed operation around ____________ times the conceivable employing electronic circuits.$
A.	10<sup>8</sup>Hz
B.	10<sup>5</sup>Hz
C.	10<sup>6</sup>Hz
D.	10<sup>4</sup>Hz
Answer» E.

Discussion

10.	Electronic_circuits_have_a_practical_limitation_on_speed_of_operation_at_a_frequency_of_around__________$
A.	10<sup>10</sup>Hz
B.	10<sup>12</sup>Hz
C.	10<sup>14</sup>Hz
D.	10<sup>11</sup>Hz
Answer» B. 10<sup>12</sup>Hz

Discussion

11.	The ________________ is a versatile solution-based technique for making ceramic and glass materials.
A.	SOL gel process
B.	SSL gel process
C.	SDL gel process
D.	SAML gel process
Answer» B. SSL gel process

Discussion

12.	How_many_layers_are_possessed_by_waveguide_structures_of_silica-on-silicon(SOS)?
A.	Two
B.	Three
C.	Four
D.	One
Answer» C. Four

Discussion

13.	Using SOI integration technique, __________ components can be coupled to IP devices?
A.	Passive
B.	Layered
C.	Demounted
D.	Active
Answer» E.

Discussion

14.	Hybrid ________ integration demands _________ IP circuits to be produced on a single substrate.
A.	IP, single-layered
B.	IO, multilayered
C.	IP, multilayered
D.	IO, multilayered
Answer» D. IO, multilayered

Discussion

15.	Side or edge-emitting or conducting optical devices cannot be integrated on same substrate. State whether the given statement is true or false.
A.	True
B.	False
Answer» C.

Discussion

16.	__________ did not make significant contribution to earlier optical fiber systems.
A.	IO
B.	IP
C.	Wavelength amplifiers
D.	Couplers
Answer» B. IP

Discussion

17.	Thin transparent dielectric layers on planar substrates are used in _________ and ______ devices.
A.	Wavelength converters and amplification devices
B.	IP and IO
C.	IP and wavelength converters
D.	IO and amplification devices
Answer» C. IP and wavelength converters

Discussion

18.	_________ is a further enhancement of ________
A.	IP, IO
B.	IO, IP
C.	IO, wavelength converters
D.	IP, wavelength converters
Answer» B. IO, IP

Discussion

19.	When both active and passive devices are integrated on a single chip, in multilayered form, then these devices are known as _____________
A.	IP devices
B.	IO devices
C.	Wavelength converters
D.	Optical parametric amplifiers
Answer» B. IO devices

Discussion

20.	Integrated technology for optical devices are developed within optical fiber communication. State whether the given statement is true or false.
A.	True
B.	False
Answer» B. False

Discussion

Explore topic-wise MCQs in Optical Communication.

How many layers are possessed by waveguide structures of silica-on-silicon(SOS)?

The use of light as an electromagnetic wave of high frequency provides high speed operation around ____________ times the conceivable employing electronic circuits.

Electronic circuits have a practical limitation on speed of operation at a frequency of around _________

Who invented the IO technology?

Using SOI integration technique __________ components can be coupled to IP devices.

Side or edge-emitting or conducting optical devices cannot be integrated on same substrate.

Integrated technology for optical devices are developed within optical fiber communication.

WHO_INVENTED_THE_IO_TECHNOLOGY??$

The use of light as an electromagnetic wave of high frequency provides high speed operation around ____________ times the conceivable employing electronic circuits.$

Electronic_circuits_have_a_practical_limitation_on_speed_of_operation_at_a_frequency_of_around__________$

The ________________ is a versatile solution-based technique for making ceramic and glass materials.

How_many_layers_are_possessed_by_waveguide_structures_of_silica-on-silicon(SOS)?

Using SOI integration technique, __________ components can be coupled to IP devices?

Hybrid integration demands _ IP circuits to be produced on a single substrate.

Side or edge-emitting or conducting optical devices cannot be integrated on same substrate. State whether the given statement is true or false.

__________ did not make significant contribution to earlier optical fiber systems.

Thin transparent dielectric layers on planar substrates are used in ___ and devices.

_ is a further enhancement of

When both active and passive devices are integrated on a single chip, in multilayered form, then these devices are known as _____________

Integrated technology for optical devices are developed within optical fiber communication. State whether the given statement is true or false.

Explore topic-wise MCQs in Optical Communication.

How many layers are possessed by waveguide structures of silica-on-silicon(SOS)?

The use of light as an electromagnetic wave of high frequency provides high speed operation around ____________ times the conceivable employing electronic circuits.

Electronic circuits have a practical limitation on speed of operation at a frequency of around _________

Who invented the IO technology?

Using SOI integration technique __________ components can be coupled to IP devices.

Side or edge-emitting or conducting optical devices cannot be integrated on same substrate.

Integrated technology for optical devices are developed within optical fiber communication.

WHO_INVENTED_THE_IO_TECHNOLOGY??$

The use of light as an electromagnetic wave of high frequency provides high speed operation around ____________ times the conceivable employing electronic circuits.$

Electronic_circuits_have_a_practical_limitation_on_speed_of_operation_at_a_frequency_of_around__________$

The ________________ is a versatile solution-based technique for making ceramic and glass materials.

How_many_layers_are_possessed_by_waveguide_structures_of_silica-on-silicon(SOS)?

Using SOI integration technique, __________ components can be coupled to IP devices?

Hybrid ________ integration demands _________ IP circuits to be produced on a single substrate.

Side or edge-emitting or conducting optical devices cannot be integrated on same substrate. State whether the given statement is true or false.

__________ did not make significant contribution to earlier optical fiber systems.

Thin transparent dielectric layers on planar substrates are used in _________ and ______ devices.

_________ is a further enhancement of ________

When both active and passive devices are integrated on a single chip, in multilayered form, then these devices are known as _____________

Integrated technology for optical devices are developed within optical fiber communication. State whether the given statement is true or false.

Hybrid integration demands _ IP circuits to be produced on a single substrate.

Thin transparent dielectric layers on planar substrates are used in ___ and devices.

_ is a further enhancement of