MCQOPTIONS
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MCQOPTIONS
This section includes 30 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The behavior of laser occurring when current is increased above threshold particularly is? |
| A. | Mode hopping |
| B. | Auger recombination |
| C. | Frequency chirping |
| D. | Noise |
| Answer» B. Auger recombination | |
| 2. |
Reduction in the number of modes in multimode fiber increases the mode partition noise. |
| A. | False |
| B. | True |
| Answer» B. True | |
| 3. |
In multimode lasers the optical feedback from unnecessary external reflections affecting stability of frequency and intensity is? |
| A. | Remains unaffected |
| B. | Increased gradually |
| C. | Reduced |
| D. | Gets totally vanished |
| Answer» D. Gets totally vanished | |
| 4. |
Intensity of output from semiconductor injection lasers leading to optical intensity noise is due to __________ |
| A. | Fluctuations in amplitude |
| B. | Mode hopping |
| C. | Carrier leakage effects |
| D. | Frequency Chirping |
| Answer» B. Mode hopping | |
| 5. |
A particular characteristic or parameter that occurs during analog transmission of injection lasers is? |
| A. | Noise |
| B. | Mode hopping |
| C. | Carrier leakage effects |
| D. | Frequency Chirping |
| Answer» B. Mode hopping | |
| 6. |
Dynamic line-width broadening under the direct modulation of injection current is known as __________ |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage effects |
| D. | Frequency Chirping |
| Answer» E. | |
| 7. |
Reducing delay time and ____________ are of high importance for lasers. |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage effects |
| D. | Relaxation oscillations |
| Answer» E. | |
| 8. |
When a current pulse reaches a laser having parasitic capacitance after the initial delay time, that pulse will __________ |
| A. | Have no effect |
| B. | Will get vanished |
| C. | Becomes narrower |
| D. | Gets broader |
| Answer» E. | |
| 9. |
The phenomenon occurring when the electron and photon population within the structure comes into equilibrium is known as __________ |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage |
| D. | Relaxation oscillations |
| Answer» E. | |
| 10. |
Determine the threshold current density for an AlGaAs injection laser with T0=180k at 30°C. |
| A. | 6.24 |
| B. | 9.06 |
| C. | 3.08 |
| D. | 5.09 |
| Answer» E. | |
| 11. |
The parameter that prevents carrier from recombination is __________ |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage |
| D. | Low temperature sensitivity |
| Answer» D. Low temperature sensitivity | |
| 12. |
High strain in strained MCQ structure should be incorporated. |
| A. | True |
| B. | False |
| Answer» C. | |
| 13. |
Auger recombination can be reduced by using __________ |
| A. | Strained MQW structure |
| B. | Strained SQW structure |
| C. | Gain-guided strained structure |
| D. | Strained Quantum dots lasers |
| Answer» B. Strained SQW structure | |
| 14. |
The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as __________ |
| A. | Inter-valence bond absorption |
| B. | Auger recombination |
| C. | Carrier leakage effects |
| D. | Exothermic actions |
| Answer» C. Carrier leakage effects | |
| 15. |
The threshold temperature coefficient for InGaAsP devices is in the range of __________ |
| A. | 10-40 K |
| B. | 40-75 K |
| C. | 120-190 K |
| D. | 150-190 K |
| Answer» C. 120-190 K | |
| 16. |
REDUCING_DELAY_TIME_AND______________ARE_OF_HIGH_IMPORTANCE_FOR_LASERS.?$ |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage effects |
| D. | Relaxation oscillations |
| Answer» E. | |
| 17. |
A particular characteristic or parameter that occurs during analog transmission of injection lasers is$ |
| A. | Noise |
| B. | Mode hopping |
| C. | Carrier leakage effects |
| D. | Frequency Chirping |
| Answer» B. Mode hopping | |
| 18. |
Dynamic_line-width_broadening_under_the_direct_modulation_of_injection_current_is_known_as$ |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage effects |
| D. | Frequency Chirping |
| Answer» E. | |
| 19. |
The behavior of laser occurring when current is increased above threshold particularly is |
| A. | Mode hopping |
| B. | Auger recombination |
| C. | Frequency chirping |
| D. | Noise |
| Answer» B. Auger recombination | |
| 20. |
Reduction in the number of modes in multimode fiber increases the mode partition noise. State whether the given statement is true or false. |
| A. | False |
| B. | True |
| Answer» B. True | |
| 21. |
In multimode lasers the optical feedback from unnecessary external reflections affecting stability of frequency and intensity is |
| A. | Remains unaffected |
| B. | Increased gradually |
| C. | Reduced |
| D. | Gets totally vanished |
| Answer» D. Gets totally vanished | |
| 22. |
Intensity of output from semiconductor injection lasers leading to optical intensity noise is due to |
| A. | Fluctuations in amplitude |
| B. | Mode hopping |
| C. | Carrier leakage effects |
| D. | Frequency Chirping |
| Answer» B. Mode hopping | |
| 23. |
When a current pulse reaches a laser having parasitic capacitance after the initial delay time, that pulse wil? |
| A. | Have no effect |
| B. | Will get vanished |
| C. | Becomes narrower |
| D. | Gets broader |
| Answer» E. | |
| 24. |
The phenomenon occurring when the electron and photon population within the structure comes into equilibrium is known as |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage |
| D. | Relaxation oscillations |
| Answer» E. | |
| 25. |
Determine the threshold current density for an AlGaAs injection laser with T0=180k at 30°C.$ |
| A. | 6.24 |
| B. | 9.06 |
| C. | 3.08 |
| D. | 5.09 |
| Answer» E. | |
| 26. |
The parameter that prevents carrier from recombination is |
| A. | Auger recombination |
| B. | Inter-valence band absorption |
| C. | Carrier leakage |
| D. | Low temperature sensitivity |
| Answer» D. Low temperature sensitivity | |
| 27. |
High strain in strained MCQ structure should be incorporated. State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» C. | |
| 28. |
Auger recombination can be reduced by using |
| A. | Strained MQW structure. |
| B. | Strained SQW structure. |
| C. | Gain-guided strained structure. |
| D. | Strained Quantum dots lasers. |
| Answer» B. Strained SQW structure. | |
| 29. |
The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as |
| A. | Inter-valence bond absorption |
| B. | Auger recombination |
| C. | Carrier leakage effects |
| D. | Exothermic actions |
| Answer» C. Carrier leakage effects | |
| 30. |
The threshold temperature coefficient for InGaAsP devices is in the range of |
| A. | 10-40 K |
| B. | 40-75 K |
| C. | 120-190 K |
| D. | 150-190 K |
| Answer» C. 120-190 K | |