MCQOPTIONS
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MCQOPTIONS
This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: |
| A. | 10.1 % |
| B. | 10.21 % |
| C. | 12 % |
| D. | 15.2 % |
| Answer» C. 12 % | |
| 2. |
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: |
| A. | 12 GHz |
| B. | 25 GHz |
| C. | 30 GHz |
| D. | 24 GHz |
| Answer» C. 30 GHz | |
| 3. |
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is: |
| A. | 10-11 seconds |
| B. | 2×10-11 seconds |
| C. | 2.5×10-11 seconds |
| D. | none of the mentioned |
| Answer» C. 2.5×10-11 seconds | |
| 4. |
AN_ESSENTIAL_REQUIREMENT_FOR_THE_BARITT_DIODE_IS_THAT_THE_INTERMEDIATE_DRIFT_REGION_BE_COMPLETELY_FILLED_TO_CAUSE_THE_PUNCH_THROUGH_TO_OCCUR.?$ |
| A. | true |
| B. | false |
| Answer» C. | |
| 5. |
If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:$ |
| A. | 3.2 V |
| B. | 6.4 V |
| C. | 2.4 V |
| D. | 6.5 V |
| Answer» C. 2.4 V | |
| 6. |
If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:$# |
| A. | 10.1 % |
| B. | 10.21 % |
| C. | 12 % |
| D. | 15.2 % |
| Answer» C. 12 % | |
| 7. |
IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers? |
| A. | true |
| B. | false |
| Answer» B. false | |
| 8. |
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:# |
| A. | 12 GHz |
| B. | 25 GHz |
| C. | 30 GHz |
| D. | 24 GHz |
| Answer» C. 30 GHz | |
| 9. |
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:$ |
| A. | 10<sup>-11</sup> seconds |
| B. | 2√ó10<sup>-11</sup> seconds |
| C. | 2.5√ó10<sup>-11</sup> seconds |
| D. | none of the mentioned |
| Answer» C. 2.5‚Äö√†√∂‚àö‚â•10<sup>-11</sup> seconds | |
| 10. |
The resonant frequency of an IMPATT diode is given by: |
| A. | V<sub>d</sub>/2l |
| B. | V<sub>d</sub>/l |
| C. | V<sub>d</sub>/2πl |
| D. | Vd<sub>d</sub>/4πl |
| Answer» B. V<sub>d</sub>/l | |
| 11. |
The number of semiconductor layers in IMPATT diode is: |
| A. | two |
| B. | three |
| C. | four |
| D. | none of the mentioned |
| Answer» D. none of the mentioned | |
| 12. |
To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. |
| A. | average current |
| B. | average voltage |
| C. | average bias voltage |
| D. | average resistance |
| Answer» B. average voltage | |
| 13. |
When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: |
| A. | avalanche multiplication |
| B. | break down of depletion region |
| C. | high reverse saturation current |
| D. | none of the mentioned |
| Answer» B. break down of depletion region | |
| 14. |
The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. |
| A. | true |
| B. | false |
| Answer» C. | |