When a reverse bias voltage exceeding the breakdown voltage is applied – McqOptions

MCQOPTIONS

1.	When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:
A.	avalanche multiplication
B.	break down of depletion region
C.	high reverse saturation current
D.	none of the mentioned
Answer» B. break down of depletion region

Discussion

No Comment Found

Related MCQs

If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:
AN_ESSENTIAL_REQUIREMENT_FOR_THE_BARITT_DIODE_IS_THAT_THE_INTERMEDIATE_DRIFT_REGION_BE_COMPLETELY_FILLED_TO_CAUSE_THE_PUNCH_THROUGH_TO_OCCUR.?$
If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:$
If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 ‚âà√≠¬¨¬©, the efficiency of the diode is:$#
IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers?
If the length of the intrinsic region in IMPATT diode is 2 ¬¨¬®¬¨¬µm and the carrier drift velocity are 10<sup>7</sup> cm/s, then the nominal frequency of the diode is:#
If the length of the intrinsic region in IMPATT diode is 2 ¬¨¬®¬¨¬µm and the carrier drift velocity are 10<sup>7</sup> cm/s, then the drift time of the carrier is:$
The resonant frequency of an IMPATT diode is given by: