MCQOPTIONS
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This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
One advantage of voltage-divider bias is that the dependency of drain current, I, on the range of Q points is _________. |
| A. | reduced |
| B. | increased |
| C. | not affected |
| D. | none of the above |
| Answer» B. increased | |
| 2. |
A __________ change in V will produce a __________ change in I. |
| A. | small, large |
| B. | large, small |
| C. | large, large |
| D. | small, small |
| Answer» C. large, large | |
| 3. |
The gate-biased JFET characteristic curve includes I. |
| A. | True |
| B. | False |
| Answer» C. | |
| 4. |
In a voltage-divider JFET circuit, I is a maximum when V = 0 V. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 5. |
The amount of gate voltage needed to turn the JFET completely off is called V. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 6. |
Using voltage-divider biasing, what is the voltage at the gate V? |
| A. | 5.2 V |
| B. | 4.2 V |
| C. | 3.2 V |
| D. | 2.2 V |
| Answer» B. 4.2 V | |
| 7. |
What is the transconductance of an FET when I = 1 mA and V = 1 V? |
| A. | 1 kS |
| B. | 1 mS |
| C. | 1 k |
| D. | 1 m |
| Answer» C. 1 k | |
| 8. |
When testing an n-channel D-MOSFET, resistance G to D = , resistance G to S = , resistance D to SS = and 500 , depending on the polarity of the ohmmeter, and resistance D to S = 500 . What is wrong? |
| A. | short D to S |
| B. | open G to D |
| C. | open D to SS |
| D. | nothing |
| Answer» E. | |
| 9. |
When V = 0 V, a JFET is: |
| A. | saturated |
| B. | an analog device |
| C. | an open switch |
| D. | cut off |
| Answer» B. an analog device | |
| 10. |
With a 30-volt V, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with I = 3 mA? |
| A. | 6 V |
| B. | 10 V |
| C. | 24 V |
| D. | 30 V |
| Answer» B. 10 V | |