MCQOPTIONS
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MCQOPTIONS
This section includes 657 Mcqs, each offering curated multiple-choice questions to sharpen your Testing Subject knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The two important advantages of a JFET are ___________ |
| A. | high input impedance and square-law property |
| B. | inexpensive and high output impedance |
| C. | low input impedance and high output impedance |
| D. | none of the above |
| Answer» B. inexpensive and high output impedance | |
| 2. |
The pinch-off voltage of a JFET is about ___________ |
| A. | 5 V |
| B. | 0.6 V |
| C. | 15 V |
| D. | 25 V |
| Answer» B. 0.6 V | |
| 3. |
In a p-channel JFET, the charge carriers are ___________ |
| A. | electrons |
| B. | holes |
| C. | both electrons and holes |
| D. | none of the above |
| Answer» C. both electrons and holes | |
| 4. |
The transconductance of a JFET ranges from ___________ |
| A. | 100 to 500 mA/V |
| B. | 500 to 1000 mA/V |
| C. | 0.5 to 30 mA/V |
| D. | above 1000 mA/V |
| Answer» D. above 1000 mA/V | |
| 5. |
Which of the following devices has the highest input impedance? |
| A. | JFET |
| B. | MOSFET |
| C. | Crystal diode |
| D. | ordinary transistor |
| Answer» C. Crystal diode | |
| 6. |
___________ has the lowest noise-level |
| A. | triode |
| B. | ordinary trnsistor |
| C. | tetrode |
| D. | JFET |
| Answer» E. | |
| 7. |
A n-channel D-MOSFET with a positive VGS is operating in ___________ |
| A. | the depletion-mode |
| B. | the enhancement-mode |
| C. | cut off |
| D. | saturation |
| Answer» C. cut off | |
| 8. |
When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage |
| A. | decreases |
| B. | increases |
| C. | remains constant |
| D. | none of the above |
| Answer» D. none of the above | |
| 9. |
For VGS = 0 V, the drain current becomes constant when VDS exceeds |
| A. | cut off |
| B. | VDD |
| C. | VP |
| D. | o V |
| Answer» D. o V | |
| 10. |
At cut-off, the JFET channel is ___________ |
| A. | at its widest point |
| B. | completely closed by the depletion region |
| C. | extremely narrow |
| D. | reverse baised |
| Answer» C. extremely narrow | |
| 11. |
The pinch-off voltage in a JFET is analogous to ___________ voltage in a vacuum tube |
| A. | anode |
| B. | cathode |
| C. | grid cut off |
| D. | none of the above |
| Answer» D. none of the above | |
| 12. |
A MOSFET has ___________ terminals |
| A. | two |
| B. | five |
| C. | four |
| D. | three |
| Answer» E. | |
| 13. |
A common base configuration of a pnp transistor is analogous to ___________ of a JFET |
| A. | common source configuration |
| B. | common drain configuration |
| C. | common gate configuration |
| D. | none of the above |
| Answer» D. none of the above | |
| 14. |
A JFET is also called ___________ transistor |
| A. | unipolar |
| B. | bipolar |
| C. | unijunction |
| D. | none of the above |
| Answer» B. bipolar | |
| 15. |
A JFET has ___________ power gain |
| A. | small |
| B. | very high |
| C. | very small |
| D. | none of the above |
| Answer» C. very small | |
| 16. |
A JFET is a ___________ driven device |
| A. | current |
| B. | voltage |
| C. | both current and voltage |
| D. | none of the above |
| Answer» C. both current and voltage | |
| 17. |
The Q of a tuned amplifier is 50. If the resonant frequency for the amplifier is 1000kHZ, then bandwidth is ___________ |
| A. | 10kHz |
| B. | 40 kHz |
| C. | 30 kHz |
| D. | 20 kHz |
| Answer» E. | |
| 18. |
The stabilisation of operating point in potential divider method is provided by ___________ |
| A. | RE consideration |
| B. | RC consideration |
| C. | VCC consideration |
| D. | None of the above |
| Answer» B. RC consideration | |
| 19. |
A class C amplifier always drives ___________ load |
| A. | A pure resistive |
| B. | A pure inductive |
| C. | A pure capacitive |
| D. | A resonant tank |
| Answer» E. | |
| 20. |
In a particular biasing circuit, the value of RE is about |
| A. | 10 kΩ |
| B. | 1 MO |
| C. | 100 kΩ |
| D. | 800 O |
| Answer» E. | |
| 21. |
Thermal runaway occurs when ___________ |
| A. | Collector is reverse biased |
| B. | Transistor is not biased |
| C. | Emitter is forward biased |
| D. | Junction capacitance is high |
| Answer» C. Emitter is forward biased | |
| 22. |
For proper operation of the transistor, its collector should have ___________ |
| A. | Proper forward bias |
| B. | Proper reverse bias |
| C. | Very small size |
| D. | None of the above |
| Answer» C. Very small size | |
| 23. |
The zero signal IC is generally ___________ mA in the initial stages of a transistor amplifier |
| A. | 4 |
| B. | 1 |
| C. | 3 |
| D. | More than 10 |
| Answer» C. 3 | |
| 24. |
In parallel resonance, there is ___________ |
| A. | Both voltage and current amplification |
| B. | Voltage amplifications |
| C. | Current amplification |
| D. | None of the above |
| Answer» D. None of the above | |
| 25. |
In series resonance, there is ___________ |
| A. | Voltage amplification |
| B. | Current amplification |
| C. | Both voltage and current amplification |
| D. | None of the above |
| Answer» B. Current amplification | |
| 26. |
In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage? |
| A. | 7 V |
| B. | 3 V |
| C. | 5 V |
| D. | 8 V |
| Answer» E. | |
| 27. |
The voltage gain of a tuned amplifier is ___________ at resonant frequency |
| A. | Minimum |
| B. | Maximum |
| C. | Half-way between maximum and minimum |
| D. | Zero |
| Answer» C. Half-way between maximum and minimum | |
| 28. |
The disadvantage of voltage divider bias is that it has ___________ |
| A. | High stability factor |
| B. | Low base current |
| C. | Many resistors |
| D. | None of the above |
| Answer» D. None of the above | |
| 29. |
If biasing is not done in an amplifier circuit, it results in ___________ |
| A. | Decrease in the base current |
| B. | Unfaithful amplification |
| C. | Excessive collector bias |
| D. | None of the above |
| Answer» C. Excessive collector bias | |
| 30. |
The collector-base junction in a transistor has ___________ |
| A. | forward bias at all times |
| B. | reverse bias at all times |
| C. | low resistance |
| D. | none of the above |
| Answer» C. low resistance | |
| 31. |
A transistor has ___________ |
| A. | one pn junction |
| B. | two pn junctions |
| C. | three pn junctions |
| D. | four pn junctions |
| Answer» C. three pn junctions | |
| 32. |
As the temperature of a transistor goes up, the base emitter resistance ___________ |
| A. | decreases |
| B. | increases |
| C. | remains the same |
| D. | none of the above |
| Answer» B. increases | |
| 33. |
The source terminal of a JEFT corresponds to ___________ of a vacuum tube |
| A. | plate |
| B. | cathode |
| C. | grid |
| D. | none of the above |
| Answer» C. grid | |
| 34. |
A JFET has three terminals, namely ___________ |
| A. | cathode, anode, grid |
| B. | emitter, base, collector |
| C. | source, gate, drain |
| D. | none of the above |
| Answer» D. none of the above | |
| 35. |
A MOSFET uses the electric field of a ___________ to control the channel current |
| A. | capacitor |
| B. | battery |
| C. | generator |
| D. | none of the above |
| Answer» B. battery | |
| 36. |
The input impedance of a JFET is ___________ that of an ordinary transistor |
| A. | equal to |
| B. | less than |
| C. | more than |
| D. | none of the above |
| Answer» D. none of the above | |
| 37. |
The input control parameter of a JFET is ___________ |
| A. | gate voltage |
| B. | source voltage |
| C. | drain voltage |
| D. | gate current |
| Answer» B. source voltage | |
| 38. |
A tuned amplifier uses ___________ load |
| A. | Resistive |
| B. | Capacitive |
| C. | LC tank |
| D. | Inductive |
| Answer» D. Inductive | |
| 39. |
For frequencies below the resonant frequency , a parallel LC circuit behaves as a ___________ load |
| A. | Inductive |
| B. | Resistive |
| C. | Capacitive |
| D. | None of the above |
| Answer» B. Resistive | |
| 40. |
For frequencies above the resonant frequency , a series LC circuit behaves as a ___________ load |
| A. | Resistive |
| B. | Inductive |
| C. | Capacitive |
| D. | None of the above |
| Answer» C. Capacitive | |
| 41. |
For frequencies below resonant frequency, a series LC circuit behaves as a ___________ load |
| A. | Resistive |
| B. | Capacitive |
| C. | Inductive |
| D. | None of the above |
| Answer» C. Inductive | |
| 42. |
For frequencies above the resonant frequency, a parallel LC circuit behaves as a ___________ load |
| A. | Capacitive |
| B. | Resistive |
| C. | Inductive |
| D. | None of the above |
| Answer» B. Resistive | |
| 43. |
At series or parallel resonance, the circuit behaves as a ___________ load |
| A. | Capacitive |
| B. | Resistive |
| C. | Inductive |
| D. | None of the above |
| Answer» C. Inductive | |
| 44. |
At parallel resonance, the phase angle between the applied voltage and circuit current is ___________ |
| A. | 90° |
| B. | 180° |
| C. | 0° |
| D. | None of the above |
| Answer» D. None of the above | |
| 45. |
At series resonance, the net reactive component of circuit current is ___________ |
| A. | Zero |
| B. | Inductive |
| C. | Capacitive |
| D. | None of the above |
| Answer» B. Inductive | |
| 46. |
At parallel resonance, the net reactive component circuit current is ___________ |
| A. | Capacitive |
| B. | Zero |
| C. | Inductive |
| D. | None of the above |
| Answer» C. Inductive | |
| 47. |
At parallel resonance, the line current is ___________ |
| A. | Minimum |
| B. | Maximum |
| C. | Quite large |
| D. | None of the above |
| Answer» B. Maximum | |
| 48. |
At series resonance, the phase angle between applied voltage and circuit is ___________ |
| A. | 90° |
| B. | 180° |
| C. | 0° |
| D. | None of the above |
| Answer» D. None of the above | |
| 49. |
For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor |
| A. | Not fall below 1 V |
| B. | Be zero |
| C. | Be 0.2 V |
| D. | None of the above |
| Answer» B. Be zero | |
| 50. |
The point of intersection of d.c. and a.c. load lines represents ___________ |
| A. | Operating point |
| B. | Current gain |
| C. | Voltage gain |
| D. | None of the above |
| Answer» B. Current gain | |