MCQOPTIONS
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MCQOPTIONS
This section includes 657 Mcqs, each offering curated multiple-choice questions to sharpen your Testing Subject knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In parallel resonance, the circuit impedance is ___________ |
| A. | C/LR |
| B. | R/LC |
| C. | CR/L |
| D. | L/CR |
| Answer» E. | |
| 2. |
In a parallel LC circuit, if the signal frequency is decreased below the resonant frequency, then ___________ |
| A. | XL decreases and XC increases |
| B. | XL increases and XC decreases |
| C. | Line current becomes minimum |
| D. | None of the above |
| Answer» B. XL increases and XC decreases | |
| 3. |
In the above question, what are the values of cut-off frequencies? |
| A. | 140 kHz , 60 kHz |
| B. | 1020 kHz , 980 kHz |
| C. | 1030 kHz , 970 kHz |
| D. | None of the above |
| Answer» C. 1030 kHz , 970 kHz | |
| 4. |
The arrow in the symbol of a transistor indicates the direction of ___________ |
| A. | electron current in the emitter |
| B. | electron current in the collector |
| C. | hole current in the emitter |
| D. | donor ion current |
| Answer» D. donor ion current | |
| 5. |
In the double tuned circuit, if the mutual inductance between the two tuned circuits is decreased, the level of resonance curve ___________ |
| A. | Remains the same |
| B. | Is lowered |
| C. | Is raised |
| D. | None of the above |
| Answer» D. None of the above | |
| 6. |
The leakage current in CE arrangement is ___________ that in CB arrangement |
| A. | more than |
| B. | less than |
| C. | the same as |
| D. | none of the above |
| Answer» B. less than | |
| 7. |
In a transistor ___________ |
| A. | IC = IE + IB |
| B. | IB = IC + IE |
| C. | IE = IC - IB |
| D. | IE = IC + IB |
| Answer» E. | |
| 8. |
The input impedance of a transistor connected in ___________ arrangement is the highest |
| A. | common emitter |
| B. | common collector |
| C. | common base |
| D. | none of the above |
| Answer» C. common base | |
| 9. |
The voltage gain of a transistor connected in common collector arrangement is ___________ |
| A. | equal to 1 |
| B. | more than 10 |
| C. | more than 100 |
| D. | less than 1 |
| Answer» E. | |
| 10. |
The phase difference between the input and output voltages in a common base arrangement is ___________ |
| A. | 180° |
| B. | 90° |
| C. | 270° |
| D. | 0° |
| Answer» E. | |
| 11. |
Frequencies above ___________ kHz are called radio frequencies |
| A. | 2 |
| B. | 10 |
| C. | 50 |
| D. | 200 |
| Answer» E. | |
| 12. |
If the temperature increases, the value of VCE ___________ |
| A. | Remains the same |
| B. | Is increased |
| C. | Is decreased |
| D. | None of the above |
| Answer» D. None of the above | |
| 13. |
If Q of an LC circuit increases, then bandwidth ___________ |
| A. | Increases |
| B. | Decreases |
| C. | Remains the same |
| D. | Insufficient data |
| Answer» C. Remains the same | |
| 14. |
The relation between ß and a is ___________ |
| A. | ß = 1 / (1 – a ) |
| B. | ß = (1 – a ) / a |
| C. | ß = a / (1 – a ) |
| D. | ß = a / (1 + a ) |
| Answer» D. ß = a / (1 + a ) | |
| 15. |
At series or parallel resonance, the circuit power factor is ___________ |
| A. | 0% |
| B. | 5% |
| C. | 10% |
| D. | 8% |
| Answer» D. 8% | |
| 16. |
An ideal value of stability factor is ___________ |
| A. | 100 |
| B. | 200 |
| C. | More than 200 |
| D. | 1 |
| Answer» E. | |
| 17. |
For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor |
| A. | Be zero |
| B. | Be 0.01 V |
| C. | Not fall below 0.7 V |
| D. | Be between 0 V and 0.1 V |
| Answer» D. Be between 0 V and 0.1 V | |
| 18. |
IC = ß IB + ___________ |
| A. | ICBO |
| B. | IC |
| C. | ICEO |
| D. | aIE |
| Answer» D. aIE | |
| 19. |
A resonant circuit contains ___________ elements |
| A. | R and L only |
| B. | R and C only |
| C. | Only R |
| D. | L and C |
| Answer» E. | |
| 20. |
If a high degree of selectivity is desired, then double-tuned circuit should have ___________ coupling |
| A. | Loose |
| B. | Tight |
| C. | Critical |
| D. | None of the above |
| Answer» B. Tight | |
| 21. |
A tuned amplifier is generally operated in ___________ operation |
| A. | Class A |
| B. | Class C |
| C. | Class B |
| D. | None of the above |
| Answer» C. Class B | |
| 22. |
At series resonance, the circuit offers ___________ impedance |
| A. | Zero |
| B. | Maximum |
| C. | Minimum |
| D. | None of the above |
| Answer» D. None of the above | |
| 23. |
Transistor biasing represents ___________ conditions |
| A. | a.c. |
| B. | d.c. |
| C. | both a.c. and d.c. |
| D. | none of the above |
| Answer» C. both a.c. and d.c. | |
| 24. |
The most commonly used transistor arrangement is ___________ arrangement |
| A. | common emitter |
| B. | common base |
| C. | common collector |
| D. | none of the above |
| Answer» B. common base | |
| 25. |
A tuned amplifier is used in ___________ applications |
| A. | Radio frequency |
| B. | Low frequency |
| C. | Audio frequency |
| D. | None of the above |
| Answer» B. Low frequency | |
| 26. |
Transistor biasing is done to keep ___________ in the circuit |
| A. | Proper direct current |
| B. | Proper alternating current |
| C. | The base current small |
| D. | Collector current small |
| Answer» B. Proper alternating current | |
| 27. |
A transistor is a ___________ operated device |
| A. | current |
| B. | voltage |
| C. | both voltage and current |
| D. | none of the above |
| Answer» B. voltage | |
| 28. |
At series resonance, voltage across L is ___________ voltage across C |
| A. | Equal to but opposite in phase to |
| B. | Equal to but in phase with |
| C. | Greater than but in phase with |
| D. | Less than but in phase with |
| Answer» B. Equal to but in phase with | |
| 29. |
In a transistor, the base current is about ___________ of emitter current |
| A. | 25% |
| B. | 20% |
| C. | 35% |
| D. | 5% |
| Answer» E. | |
| 30. |
IC = [a / (1 - a )] IB + [ / (1 - a )] |
| A. | ICBO |
| B. | ICEO |
| C. | IC |
| D. | IE |
| Answer» B. ICEO | |
| 31. |
The dimensions of L/CR are that of ___________ |
| A. | Farad |
| B. | Henry |
| C. | Ohm |
| D. | None of the above |
| Answer» D. None of the above | |
| 32. |
The disadvantage of base resistor method of transistor biasing is that it ___________ |
| A. | Is complicated |
| B. | Is sensitive to changes in ß |
| C. | Provides high stability |
| D. | None of the above |
| Answer» C. Provides high stability | |
| 33. |
A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages, the values of IE, IB and IC will ___________ |
| A. | remain the same |
| B. | increase |
| C. | decrease |
| D. | none of the above |
| Answer» B. increase | |
| 34. |
Most of the majority carriers from the emitter ___________ |
| A. | recombine in the base |
| B. | recombine in the emitter |
| C. | pass through the base region to the collector |
| D. | none of the above |
| Answer» D. none of the above | |
| 35. |
If the resistance of a tuned circuit is increased, the Q of the circuit ___________ |
| A. | Is increased |
| B. | Is decreased |
| C. | Remains the same |
| D. | None of the above |
| Answer» C. Remains the same | |
| 36. |
If L/C ratio of a parallel LC circuit is increased, the Q of the circuit ___________ |
| A. | Is decreased |
| B. | Is increased |
| C. | Remains the same |
| D. | None of the above |
| Answer» C. Remains the same | |
| 37. |
When either L or C is increased, the resonant frequency of LC circuit ___________ |
| A. | Remains the same |
| B. | Increases |
| C. | Decreases |
| D. | Insufficient data |
| Answer» D. Insufficient data | |
| 38. |
If the value of a is 0.9, then value of ß is ___________ |
| A. | 9 |
| B. | 0.9 |
| C. | 900 |
| D. | 90 |
| Answer» E. | |
| 39. |
In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß is ___________ |
| A. | 100 |
| B. | 50 |
| C. | about 1 |
| D. | 200 |
| Answer» E. | |
| 40. |
Double tuned circuits are used in ___________ stages of a radio receiver |
| A. | IF |
| B. | Audio |
| C. | Output |
| D. | None of the above |
| Answer» B. Audio | |
| 41. |
BC 147 transistor indicates that it is made of ___________ |
| A. | germanium |
| B. | silicon |
| C. | carbon |
| D. | none of the above |
| Answer» C. carbon | |
| 42. |
When the temperature changes, the operating point is shifted due to . |
| A. | Change in ICBO |
| B. | Change in VCC |
| C. | Change in the values of circuit resistance |
| D. | None of the above |
| Answer» B. Change in VCC | |
| 43. |
The stability factor of a collector feedback bias circuit is ___________ that of base resistor bias. |
| A. | The same as |
| B. | More than |
| C. | Less than |
| D. | None of the above |
| Answer» D. None of the above | |
| 44. |
In a transistor amplifier circuit VCE = VCB + ___________ |
| A. | VBE |
| B. | 2 VBE |
| C. | 5 VBE |
| D. | None of the above |
| Answer» B. 2 VBE | |
| 45. |
IC = aIE + ___________ |
| A. | IB |
| B. | ICEO |
| C. | ICBO |
| D. | ßIB |
| Answer» D. ßIB | |
| 46. |
In a transistor, signal is transferred from a ___________ circuit |
| A. | high resistance to low resistance |
| B. | low resistance to high resistance |
| C. | high resistance to high resistance |
| D. | low resistance to low resistance |
| Answer» C. high resistance to high resistance | |
| 47. |
IC = [a / (1 - a )] IB + ___________ |
| A. | ICEO |
| B. | ICBO |
| C. | IC |
| D. | (1 - a ) IB |
| Answer» B. ICBO | |
| 48. |
A MOSFET differs from a JFET mainly because ___________ |
| A. | of power rating |
| B. | the MOSFET has two gates |
| C. | the JFET has a pn junction |
| D. | none of the above |
| Answer» D. none of the above | |
| 49. |
A JFET has high input impedance because ___________ |
| A. | it is made of semiconductor material |
| B. | input is reverse biased |
| C. | of impurity atoms |
| D. | none of the above |
| Answer» C. of impurity atoms | |
| 50. |
The constant-current region of a JFET lies between |
| A. | cut off and saturation |
| B. | cut off and pinch-off |
| C. | o and IDSS |
| D. | pinch-off and breakdown |
| Answer» E. | |