MCQOPTIONS
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MCQOPTIONS
This section includes 657 Mcqs, each offering curated multiple-choice questions to sharpen your Testing Subject knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The output characteristics of a JFET closely resemble the output characteristics of a ___________ valve |
| A. | pentode |
| B. | tetrode |
| C. | triode |
| D. | diode |
| Answer» B. tetrode | |
| 2. |
The gate voltage in a JFET at which drain current becomes zero is called ___________ voltage |
| A. | saturation |
| B. | pinch-off |
| C. | active |
| D. | cut-off |
| Answer» C. active | |
| 3. |
If the drain, source, and channel are all a p-type material, and the transistor operates in both modes, this is a p-channel E-MOSFET. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 4. |
A JFET is very similar to a BJT. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 5. |
A common-drain configured JFET is also called a source-follower. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 6. |
The gate-biased JFET characteristic curve includes IDS. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 7. |
The amount of gate voltage needed to turn the JFET completely off is called VGS(OFF). |
| A. | 1 |
| B. | |
| Answer» B. | |
| 8. |
Transconductance is also called mutual conductance. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 9. |
A D-MOSFET cannot be biased using zero biasing. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 10. |
A MOSFET has an isolated gate. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 11. |
The overall input capacitance of a dual-gate D-MOSFET is lower because the devices are usually connected: |
| A. | in parallel |
| B. | with separate insulation |
| C. | with separate inputs |
| D. | in series |
| Answer» E. | |
| 12. |
With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with ID = 3 mA? |
| A. | 6 V |
| B. | 10 V |
| C. | 24 V |
| D. | 30 V |
| Answer» B. 10 V | |
| 13. |
With a JFET, a ratio of output current change against an input voltage change is called: |
| A. | transconductance |
| B. | siemens |
| C. | resistivity |
| D. | gain |
| Answer» B. siemens | |
| 14. |
Changing ________ can control the voltage gain of a common-source amplifier. |
| A. | the input voltage |
| B. | m |
| C. | VDD |
| D. | RS |
| Answer» C. VDD | |
| 15. |
What is the transconductance of an FET when ID = 1 mA and VGS = 1 V? |
| A. | 1 kS |
| B. | 1 mS |
| C. | 1 k |
| D. | 1 m |
| Answer» C. 1 k | |
| 16. |
One advantage of voltage-divider bias is that the dependency of drain current, ID, on the range of Q points is _________. |
| A. | reduced |
| B. | increased |
| C. | not affected |
| D. | none of the above |
| Answer» B. increased | |
| 17. |
IDSS can be defined as: |
| A. | the minimum possible drain current |
| B. | the maximum possible current with VGS held at –4 V |
| C. | the maximum possible current with VGS held at 0 V |
| D. | the maximum drain current with the source shorted |
| Answer» D. the maximum drain current with the source shorted | |
| 18. |
A very simple bias for a D-MOSFET is called: |
| A. | self biasing |
| B. | gate biasing |
| C. | zero biasing |
| D. | voltage-divider biasing |
| Answer» D. voltage-divider biasing | |
| 19. |
The common-source JFET amplifier has: |
| A. | a very high input impedance and a relatively low voltage gain |
| B. | a high input impedance and a very high voltage gain |
| C. | a high input impedance and a voltage gain less than 1 |
| D. | no voltage gain |
| Answer» B. a high input impedance and a very high voltage gain | |
| 20. |
With the E-MOSFET, when gate input voltage is zero, drain current is: |
| A. | at saturation |
| B. | zero |
| C. | IDSS |
| D. | widening the channel |
| Answer» C. IDSS | |
| 21. |
When applied input voltage varies the resistance of a channel, the result is called: |
| A. | saturization |
| B. | polarization |
| C. | cutoff |
| D. | field effect |
| Answer» E. | |
| 22. |
An enhancement-type MOSFET or E-MOSFET can be turned on when the channel is depleted. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 23. |
In an n-channel JFET, what will happen at the pinch-off voltage? |
| A. | the value of VDS at which further increases in VDS will cause no further increase in ID |
| B. | the value of VGS at which further decreases in VGS will cause no further increases in ID |
| C. | the value of VDG at which further decreases in VDG will cause no further increases in ID |
| D. | the value of VDS at which further increases in VGS will cause no further increases in ID |
| Answer» B. the value of VGS at which further decreases in VGS will cause no further increases in ID | |
| 24. |
In a voltage-divider JFET circuit, ID is a maximum when VGS = 0 V. |
| A. | 1 |
| B. | |
| C. | 1 |
| D. | |
| Answer» B. | |
| 25. |
A MOSFET has how many terminals? |
| A. | 2 or 3 |
| B. | 3 |
| C. | 4 |
| D. | 3 or 4 |
| Answer» E. | |
| 26. |
When an input signal reduces the channel size, the process is called: |
| A. | enhancement |
| B. | substrate connecting |
| C. | gate charge |
| D. | depletion |
| Answer» E. | |
| 27. |
When is a vertical channel E-MOSFET used? |
| A. | for high frequencies |
| B. | for high voltages |
| C. | for high currents |
| D. | for high resistances |
| Answer» D. for high resistances | |
| 28. |
The type of bias most often used with E-MOSFET circuits is: |
| A. | constant current |
| B. | drain-feedback |
| C. | voltage-divider |
| D. | zero biasing |
| Answer» C. voltage-divider | |
| 29. |
A JFET can be either a current-controlled device or a voltage-controlled device. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 30. |
In the constant-current region, how will the IDS change in an n-channel JFET? |
| A. | As VGS decreases ID decreases. |
| B. | As VGS increases ID increases. |
| C. | As VGS decreases ID remains constant. |
| D. | As VGS increases ID remains constant. |
| Answer» B. As VGS increases ID increases. | |
| 31. |
When VGS = 0 V, a JFET is: |
| A. | saturated |
| B. | an analog device |
| C. | an open switch |
| D. | cut off |
| Answer» B. an analog device | |
| 32. |
A __________ change in VDS will produce a __________ change in ID. |
| A. | small, large |
| B. | large, small |
| C. | large, large |
| D. | small, small |
| Answer» C. large, large | |
| 33. |
What is the input impedance of a common-gate configured JFET? |
| A. | very low |
| B. | low |
| C. | high |
| D. | very high |
| Answer» B. low | |
| 34. |
The charge carriers in a junction field effect transistor (JFET) will flow from source to drain in a p-channel and from drain to source in an n-channel. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 35. |
How will a D-MOSFET input impedance change with signal frequency? |
| A. | As frequency increases input impedance increases. |
| B. | As frequency increases input impedance is constant. |
| C. | As frequency decreases input impedance increases. |
| D. | As frequency decreases input impedance is constant. |
| Answer» D. As frequency decreases input impedance is constant. | |
| 36. |
A JFET has 3 terminals: gate, drain, and source. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 37. |
How will electrons flow through a p-channel JFET? |
| A. | from source to drain |
| B. | from source to gate |
| C. | from drain to gate |
| D. | from drain to source |
| Answer» E. | |
| 38. |
Which type of JFET bias requires a negative supply voltage? |
| A. | feedback |
| B. | source |
| C. | gate |
| D. | voltage divider |
| Answer» D. voltage divider | |
| 39. |
A _______________ JFET amplifier provides a voltage gain of less than one. |
| A. | common-source |
| B. | common-gate |
| C. | common-drain |
| D. | cascode amplifier |
| Answer» D. cascode amplifier | |
| 40. |
Using voltage-divider biasing, what is the voltage at the gate VGS? |
| A. | 5.2 V |
| B. | 4.2 V |
| C. | 3.2 V |
| D. | 2.2 V |
| Answer» B. 4.2 V | |
| 41. |
When the JFET is no longer able to control the current, this point is called the: |
| A. | breakdown region |
| B. | depletion region |
| C. | saturation point |
| D. | pinch-off region |
| Answer» B. depletion region | |
| 42. |
To get a negative gate-source voltage in a self-biased JFET circuit, you must use a ________. |
| A. | negative gate supply voltage |
| B. | ground |
| C. | voltage divider |
| D. | source resistor |
| Answer» E. | |
| 43. |
Which JFET configuration would connect a high-resistance signal source to a low-resistance load? |
| A. | source follower |
| B. | common-source |
| C. | common-drain |
| D. | common-gate |
| Answer» B. common-source | |
| 44. |
JFET terminal "legs" are connections to the drain, the gate, and the: |
| A. | channel |
| B. | source |
| C. | substrate |
| D. | cathode |
| Answer» C. substrate | |
| 45. |
A "U" shaped, opposite-polarity material built near a JFET-channel center is called the: |
| A. | gate |
| B. | block |
| C. | drain |
| D. | heat sink |
| Answer» B. block | |
| 46. |
Breakdown voltage and pinch-off voltage of a JFET are different terms for the same voltage level. |
| A. | 1 |
| B. | |
| C. | 1 |
| D. | |
| Answer» C. 1 | |
| 47. |
Which component is considered to be an "OFF" device? |
| A. | transistor |
| B. | JFET |
| C. | D-MOSFET |
| D. | E-MOSFET |
| Answer» E. | |
| 48. |
When an input delta of 2 V produces a transconductance of 1.5 mS, what is the drain current delta? |
| A. | 666 mA |
| B. | 3 mA |
| C. | 0.75 mA |
| D. | 0.5 mA |
| Answer» C. 0.75 mA | |
| 49. |
When testing an n-channel D-MOSFET, resistance G to D = , resistance G to S = , resistance D to SS = and 500 , depending on the polarity of the ohmmeter, and resistance D to S = 500 . What is wrong? |
| A. | short D to S |
| B. | open G to D |
| C. | open D to SS |
| D. | nothing |
| Answer» E. | |
| 50. |
D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to overcome the loss of: |
| A. | low output impedance |
| B. | capacitive reactance |
| C. | high input impedance |
| D. | inductive reactance |
| Answer» D. inductive reactance | |