Explore topic-wise MCQs in Optical Communication.

This section includes 19 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.

1.

What is usually required by FETs to optimize the figure of merit?

A. Attenuation of barrier
B. Matching with the depletion region
C. Dispersion of the gate region
D. Matching with the detector
Answer» E.
Discussion
2.

A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________

A. 276Mbits-1
B. 274 Mbits-1
C. 278Mbits-1
D. 302Mbits-1
Answer» C. 278Mbits-1
Discussion
3.

Which receiver can be fabricated using PIN-FET hybrid approach?

A. Trans-impedance front end receiver
B. Gallium arsenide receiver
C. High-impedance front-end
D. Low-impedance front-end
Answer» B. Gallium arsenide receiver
Discussion
4.

It is difficult to achieve higher transmission rates using conventional __________

A. Voltage amplifier
B. Waveguide Structures
C. PIN-FET or APD receivers
D. MESFET
Answer» D. MESFET
Discussion
5.

PIN-FET hybrid receiver is designed for use at a transmission rate of _____________

A. 130 Mbits-1
B. 110 Mbits-1
C. 120 Mbits-1
D. 140 Mbits-1
Answer» E.
Discussion
6.

The PIN-FET hybrid receivers are a combination of ______________

A. Hybrid resistances and capacitances
B. Pin photodiode and low noise amplifier (GaAs MESFETs)
C. P-N photodiode and low noise amplifier (GaAs MESFETs)
D. Attenuator and low noise amplifier (GaAs MESFETs)
Answer» C. P-N photodiode and low noise amplifier (GaAs MESFETs)
Discussion
7.

Gallium arsenide MESFETs are advantageous than Silicon FETs.

A. True
B. False
Answer» B. False
Discussion
8.

The properties of a bipolar transistor are superior to the FET.

A. True
B. False
Answer» C.
Discussion
9.

IT_IS_DIFFICULT_TO_ACHIEVE_HIGHER_TRANSMISSION_RATES_USING_CONVENTIONAL___________?$

A. Voltage amplifier
B. Waveguide Structures
C. PIN-FET or APD receivers
D. MESFET
Answer» D. MESFET
Discussion
10.

A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________$

A. 276Mbits<sup>-1</sup>
B. 274 Mbits<sup>-1</sup>
C. 278Mbits<sup>-1</sup>
D. 302Mbits<sup>-1</sup>
Answer» C. 278Mbits<sup>-1</sup>
Discussion
11.

Which_receiver_can_be_fabricated_using_PIN-FET_hybrid_approach?$

A. Trans-impedance front end receiver
B. Gallium arsenide receiver
C. High-impedance front-end
D. Low-impedance front-end
Answer» B. Gallium arsenide receiver
Discussion
12.

PIN-FET hybrid receiver is designed for use at a transmission rate of ?

A. 130Mbits<sup>-1</sup>
B. 110Mbits<sup>-1</sup>
C. 120Mbits<sup>-1</sup>
D. 140Mbits<sup>-1</sup>
Answer» E.
Discussion
13.

The PIN-FET hybrid receivers are a combination of :

A. Hybrid resistances and capacitances
B. Pin photodiode and low noise amplifier (GaAs MESFETs)
C. P-N photodiode and low noise amplifier (GaAs MESFETs)
D. Attenuator and low noise amplifier (GaAs MESFETs)
Answer» C. P-N photodiode and low noise amplifier (GaAs MESFETs)
Discussion
14.

Gallium arsenide MESFETs are advantageous than Silicon FETs. State whether the given statement is true or false.

A. True
B. False
Answer» B. False
Discussion
15.

High-performance microwave FETs are fabricated from ___________

A. Silicon
B. Germanium
C. Gallium arsenide
D. Zinc
Answer» D. Zinc
Discussion
16.

Bipolar transistor is more useful amplifying device than FET at frequencies _____________

A. Above 1000 MHz
B. Equal to 1 MHz
C. Below 25 MHz
D. Above 25 MHz
Answer» E.
Discussion
17.

The properties of a bipolar transistor are superior to the FET. State whether the given statement is true or false.

A. True
B. False
Answer» C.
Discussion
18.

FET device has extremely high input impedance greater than _________

A. 10<sup>7</sup>Ohms and less than 10<sup>8</sup>
B. 10<sup>6</sup>Ohms and less than 10<sup>7</sup>
C. 10<sup>14</sup>Ohms
D. 10<sup>23</sup>Ohms
Answer» D. 10<sup>23</sup>Ohms
Discussion
19.

____________ is the lowest noise amplifier device.

A. Silicon FET
B. Amplifier-A
C. Attenuator
D. Resonator-B
Answer» B. Amplifier-A
Discussion