MCQOPTIONS
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MCQOPTIONS
This section includes 72 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
Which of the following is (are) the terminal(s) of a field-effect transistor (FET). |
| A. | Drain |
| B. | Gate |
| C. | Source |
| D. | All of the above |
| Answer» E. | |
| 52. |
The three terminals of the JFET are the ________, ________, and ________. |
| A. | gate, collector, emitter |
| B. | base, collector, emitter |
| C. | gate, drain, source |
| D. | gate, drain, emitter |
| Answer» D. gate, drain, emitter | |
| 53. |
Which of the following transistor(s) has (have) depletion and enhancement types? |
| A. | BJT |
| B. | JFET |
| C. | MOSFET |
| D. | None of the above |
| Answer» D. None of the above | |
| 54. |
Refer to the following curves. Calculate I D at V GS = 1 V. |
| A. | 8.167 mA |
| B. | 4.167 mA |
| C. | 6.167 mA |
| D. | 0.616 mA |
| Answer» C. 6.167 mA | |
| 55. |
The region to the left of the pinch-off locus is referred to as the ________ region. |
| A. | saturation |
| B. | cutoff |
| C. | ohmic |
| D. | All of the above |
| Answer» D. All of the above | |
| 56. |
Referring to the following transfer curve, determine the level of V GS when the drain current is 20 mA. |
| A. | 1.66 V |
| B. | –1.66 V |
| C. | 0.66 V |
| D. | –0.66 V |
| Answer» B. –1.66 V | |
| 57. |
What is the purpose of adding two Zener diodes to the MOSFET in this figure? |
| A. | To reduce the input impedance |
| B. | To protect the MOSFET for both polarities |
| C. | To increase the input impedance |
| D. | None of the above |
| Answer» C. To increase the input impedance | |
| 58. |
The transfer curve is not defined by Shockley's equation for the ________. |
| A. | JFET |
| B. | depletion-type MOSFET |
| C. | enhancement-type MOSFET |
| D. | BJT |
| Answer» D. BJT | |
| 59. |
The drain current will always be one-fourth of I DSS as long as the gate-to-source voltage is ________ the pinch-off value. |
| A. | one-fourth |
| B. | one-half |
| C. | three-fourths |
| D. | None of the above |
| Answer» C. three-fourths | |
| 60. |
Referring to this transfer curve. Calculate (using Shockley's equation) V GS at I D = 4mA. |
| A. | 2.54 V |
| B. | –2.54 V |
| C. | –12 V |
| D. | Undefined |
| Answer» C. –12 V | |
| 61. |
The BJT is a ________ device. The FET is a ________ device. |
| A. | bipolar, bipolar |
| B. | bipolar, unipolar |
| C. | unipolar, bipolar |
| D. | unipolar, unipolar |
| Answer» C. unipolar, bipolar | |
| 62. |
It is the insulating layer of ________ in the MOSFET construction that accounts for the very desirable high input impedance of the device. |
| A. | SiO |
| B. | GaAs |
| C. | SiO 2 |
| D. | HCl |
| Answer» D. HCl | |
| 63. |
Which of the following controls the level of I D ? |
| A. | V GS |
| B. | V DS |
| C. | I G |
| D. | V DG |
| Answer» B. V DS | |
| 64. |
Referring to this transfer curve, determine I D at V GS = 2 V. |
| A. | 0.444 mA |
| B. | 1.333 mA |
| C. | 0.111 mA |
| D. | 4.444 mA |
| Answer» B. 1.333 mA | |
| 65. |
What is the ratio of I D / I DSS for V GS = 0.5 V P ? |
| A. | 0.25 |
| B. | 0.5 |
| C. | 1 |
| D. | 0 |
| Answer» B. 0.5 | |
| 66. |
At which of the following condition(s) is the depletion region uniform? |
| A. | No bias |
| B. | V DS > 0 V |
| C. | V DS = V P |
| D. | None of the above |
| Answer» B. V DS > 0 V | |
| 67. |
Refer to this portion of a specification sheet. Determine the values of reverse-gate-source voltage and gate current if the FET was forced to accept it. |
| A. | 25 Vdc, –200 nAdc |
| B. | –25 Vdc, 10 mAdc |
| C. | –6 Vdc, –1.0 nAdc |
| D. | None of the above |
| Answer» C. –6 Vdc, –1.0 nAdc | |
| 68. |
Which of the following applies to a safe MOSFET handling? |
| A. | Always pick up the transistor by the casing. |
| B. | Power should always be off when network changes are made. |
| C. | Always touch ground before handling the device. |
| D. | All of the above |
| Answer» E. | |
| 69. |
What is the range of an FET's input impedance? |
| A. | 10 to 1 k |
| B. | 1 k to 10 k |
| C. | 50 k to 100 k |
| D. | 1 M to several hundred M |
| Answer» E. | |
| 70. |
What is the level of I G in an FET? |
| A. | Zero amperes |
| B. | Equal to I D |
| C. | Depends on V DS |
| D. | Undefined |
| Answer» B. Equal to I D | |
| 71. |
What is the level of drain current I D for gate-to-source voltages V GS less than (more negative than) the pinch-off level? |
| A. | zero amperes |
| B. | I DSS |
| C. | Negative value |
| D. | Undefined |
| Answer» B. I DSS | |
| 72. |
Which of the following ratings appear(s) in the specification sheet for an FET? |
| A. | Voltages between specific terminals |
| B. | Current levels |
| C. | Power dissipation |
| D. | All of the above |
| Answer» E. | |