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MCQOPTIONS
This section includes 137 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 101. |
CMOS digital switches use |
| A. | n-channel and p-channel D-MOSFETs in series. |
| B. | n-channel and p-channel D-MOSFETs in parallel. |
| C. | n-channel and p-channel E-MOSFETs in series. |
| D. | n-channel and p-channel E-MOSFETs in parallel. |
| Answer» D. n-channel and p-channel E-MOSFETs in parallel. | |
| 102. |
FET amplifiers provide ________. |
| A. | excellent voltage gain |
| B. | high input impedance |
| C. | low power consumption |
| D. | All of the above |
| Answer» E. | |
| 103. |
Where do you get the level of g m and r d for an FET transistor? |
| A. | from the dc biasing arrangement |
| B. | from the specification sheet |
| C. | from the characteristics |
| D. | All of the above |
| Answer» E. | |
| 104. |
Determine the value for R D if the ac gain is 8. |
| A. | 1.51 k |
| B. | 1.65 k |
| C. | 1.85 k |
| D. | 2.08 k |
| Answer» C. 1.85 k | |
| 105. |
The input resistance at the gate of a FET is extremely |
| A. | high. |
| B. | low. |
| C. | - |
| D. | - |
| Answer» B. low. | |
| 106. |
Which of the following is (are) related to depletion-type MOSFETs? |
| A. | can be negative, zero, or positive. |
| B. | g m can be greater or smaller than g m0 . |
| C. | I D can be larger than I DSS . |
| D. | All of the above |
| Answer» E. | |
| 107. |
The more horizontal the characteristic curves on the drain characteristics, the ________ the output impedance. |
| A. | less |
| B. | same |
| C. | greater |
| D. | - |
| Answer» D. - | |
| 108. |
Referring to this figure, calculate Z o for V GS Q = –3.2 V. |
| A. | 362.52 |
| B. | 340.5 |
| C. | 420.5 |
| D. | 480.9 |
| Answer» E. | |
| 109. |
Referring to this figure, obtain g m for I D = 6 mA. |
| A. | 2.83 mS |
| B. | 3.00 mS |
| C. | 3.25 mS |
| D. | 3.46 mS |
| Answer» E. | |
| 110. |
Referring to this figure, calculate Z i if r d = 19 k . |
| A. | 2.42 M |
| B. | 2.50 M |
| C. | 2.53 M |
| D. | 2.59 M |
| Answer» D. 2.59 M | |
| 111. |
Referring to this figure, calculate Z o if r d = 19 k . |
| A. | 1.75 k |
| B. | 1.81 k |
| C. | 1.92 k |
| D. | 2.00 k |
| Answer» C. 1.92 k | |
| 112. |
Referring to the figure below, determine the output impedance for V GS = –3 V at V DS = 5 V. |
| A. | 100 k |
| B. | 80 k |
| C. | 25 k |
| D. | 5 k |
| Answer» B. 80 k | |
| 113. |
What common factor determines the voltage gain and input resistance of a common-gate amplifier? |
| A. | R D |
| B. | R L |
| C. | g m |
| D. | - |
| Answer» D. - | |
| 114. |
Which FET amplifier(s) has (have) a phase inversion between input and output signals? |
| A. | common-gate |
| B. | common-drain |
| C. | common-source |
| D. | all of the above |
| Answer» D. all of the above | |
| 115. |
Class D amplifiers differ from all other classes of amplifiers because |
| A. | the output transistors are operated as switches. |
| B. | of their very low input capacitance. |
| C. | of their high-frequency response capabilities. |
| D. | they employ dual MOSFETs. |
| Answer» B. of their very low input capacitance. | |
| 116. |
On which of the following parameters does r d have no or little impact in a source-follower configuration? |
| A. | Z i |
| B. | Z o |
| C. | A v |
| D. | All of the above |
| Answer» E. | |
| 117. |
Which type of FETs can operate with a gate-to-source Q-point value of 0 V? |
| A. | JFET |
| B. | E-MOSFET |
| C. | D-MOSFET |
| D. | - |
| Answer» D. - | |
| 118. |
MOSFET digital switching is used to produce which digital gates? |
| A. | inverters |
| B. | NOR gates |
| C. | NAND gates |
| D. | all of the above |
| Answer» E. | |
| 119. |
When V GS = 0.5 V p g m is ________ the maximum value. |
| A. | one-fourth |
| B. | one-half |
| C. | three-fourths |
| D. | - |
| Answer» C. three-fourths | |
| 120. |
MOSFETs make better power switches than BJTs because they have |
| A. | lower turn-off times. |
| B. | lower on-state resistance. |
| C. | a positive temperature coefficient. |
| D. | all of the above |
| Answer» E. | |
| 121. |
What is the typical value for the input impedance Z i for JFETs? |
| A. | 100 k |
| B. | 1 M |
| C. | 10 M |
| D. | 1000 M |
| Answer» E. | |
| 122. |
The steeper the slope of the I D versus V GS curve, the ________ the level of g m . |
| A. | less |
| B. | same |
| C. | greater |
| D. | - |
| Answer» D. - | |
| 123. |
Which of the following is a required condition to simplify the equations for Z o and A v for the self-bias configuration? |
| A. | r d 10R D |
| B. | r d = R D |
| C. | r d 10R D |
| D. | None of the above |
| Answer» E. | |
| 124. |
Referring to this figure, find Z o if y os = 20 S. |
| A. | 1.85 k |
| B. | 1.92 k |
| C. | 2.05 k |
| D. | 2.15 k |
| Answer» C. 2.05 k | |
| 125. |
There is a ________º phase inversion between gate and source in a source follower. |
| A. | 0 |
| B. | 90 |
| C. | 180 |
| D. | none of the above |
| Answer» B. 90 | |
| 126. |
What is (are) the function(s) of the coupling capacitors C 1 and C 2 in an FET circuit? |
| A. | to create an open circuit for dc analysis |
| B. | to isolate the dc biasing arrangement from the applied signal and load |
| C. | to create a short-circuit equivalent for ac analysis |
| D. | All of the above |
| Answer» E. | |
| 127. |
The class D amplifier uses what type of transistors? |
| A. | JFETs |
| B. | BJTs |
| C. | MOSFETs |
| D. | any of the above |
| Answer» D. any of the above | |
| 128. |
Referring to this figure, calculate the value of R D if the ac gain is 10. Assume V GSQ = ¼V p . |
| A. | 2.2 k |
| B. | 2.42 k |
| C. | 2.62 k |
| D. | 2.82 k |
| Answer» E. | |
| 129. |
Referring to the following figure, calculate g m for V GS Q = –1.25 V. |
| A. | 2 mS |
| B. | 2.5 mS |
| C. | 2.75 mS |
| D. | 3.25 mS |
| Answer» D. 3.25 mS | |
| 130. |
For what value of I D is g m equal to 0.5 g m0 ? |
| A. | 0 mA |
| B. | 0.25 I DSS |
| C. | 0.5 I DSS |
| D. | I DSS |
| Answer» C. 0.5 I DSS | |
| 131. |
Use the following equation to calculate g m for a JFET having I DSS = 10 mA, V P = –5 V, and V GS Q = –2.5 V. |
| A. | 2 mS |
| B. | 3 mS |
| C. | 4 mS |
| D. | 5 mS |
| Answer» B. 3 mS | |
| 132. |
Referring to this figure, calculate A v for y os = 58 S. |
| A. | –7.29 |
| B. | –7.50 |
| C. | –8.05 |
| D. | –8.55 |
| Answer» B. –7.50 | |
| 133. |
A common-drain amplifier is similar in configuration to which BJT amplifier? |
| A. | common-emitter |
| B. | common-collector |
| C. | common-base |
| D. | common-gate |
| Answer» C. common-base | |
| 134. |
Referring to this figure, calculate A v if r d = 19 k . |
| A. | –2.85 |
| B. | –3.26 |
| C. | –2.95 |
| D. | –3.21 |
| Answer» D. –3.21 | |
| 135. |
A common-source amplifier is similar in configuration to which BJT amplifier? |
| A. | common-base |
| B. | common-collector |
| C. | common-emitter |
| D. | emitter-follower |
| Answer» D. emitter-follower | |
| 136. |
The theoretical efficiency of a class D amplifier is |
| A. | 75%. |
| B. | 85%. |
| C. | 90%. |
| D. | 100%. |
| Answer» E. | |
| 137. |
A common-gate amplifier is similar in configuration to which BJT amplifier? |
| A. | common-emitter |
| B. | common-collector |
| C. | common-base |
| D. | emitter-follower |
| Answer» D. emitter-follower | |