MCQOPTIONS
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MCQOPTIONS
This section includes 137 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The ________ does not support Shockley's equation. |
| A. | JFET |
| B. | D-type MOSFET |
| C. | E-type MOSFET |
| D. | None of the above |
| Answer» D. None of the above | |
| 2. |
rd changes from one operation region to another with ________ values typically occurring at ________ levels of VGS (closer to zero). |
| A. | lower, lower |
| B. | lower, higher |
| C. | higher, lower |
| D. | None of the above |
| Answer» B. lower, higher | |
| 3. |
The gate-to-source voltage VGS of a(n) ________ must be larger than the threshold VGS(Th) for the transistor to conduct. |
| A. | JFET |
| B. | D-type MOSFET |
| C. | E-type MOSFET |
| D. | None of the above |
| Answer» D. None of the above | |
| 4. |
The ________ configuration has an input impedance, which is other than RG. |
| A. | common-source |
| B. | common-gate |
| C. | common-drain |
| D. | None of the above |
| Answer» C. common-drain | |
| 5. |
The input and output signals are 180º out of phase in a ________ configuration. |
| A. | source-follower |
| B. | common-gate |
| C. | common-drain |
| D. | voltage-divider |
| Answer» E. | |
| 6. |
The isolation between input and output circuits in the ac equivalent circuit is lost in a ________ configuration. |
| A. | common-gate |
| B. | common-source |
| C. | common-drain |
| D. | None of the above |
| Answer» B. common-source | |
| 7. |
A ________ configuration has a voltage gain less than 1. |
| A. | fixed-bias |
| B. | self-bias |
| C. | source-follower |
| D. | voltage-divider |
| Answer» D. voltage-divider | |
| 8. |
________ configuration(s) has (have) Zo RD. |
| A. | Fixed-bias |
| B. | Self-bias |
| C. | Voltage-divider |
| D. | All of the above |
| Answer» E. | |
| 9. |
The input and output signals are in phase in a ________ configuration. |
| A. | fixed-bias |
| B. | source-follower |
| C. | voltage-divider |
| D. | self-bias |
| Answer» C. voltage-divider | |
| 10. |
________ is the only parameter that is different between voltage-divider and fixed-bias configurations. |
| A. | Zi |
| B. | Av |
| C. | Zo |
| D. | None of the above |
| Answer» B. Av | |
| 11. |
________ is a required step in order to calculate Zo. |
| A. | Setting IG equal to zero |
| B. | Setting Vi equal to zero |
| C. | Setting ID equal to IDSS |
| D. | None of the above |
| Answer» C. Setting ID equal to IDSS | |
| 12. |
________ is the network-input impedance for a JFET fixed-bias configuration. |
| A. | RG |
| B. | RD |
| C. | Zero |
| D. | None of the above |
| Answer» B. RD | |
| 13. |
The ________ configuration has the distinct disadvantage of requiring two dc voltage sources. |
| A. | self-bias |
| B. | voltage-divider |
| C. | fixed-bias |
| D. | All of the above |
| Answer» D. All of the above | |
| 14. |
The range of output admittance yos for FETs is ________. |
| A. | 5 S–10 S |
| B. | 10 S –50 S |
| C. | 50 S –100 S |
| D. | 200 S –500 S |
| Answer» C. 50 S –100 S | |
| 15. |
The range of input impedance Zi for MOSFETs is ________. |
| A. | 1 k–10 k |
| B. | 100 k–1 M |
| C. | 10 M–100 M |
| D. | 1012 to 1015 |
| Answer» E. | |
| 16. |
gm has its maximum value for a JFET at ________. |
| A. | [A]. |
| B. | 0.5 |
| C. | 0.3 |
| D. | IDSS |
| Answer» E. | |
| 17. |
The value of gm is at its maximum gm0 at VGS equal to ________ and zero at VGS equal to ________. |
| A. | 0 V, |
| B. | , 0 V |
| C. | 0.5, 0.3 |
| D. | 0.3 , 0.5 |
| Answer» B. , 0 V | |
| 18. |
Transconductance is the ratio of changes in ________. |
| A. | ID to VGS |
| B. | ID to VDS |
| C. | VGS to IG |
| D. | VGS to VDS |
| Answer» B. ID to VDS | |
| 19. |
The transconductance gm ________ as the Q-point moves from Vp to IDSS |
| A. | decreases |
| B. | remains the same |
| C. | increases |
| D. | None of the above |
| Answer» D. None of the above | |
| 20. |
The ________ controls the ________ of an FET. |
| A. | ID, VGS |
| B. | VGS, ID |
| C. | IG, VDS |
| D. | IG, ID |
| Answer» C. IG, VDS | |
| 21. |
________ is an undefined quantity in a JFET. |
| A. | Ai |
| B. | Av |
| C. | Zi |
| D. | Zo |
| Answer» B. Av | |
| 22. |
________ is the amplification factor in FET transistor amplifiers. |
| A. | Zi |
| B. | gm |
| C. | ID |
| D. | IG |
| Answer» C. ID | |
| 23. |
The ________ is quite popular in digital circuits, especially in CMOS circuits that require very low power consumption. |
| A. | JFET |
| B. | BJT |
| C. | D-type MOSFET |
| D. | E-type MOSFET |
| Answer» E. | |
| 24. |
The depletion MOSFET circuit has a ________ input impedance than a similar JFET configuration. |
| A. | much higher |
| B. | much lower |
| C. | lower |
| D. | higher |
| Answer» B. much lower | |
| 25. |
Determine the value for RD if the ac gain is 8. |
| A. | 1.51 k |
| B. | 1.65 k |
| C. | 1.85 k |
| D. | 2.08 k |
| Answer» C. 1.85 k | |
| 26. |
A field-effect transistor amplifier provides excellent voltage gain with the added feature of a ________ input impedance. |
| A. | low |
| B. | medium |
| C. | high |
| D. | None of the above |
| Answer» D. None of the above | |
| 27. |
Referring to this figure, calculate the value of RD if the ac gain is 10. Assume VGSQ = ¼Vp. |
| A. | 2.2 k |
| B. | 2.42 k |
| C. | 2.62 k |
| D. | 2.82 k |
| Answer» E. | |
| 28. |
Referring to this figure, calculate Av if rd = 19 k. |
| A. | –2.85 |
| B. | –3.26 |
| C. | –2.95 |
| D. | –3.21 |
| Answer» D. –3.21 | |
| 29. |
Referring to this figure, calculate Zo if rd = 19 k. |
| A. | 1.75 k |
| B. | 1.81 k |
| C. | 1.92 k |
| D. | 2.00 k |
| Answer» C. 1.92 k | |
| 30. |
Referring to this figure, calculate Av for yos = 58 S. |
| A. | –7.29 |
| B. | –7.50 |
| C. | –8.05 |
| D. | –8.55 |
| Answer» B. –7.50 | |
| 31. |
Referring to this figure, calculate Zi if rd = 19 k. |
| A. | 2.42 M |
| B. | 2.50 M |
| C. | 2.53 M |
| D. | 2.59 M |
| Answer» D. 2.59 M | |
| 32. |
Referring to this figure, calculate Zi for yos = 20 S. Assume VGSQ = −2.2V. |
| A. | 300.2 |
| B. | 330.4 |
| C. | 340.5 |
| D. | 350 |
| Answer» C. 340.5 | |
| 33. |
Referring to this figure, calculate Zo for VGSQ = –3.2 V. |
| A. | 362.52 |
| B. | 340.5 |
| C. | 420.5 |
| D. | 480.9 |
| Answer» E. | |
| 34. |
On which of the following parameters does rd have no or little impact in a source-follower configuration? |
| A. | Zi |
| B. | Zo |
| C. | Av |
| D. | All of the above |
| Answer» E. | |
| 35. |
Referring to this figure, calculate Zo if yos = 40 S. |
| A. | 2.92 k |
| B. | 3.20 k |
| C. | 3.25 k |
| D. | 3.75 k |
| Answer» B. 3.20 k | |
| 36. |
Which of the following is a required condition to simplify the equations for Zo and Av for the self-bias configuration? |
| A. | rd 10RD |
| B. | rd = RD |
| C. | rd 10RD |
| D. | None of the above |
| Answer» D. None of the above | |
| 37. |
For the fixed-bias configuration, if ________. |
| A. | RD |
| B. | [B]. |
| C. | RG |
| D. | [D]. |
| Answer» C. RG | |
| 38. |
Referring to this figure, calculate Av if yos = 20 S. |
| A. | –3.48 |
| B. | –3.56 |
| C. | –3.62 |
| D. | –4.02 |
| Answer» D. –4.02 | |
| 39. |
Referring to this figure, find Zo if yos = 20 S. |
| A. | 1.85 k |
| B. | 1.92 k |
| C. | 2.05 k |
| D. | 2.15 k |
| Answer» C. 2.05 k | |
| 40. |
Where do you get the level of gm and rd for an FET transistor? |
| A. | from the dc biasing arrangement |
| B. | from the specification sheet |
| C. | from the characteristics |
| D. | All of the above |
| Answer» E. | |
| 41. |
What is (are) the function(s) of the coupling capacitors C1 and C2 in an FET circuit? |
| A. | to create an open circuit for dc analysis |
| B. | to isolate the dc biasing arrangement from the applied signal and load |
| C. | to create a short-circuit equivalent for ac analysis |
| D. | All of the above |
| Answer» E. | |
| 42. |
If ID = IDSS / 2, gm = ________ gmo. |
| A. | 1 |
| B. | 0.707 |
| C. | 0.5 |
| Answer» C. 0.5 | |
| 43. |
When VGS = 0.5 Vp gm is ________ the maximum value. |
| A. | one-fourth |
| B. | one-half |
| C. | three-fourths |
| Answer» C. three-fourths | |
| 44. |
Calculate gm and rd if yfs = 4 mS and yos = 15S. |
| A. | 4 mS, 66.7 k |
| B. | 4 mS, 15 k |
| C. | 66.7 k, 4 mS |
| D. | None of the above |
| Answer» B. 4 mS, 15 k | |
| 45. |
The steeper the slope of the ID versus VGS curve, the ________ the level of gm. |
| A. | less |
| B. | same |
| C. | greater |
| Answer» D. | |
| 46. |
Referring to the figure below, determine the output impedance for VGS = –3 V at VDS = 5 V. |
| A. | 100 k |
| B. | 80 k |
| C. | 25 k |
| D. | 5 k |
| Answer» B. 80 k | |
| 47. |
Use the following equation to calculate gm for a JFET having IDSS = 10 mA, VP = –5 V, and VGSQ = –2.5 V. |
| A. | 2 mS |
| B. | 3 mS |
| C. | 4 mS |
| D. | 5 mS |
| Answer» B. 3 mS | |
| 48. |
Referring to this figure, obtain gm for ID = 6 mA. |
| A. | 2.83 mS |
| B. | 3.00 mS |
| C. | 3.25 mS |
| D. | 3.46 mS |
| Answer» E. | |
| 49. |
Referring to the transfer characteristics shown below, calculate gm at VGSQ = –1 V. |
| A. | 2 mS |
| B. | 3 mS |
| C. | 4 mS |
| D. | 5 mS |
| Answer» C. 4 mS | |
| 50. |
Referring to the following figure, calculate gm for VGSQ = –1.25 V. |
| A. | 2 mS |
| B. | 2.5 mS |
| C. | 2.75 mS |
| D. | 3.25 mS |
| Answer» D. 3.25 mS | |