MCQOPTIONS
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MCQOPTIONS
This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
From the above equation, assuming the same values for the for ni, n= p and T. Given that p0=105cm-3. Calculate the quasi-fermi energy level in eV? |
| A. | 0.1985 |
| B. | 0.15 |
| C. | 0.1792 |
| D. | 0.1 |
| Answer» D. 0.1 | |
| 2. |
Consider a bar of silicon having carrier concentration n0=1015 cm-3 and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K? |
| A. | 0.2982 eV |
| B. | 0.2984 eV |
| C. | 0.5971 eV |
| D. | 1Ev |
| Answer» C. 0.5971 eV | |
| 3. |
Ef lies in the middle of the energy level indicates the unequal concentration of the holes and the electrons? |
| A. | True |
| B. | False |
| Answer» C. | |
| 4. |
Where will be the position of the Fermi level of the n-type material when ND=NA? |
| A. | Ec |
| B. | Ev |
| C. | Ef |
| D. | Efi |
| Answer» B. Ev | |
| 5. |
CONSIDER_A_BAR_OF_SILICON_HAVING_CARRIER_CONCENTRATION_N0=1015_CM-3_AND_NI=1010CM-3._ASSUME_THE_EXCESS_CARRIER_CONCENTRATIONS_TO_BE_N=1013CM-3,_CALCULATE_THE_QUASI-FERMI_ENERGY_LEVEL_AT_T=300K??$ |
| A. | 0.2982 eV |
| B. | 0.2984 eV |
| C. | 0.5971 eV |
| D. | 1Ev |
| Answer» C. 0.5971 eV | |
| 6. |
From the above equation, assuming the same values for the for ni, n= p and T. Given that p0=105cm-3. Calculate the quasi-fermi energy level in eV?$ |
| A. | 0.1985 |
| B. | 0.15 |
| C. | 0.1792 |
| D. | 0.1 |
| Answer» D. 0.1 | |
| 7. |
Ef lies in the middle of the energy level indicates the unequal concentration of the holes and the electrons? |
| A. | True |
| B. | False |
| Answer» C. | |
| 8. |
If excess charge carriers are created in the semiconductor then the new Fermi level is known as Quasi-Fermi level. Is it true? |
| A. | True |
| B. | False |
| Answer» B. False | |
| 9. |
Is it true, when the temperature rises, the electrons in the conduction band becomes greater than the donor atoms? |
| A. | True |
| B. | False |
| Answer» B. False | |
| 10. |
When the temperature of either n-type or p-type increases, determine the movement of the position of the Fermi energy level? |
| A. | Towards up of energy gap |
| B. | Towards down of energy gap |
| C. | Towards centre of energy gap |
| D. | Towards out of page |
| Answer» D. Towards out of page | |
| 11. |
Where will be the position of the Fermi level of the n-type material when ND=NA? |
| A. | Ec |
| B. | Ev |
| C. | Ef |
| D. | Efi |
| Answer» B. Ev | |
| 12. |
Which of the following expression represent the correct formulae for calculating the exact position of the Fermi level for p-type material? |
| A. | E<sub>F</sub> = E<sub>V</sub> + kTln(N<sub>D</sub> / N<sub>A</sub> ) |
| B. | E<sub>F</sub> = -E<sub>V</sub> + kTln(N<sub>D</sub> / N<sub>A</sub> ) |
| C. | E<sub>F</sub> = E<sub>V</sub> – kTln(N<sub>D</sub> / N<sub>A</sub> ) |
| D. | E<sub>F</sub> = -E<sub>V</sub> – kTln(N<sub>D</sub> / N<sub>A</sub> ) |
| Answer» B. E<sub>F</sub> = -E<sub>V</sub> + kTln(N<sub>D</sub> / N<sub>A</sub> ) | |
| 13. |
Which states get filled in the conduction band when the donor-type impurity is added to a crystal? |
| A. | Na |
| B. | Nd |
| C. | N |
| D. | P |
| Answer» C. N | |