Ef lies in the middle of the energy level indicates the unequal concen – McqOptions

MCQOPTIONS

1.	Ef lies in the middle of the energy level indicates the unequal concentration of the holes and the electrons?
A.	True
B.	False
Answer» C.

Discussion

No Comment Found

Related MCQs

From the above equation, assuming the same values for the for ni, n= p and T. Given that p0=105cm-3. Calculate the quasi-fermi energy level in eV?
Consider a bar of silicon having carrier concentration n0=1015 cm-3 and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K?
Ef lies in the middle of the energy level indicates the unequal concentration of the holes and the electrons?
Where will be the position of the Fermi level of the n-type material when ND=NA?
CONSIDER_A_BAR_OF_SILICON_HAVING_CARRIER_CONCENTRATION_N0=10<SUP>15</SUP>_CM<SUP>-3</SUP>_AND_NI=10<SUP>10</SUP>CM<SUP>-3</SUP>._ASSUME_THE_EXCESS_CARRIER_CONCENTRATIONS_TO_BE_N=10<SUP>13</SUP>CM<SUP>-3</SUP>,_CALCULATE_THE_QUASI-FERMI_ENERGY_LEVEL_AT_T=300K??$
From the above equation, assuming the same values for the for ni, n= p and T. Given that p0=10<sup>5</sup>cm<sup>-3</sup>. Calculate the quasi-fermi energy level in eV?$
<p>Ef lies in the middle of the energy level indicates the unequal concentration of the holes and the electrons?</p>
If excess charge carriers are created in the semiconductor then the new Fermi level is known as Quasi-Fermi level. Is it true?
Is it true, when the temperature rises, the electrons in the conduction band becomes greater than the donor atoms?
When the temperature of either n-type or p-type increases, determine the movement of the position of the Fermi energy level?