Explore topic-wise MCQs in Engineering.

This section includes 9294 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering knowledge and support exam preparation. Choose a topic below to get started.

151.

A parallel polarized wave is incident from air into paraffin having relative permittivity 3, the value of its Brewster angle is

A. 0
B. 30
C. 45
D. 60
Answer» E.
152.

For a 400 kHz transmission line having L = 0.5 mH/km, C = 0.08 mF and negligible R and G, the value of propagation constant P will be

A. 15.9 radians/km
B. 31.8 radians/km
C. 63.6 radians/km
D. 105.4 radians/km
Answer» B. 31.8 radians/km
153.

The Depth of penetration of EM wave in medium having conductivity at a frequency of 1 MHz is 25 cm. The depth of penetration at a frequency of 4 MHz will be

A. 6.25 cm
B. 12.50 cm
C. 50 cm
D. 100 cm
Answer» C. 50 cm
154.

The radiation resistance of a /16 wire dipole in free space will be nearly

A. 1 Ω
B. 3 Ω
C. 13 Ω
D. 30 Ω
Answer» C. 13 Ω
155.

Two identical antennas are placed in the = p/2 plane as shown in the figure. The elements have equal amplitude excitation with 180 polarity difference, operating of the far-zone resultant electric field strength normalized with that of a single element, both computed for = 0, is

A. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/203-414-2.png">
B. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/203-414-3.png">
C. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/203-414-4.png">
D. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/203-414-5.png">
Answer» E.
156.

Calculate wave impedance for TE mode

A. (377)&ohm;
B. 226 &ohm;
C.
D. 629 &ohm;
Answer» E.
157.

In a 100 turn coil, if the flux through each turn is (t3 - 2t)mWb, the magnitude of the induced emf in the coil at a time of 4 sec is

A. 46 mV
B. 56 mV
C. 4.6 V
D. 5.6 V
Answer» D. 5.6 V
158.

Consider a loss less antenna with a directive gain of + 6 dB. If 1 mW of power is fed to it the total power radiated by the antenna will be

A. 4 mW
B. 1 mW
C. 7 mW
D. 1/4 mW
Answer» B. 1 mW
159.

The electric field of the incident wave is , where = 3 x 109p and = 10 p. The electric field of the transmitted wave Et is given by

A. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/197-244-2.png">
B. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/197-244-3.png">
C. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/197-244-4.png">
D. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/197-244-5.png">
Answer» D. <img src="/_files/images/electronics-and-communication-engineering/electromagnetic-field-theory/197-244-5.png">
160.

Which of the following should dominant wave have?

A. Lowest cut off frequency
B. Highest cut off frequency
C. No attenuation
D. No phase shift
Answer» B. Highest cut off frequency
161.

A (75 - j 40) W load is connected to a co-axial line of z0 = 75 at 6 MHz. The load matching on the line can be accomplished by connecting

A. a short circuit stub at the load
B. an inductance at the load
C. a short circuit stub at a specific distance from the load
D. a capacitance at a specific distance from the load
Answer» C. a short circuit stub at a specific distance from the load
162.

A plane wave is characterized by the wave is

A. linearly polarized
B. circularly polarized
C. elliptically polarized
D. unpolarized
Answer» D. unpolarized
163.

A plane electromagnetic wave travels in dielectric medium of relative permittivity 9. Relative to free space, the velocity of propagation in the dielectric is

A. increased by a factor of 9
B. increased by a factor of 3
C. unchanged
D. reduced by a factor of 1/3
Answer» E.
164.

Consider a 300 &ohm;, quarter wave long at 1 GHz transmission line as shown in figure. It is connected to a 10 V, 50 &ohm; source at one end is left open circuited at the other end. The magnitude of the voltage at the open circuit end of the line is

A. 10 V
B. 5 V
C. 60 V
D. 60/7 volt
Answer» B. 5 V
165.

A hollow rectangular waveguide has dimensions a = 2b. Calculate the amount of attenuation, if the frequency is 3 GHz, and b = 1 cm.

A. 49
B. 47.33
C. 50.33
D. 50
Answer» C. 50.33
166.

The phase angle corresponding to /4 in a standing-wave pattern is

A. 30
B. 90
C. 135
D. 180
Answer» C. 135
167.

Calculate the directivity of an antenna for E = 30 , H = 60

A. 46
B. 23
C. 50
D. 100
Answer» C. 50
168.

Ferrite have

A. low copper loss
B. low eddy current loss
C. low resistivity
D. higher specific gravity compared to iron
Answer» D. higher specific gravity compared to iron
169.

In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be

A. 0.5 eV above valence band
B. 0.28 eV above valence band
C. 0.1 eV above valence band
D. below the valence band
Answer» C. 0.1 eV above valence band
170.

In an n-p-n transistor, the majority carriers in the base are

A. electrons
B. holes
C. both holes and electrons
D. either holes or electrons
Answer» B. holes
171.

The amount of photoelectric emission current depends on

A. frequency of incident radiation
B. intensity of incident radiation
C. both frequency and intensity of incident radiation
D. none of the above
Answer» C. both frequency and intensity of incident radiation
172.

Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer» B. Both A and R are true but R is not a correct explanation of A
173.

In the circuit of figure the function of resistor R and diode D are

A. to limit the current and to protect LED against over voltage
B. to limit the voltage and to protect LED against over current
C. to limit the current and protect LED against reverse breakdown voltage.
D. none of the above.
Answer» D. none of the above.
174.

As compared to an ordinary semiconductor diode, a Schottky diode

A. has higher reverse saturation current
B. has higher reverse saturation current and higher cut in voltage
C. has higher reverse saturation current and lower cut in voltage
D. has lower reverse saturation current and lower cut in voltage
Answer» D. has lower reverse saturation current and lower cut in voltage
175.

In a bipolar transistor which current is largest

A. collector current
B. base current
C. emitter current
D. base current or emitter current
Answer» D. base current or emitter current
176.

The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

A. AB
B. BC
C. CD
D. BD
Answer» C. CD
177.

Crossover distortion behaviour is characteristic of

A. class A O/P stage
B. class B O/P stage
C. class AB output stage
D. common pulse O/P state
Answer» C. class AB output stage
178.

If aac for transistor is 0.98 then ac is equal to

A. 51
B. 49
C. 47
D. 45
Answer» C. 47
179.

Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer» C. A is true but R is false
180.

In an n-p-n transistor biased for operation in forward active region

A. emitter is positive with respect to base
B. collector is positive with respect to base
C. base is positive with respect to emitter and collector is positive with respect to base
D. none of the above
Answer» D. none of the above
181.

An increase in temperature increases the width of depletion layer.

A. True
B. False
Answer» C.
182.

In a 4 bit weighted resistor D/A converter, the resistor value corresponding to LSB is 32 k . The resistor value corresponding to MSB will be

A. 32 K
B. 16 K
C. 8 K
D. 4 K
Answer» E.
183.

Consider a unity feedback control system with open-loop transfer function The steady state error of the system due to a unity step input is :

A. zero
B. K
C. 1/K
D. infinite
Answer» B. K
184.

If x[n] then the sequence x[n] is

A. non-periodic
B. periodic
C. depends on
D. <i>n</i>
E. none of these
Answer» B. periodic
185.

The impulse response and the excitation function of a linear time invariant causal system are shown in figure (a) and (b) respectively. The output of the system at t = 2 sec is equal to

A. 0
B. 2
C. <img src="/_files/images/electronics-and-communication-engineering/exam-question-papers/10-04-43-3.png">
D. <img src="/_files/images/electronics-and-communication-engineering/exam-question-papers/10-04-43-4.png">
Answer» E.
186.

Consider a stable and causal system with impulse response h(t) and system function H(S). Suppose H(S) is rational, contains a pole at S = - 2, and does not have a zero at the origin. The location of all other poles and zero is unknown for each of the following statements. Let us determine whether statement is true or false.

  1. f[h(t) e-3t] converges
  2. h(t) has finite duration
  3. H(s) = H(- s)
Choose correct option.

A. 1 - True, 2 - False, 3 - True, 4 - False
B. 1 - False, 2 - False, 3 - False, 4 - True
C. 1 - False, 2 - False, 3 - False, 4 - False
D. 1 - True, 2 - can't say, 3 - True, 4 - can't say
Answer» D. 1 - True, 2 - can't say, 3 - True, 4 - can't say
187.

At room temperature the current in an intrinsic semiconductor is due to

A. holes
B. electrons
C. ions
D. holes and electrons
Answer» E.
188.

Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

A. True
B. False
Answer» C.
189.

The most commonly used semiconductor material is

A. silicon
B. germanium
C. mixture of silicon and germanium
D. none of the above
Answer» B. germanium
190.

In which of these is reverse recovery time nearly zero?

A. Zener diode
B. Tunnel diode
C. Schottky diode
D. PIN diode
Answer» D. PIN diode
191.

A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

A. 100
B. 99
C. 1.01
D. 0.99
Answer» B. 99
192.

In the following non planar graph number of independent loop equations are

A. 8
B. 12
C. 7
D. 5
Answer» E.
193.

A transmission line has a characteristic impedance of 50 and a resistance of 0.1 /m, if the line is distortion less, the attenuation constant (in Np/m) is

A. 500
B. 5
C. 0.014
D. 0.002
Answer» E.
194.

A certain 8 bit uniform quantization PCM system can accommodate a signal ranging from - 1 V to + V. The rms value of the signal is V . The signal to quantization noise ratio is:

A. 30 dB
B. 46.91 dB
C. 40 dB
D. 49.92 dB
Answer» E.
195.

In an ac circuit the fundamental component of current wave lags the corresponding voltage wave by 20 . The third harmonic component of current wave lags the corresponding voltage by an angle.

A. less than 20
B. more than 20
C. equal to 20
D. equal to or more than 20
Answer» C. equal to 20
196.

The output of a diode detector contains

A. D.C. voltage
B. modulating signal
C. RF ripple
D. all of the above
Answer» E.
197.

Noise generated in a resistor is also known as

A. partition noise
B. white noise
C. thermal noise
D. shot noise
Answer» D. shot noise
198.

Which of the following is used to provide tracking between RF amplifier and local oscillator stages of receiver?

A. Variable tuning inductor
B. Ganged tuning inductor
C. Variable capacitor
D. Variable preset
Answer» C. Variable capacitor
199.

For global communication, the number of satellites needed is

A. 1
B. 3
C. 10
D. 5
Answer» C. 10
200.

In a radio receiver, if the intermediate frequency is too low

A. Image-frequency rejection will improve
B. Selectivity will be too sharp
C. The frequency selectivity of the local oscillator will have to be lowered
D. All of the above
Answer» C. The frequency selectivity of the local oscillator will have to be lowered