

MCQOPTIONS
This section includes 1475 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering knowledge and support exam preparation. Choose a topic below to get started.
251. |
A(n) ________ amplifier configuration has an input impedance approximately equal to the input resistor Ri and an output impedance approximately equal to the output impedance of the op-amp itself. |
A. | non-inverting |
B. | inverting |
C. | voltage-follower |
Answer» C. voltage-follower | |
252. |
Which of the following circuits is referred to as a BiMOS circuit? |
A. | Bipolar and FET |
B. | Bipolar and MOSFET |
C. | Opposite-type MOSFETs |
D. | None of the above |
Answer» C. Opposite-type MOSFETs | |
253. |
Refer to the given figure. A dc voltage of 1.2 V is applied. VCC = 12 V. What is the output voltage? |
A. | 1.2 V |
B. | 1.2 V |
C. | 0 V |
D. | 12 V |
Answer» C. 0 V | |
254. |
In the differential amplifier circuit, which of the following terminals are connected together? |
A. | Bases |
B. | Collectors |
C. | One base to another collector |
D. | Emitters |
Answer» E. | |
255. |
In a common-source amplifier, the purpose of the bypass capacitor, C2, is to |
A. | keep the source effectively at ac ground. |
B. | provide a dc path to ground. |
C. | provide coupling to the input. |
D. | provide coupling to the load. |
Answer» B. provide a dc path to ground. | |
256. |
Refer to this figure. The voltage gain is |
A. | 1.2. |
B. | 2.4. |
C. | 4.4. |
D. | 8.8. |
Answer» E. | |
257. |
Which of the following applies to MOSFETs? |
A. | No direct electrical connection between the gate terminal and the channel |
B. | Desirable high input impedance |
C. | Uses metal for the gate, drain, and source connections |
D. | All of the above |
Answer» E. | |
258. |
A BJT is a ________-controlled device. The JFET is a ________ - controlled device. |
A. | voltage, voltage |
B. | voltage, current |
C. | current, voltage |
D. | current, current |
Answer» D. current, current | |
259. |
How many terminals can a MOSFET have? |
A. | 2 |
B. | 3 |
C. | 4 |
D. | 3 or 4 |
Answer» E. | |
260. |
Refer to the following figure. Calculate VGS at ID = 8 mA for k = 0.278 10 2 A/V2. |
A. | 3.70 V |
B. | 5.36 V |
C. | 7.36 V |
D. | 2.36 V |
Answer» B. 5.36 V | |
261. |
What is the purpose of adding two Zener diodes to the MOSFET in this figure? |
A. | To reduce the input impedance |
B. | To protect the MOSFET for both polarities |
C. | To increase the input impedance |
D. | None of the above |
Answer» C. To increase the input impedance | |
262. |
Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA. |
A. | 1.66 V |
B. | 1.66 V |
C. | 0.66 V |
D. | 0.66 V |
Answer» B. 1.66 V | |
263. |
The region to the left of the pinch-off locus is referred to as the ________ region. |
A. | saturation |
B. | cutoff |
C. | ohmic |
D. | All of the above |
Answer» D. All of the above | |
264. |
Refer to the following curves. Calculate ID at VGS = 1 V. |
A. | 8.167 mA |
B. | 4.167 mA |
C. | 6.167 mA |
D. | 0.616 mA |
Answer» C. 6.167 mA | |
265. |
Which of the following is (are) the advantage(s) of VMOS over MOSFETs? |
A. | Reduced channel resistance |
B. | Higher current and power ratings |
C. | Faster switching time |
D. | All of the above |
Answer» E. | |
266. |
Which of the following transistor(s) has (have) depletion and enhancement types? |
A. | BJT |
B. | JFET |
C. | MOSFET |
D. | None of the above |
Answer» D. None of the above | |
267. |
It is the insulating layer of ________ in the MOSFET construction that accounts for the very desirable high input impedance of the device. |
A. | SiO |
B. | GaAs |
C. | SiO |
D. | <sub>2</sub> |
E. | HCl |
Answer» D. <sub>2</sub> | |
268. |
The BJT is a ________ device. The FET is a ________ device. |
A. | bipolar, bipolar |
B. | bipolar, unipolar |
C. | unipolar, bipolar |
D. | unipolar, unipolar |
Answer» C. unipolar, bipolar | |
269. |
Referring to this transfer curve. Calculate (using Shockley's equation) VGS at ID = 4mA. |
A. | 2.54 V |
B. | 2.54 V |
C. | 12 V |
D. | Undefined |
Answer» C. 12 V | |
270. |
The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage is ________ the pinch-off value. |
A. | one-fourth |
B. | one-half |
C. | three-fourths |
D. | None of the above |
Answer» C. three-fourths | |
271. |
The transfer curve is not defined by Shockley's equation for the ________. |
A. | JFET |
B. | depletion-type MOSFET |
C. | enhancement-type MOSFET |
D. | BJT |
Answer» D. BJT | |
272. |
What is the ratio of ID / IDSS for VGS = 0.5 VP? |
A. | 0.25 |
B. | 0.5 |
C. | 1 |
D. | 0 |
Answer» B. 0.5 | |
273. |
Referring to this transfer curve, determine ID at VGS = 2 V. |
A. | 0.444 mA |
B. | 1.333 mA |
C. | 0.111 mA |
D. | 4.444 mA |
Answer» B. 1.333 mA | |
274. |
Refer to this figure. If ID = 4 mA, IDSS = 16 mA, and VGS(off) = 8 V, find VDS. |
A. | 19.2 V |
B. | 6 V |
C. | 10.8 V |
D. | 30 V |
Answer» D. 30 V | |
275. |
If ID = IDSS / 2, gm = ________ gmo. |
A. | 1 |
B. | 0.707 |
C. | 0.5 |
Answer» C. 0.5 | |
276. |
Which of the following FETs has the lowest input impedance? |
A. | JFET |
B. | MOSFET depletion-type |
C. | MOSFET enhancement-type |
D. | None of the above |
Answer» B. MOSFET depletion-type | |
277. |
The three terminals of the JFET are the ________, ________, and ________. |
A. | gate, collector, emitter |
B. | base, collector, emitter |
C. | gate, drain, source |
D. | gate, drain, emitter |
Answer» D. gate, drain, emitter | |
278. |
Which of the following is (are) the terminal(s) of a field-effect transistor (FET). |
A. | Drain |
B. | Gate |
C. | Source |
D. | All of the above |
Answer» E. | |
279. |
For an FET small-signal amplifier, one could go about troubleshooting a circuit by ________. |
A. | viewing the circuit board for poor solder joints |
B. | using a dc meter |
C. | applying a test ac signal |
D. | All of the above |
Answer» E. | |
280. |
Referring to this figure, calculate Av if yos = 20 |
A. | 3.48 |
B. | 3.56 |
C. | 3.62 |
D. | 4.02 |
Answer» D. 4.02 | |
281. |
Refer to this Figure. If Vin was increased in amplitude a little, the signal voltage at the source of Q2 would |
A. | increase. |
B. | decrease. |
C. | remain the same. |
D. | distort. |
Answer» D. distort. | |
282. |
Refer to the given figure. The op-amp has a unity-gain bandwidth of 1.7 MHz. Find the bandwidth of the circuit. |
A. | 155 MHz |
B. | 155 kHz |
C. | 155 Hz |
D. | 15.5 Hz |
Answer» C. 155 Hz | |
283. |
An RC network has R = 500 k |
A. | 31831 Hz |
B. | 31.831 kHz |
C. | 0.031831 MHz |
D. | all of the above |
E. | none of the above |
Answer» E. none of the above | |
284. |
What is the cutoff frequency of an op-amp if the unity-gain frequency is 1.5 MHz and the open-loop gain is 100,000? |
A. | 5 Hz |
B. | 10 Hz |
C. | 15 Hz |
D. | 20 Hz |
Answer» D. 20 Hz | |
285. |
A JFET cascade amplifier employs |
A. | 2 common-gate amplifiers. |
B. | 2 common-source amplifiers. |
C. | 1 common-gate and 1 common-source amplifier. |
D. | 1 common-gate and 1 common-drain amplifier. |
Answer» D. 1 common-gate and 1 common-drain amplifier. | |
286. |
Open-loop voltage gain of an op-amp can range up to ________. |
A. | 10,000 |
B. | 50,000 |
C. | 100,000 |
D. | 200,000 |
Answer» E. | |
287. |
The midrange open-loop gain of an op-amp is 135 dB. With negative feedback this gain is reduced to 72 dB. The closed-loop gain is |
A. | 135 dB. |
B. | 72 dB. |
C. | 207 dB. |
D. | 63 dB. |
Answer» C. 207 dB. | |
288. |
This circuit is an example of a ________. |
A. | single-ended input |
B. | double-ended (differential) input |
C. | double-ended output |
D. | common-mode operation |
Answer» E. | |
289. |
What is the scale multiplier (factor) of a basic integrator? |
A. | R / C |
B. | C / R |
C. | RC |
D. | 1 / RC |
Answer» E. | |
290. |
Calculate the overall voltage gain of the circuit if R1 = 100 and Rf = 1 k |
A. | 1 |
B. | 10 |
C. | 11 |
D. | 9 |
Answer» C. 11 | |
291. |
What is the voltage gain of the unity follower? |
A. | 0 |
B. | 1 |
C. | 1 |
D. | Infinity |
Answer» C. 1 | |
292. |
Determine the total discharge time for the capacitor in a clamper having C = 0.01 |
A. | 5 ms |
B. | 25 ms |
C. | 2.5 ms |
D. | 50 ms |
Answer» C. 2.5 ms | |
293. |
Which of the following applies to a safe MOSFET handling? |
A. | Always pick up the transistor by the casing. |
B. | Power should always be off when network changes are made. |
C. | Always touch ground before handling the device. |
D. | All of the above |
Answer» E. | |
294. |
Which of the following ratings appear(s) in the specification sheet for an FET? |
A. | Voltages between specific terminals |
B. | Current levels |
C. | Power dissipation |
D. | All of the above |
Answer» E. | |
295. |
What is the level of drain current ID for gate-to-source voltages VGS less than (more negative than) the pinch-off level? |
A. | zero amperes |
B. | I |
C. | <sub>DSS</sub> |
D. | Negative value |
E. | Undefined |
Answer» B. I | |
296. |
A common-gate amplifier is similar in configuration to which BJT amplifier? |
A. | common-emitter |
B. | common-collector |
C. | common-base |
D. | emitter-follower |
Answer» D. emitter-follower | |
297. |
The intensity of LED is greatest at ________ degrees and the least at ________ degrees. |
A. | 0, 90 |
B. | 45, 90 |
C. | 0, 45 |
D. | 90, 180 |
Answer» B. 45, 90 | |
298. |
The reverse saturation current Is will just ________ in magnitude for every 10 C increase in temperature. |
A. | double |
B. | remain the same |
C. | halve |
D. | triple |
Answer» B. remain the same | |
299. |
In a particular problem, which mode has the highest level of IDQ? |
A. | Ideal |
B. | Approximate equivalent |
C. | Exact mode using characteristic curve |
D. | None of the above |
Answer» B. Approximate equivalent | |
300. |
The full-wave voltage doubler provides ________ filtering action than (as) the half-wave voltage doubler. |
A. | better |
B. | poorer |
C. | the same |
D. | None of the above |
Answer» B. poorer | |