Explore topic-wise MCQs in Engineering.

The FET is a ________ device depending solely on either electron (n-channel) or hole (p-channel) conduction.

In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region.

The active region of an FET is bounded by ________.

A(n) ________ can be used to check the condition of an FET.

The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________.

The transfer curve can be obtained by ________.

A junction field-effect transistor (JFET) is a ________ device.

The region to the right of the pinch-off locus is commonly referred to as the ________ region.

The primary difference between the construction of a MOSFET and an FET is the ________.

________ is less dependent on the transistor beta.

In an emitter-bias configuration, the ________ the resistance RE, the ________ the stability factor, and the ________ stable is the system.

In a transistor-switching network, the operating point switches from ________ to ________ regions along the load line.

A significant increase in leakage current due to increase in temperature creates ________between IB curves.

The saturation current of a transistor used in a fixed-bias circuit is ________ its value used in an emitter-stabilized or voltage-divider bias circuit for the same values of RC.

The ________ configuration has an input impedance, which is other than RG.

The Thevenin equivalent network is used in the analysis of the ________ circuit.

The ________the stability factor, the ________sensitive the network is to variations in that parameter.

The dc load line is determined solely by the ________.

In a transistor-switching network, the level of the resistance between the collector and emitter is ________ at the saturation and is ________at the cutoff.

A ________ configuration has a voltage gain less than 1.

The input and output signals are 180 out of phase in a ________ configuration.

A field-effect transistor amplifier provides excellent voltage gain with the added feature of a ________ input impedance.

The input and output signals are in phase in a ________ configuration.

The ________ configuration has the distinct disadvantage of requiring two dc voltage sources.

The depletion MOSFET circuit has a ________ input impedance than a similar JFET configuration.

The transconductance gm ________ as the Q-point moves from Vp to IDSS

rd changes from one operation region to another with ________ values typically occurring at ________ levels of VGS (closer to zero).

The ________ is quite popular in digital circuits, especially in CMOS circuits that require very low power consumption.

________ configuration(s) has (have) Zo RD.

The ________ transistor has become one of the most important devices used in the design and construction of integrated circuits for digital computers.

VMOS FETs have a ________ temperature coefficient that will combat the possibility of thermal runaway.

In a fixed-bias circuit with a fixed supply voltage VCC, the selection of a ________ resistor sets the level of ________ current for the operating point.

________ should be considered in the analysis or design of any electronic amplifiers.

By definition, quiescent means ________.

As the temperature increases, ________, VBE ________, and ICO ________ in value for every 10 C.

A clamping network must have ________.

With the Zener diode in the "on" state, increasing IL will ________ IZ and ________IR.

A single diode in a half-wave rectifier conducts for 180 of the input cycle.

Diode limiters add a dc level to an ac signal.

In a diode clamper, the capacitor retains a charge approximately equal to the peak value of the input.

Zener diodes are used in regulator networks to ________.

For the ideal diode the transition between states will occur at the point on the characteristic curve when VD = ________ V and ID = ________ A.

A Zener diode is in a ________ impedance region in the forward bias while it has a ________ impedance region in the reverse bias.

The movement of free electrons in a semiconductor material is termed electron voltage.

The source voltage must be ________ the voltage drop across the diode to conduct the diode.

The process of removing one-half the input signal to establish a dc level is called ________.

The ratio of the total swing of the output of a clamper to its input total swing is ________.

The PIV rating of the diodes in a full-wave rectifier must be larger than ________ Vm.

In this voltage multiplier, measuring from the top of the transformer winding will provide ________ multiples of Vm at the output, whereas measuring the output voltage from the bottom of the transformer will provide ________ multiples of the peak Vm.

The intersection of the load line with the characteristic curve determines the ________ of the system.

In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of I_D referred to as the ________ region.

In an emitter-bias configuration, the ________ the resistance R_E, the the stability factor, and the stable is the system.

In a transistor-switching network, the operating point switches from to regions along the load line.

A significant increase in leakage current due to increase in temperature creates ________between I_B curves.

The saturation current of a transistor used in a fixed-bias circuit is ________ its value used in an emitter-stabilized or voltage-divider bias circuit for the same values of R_C.

The ________ configuration has an input impedance, which is other than R_G.

The the stability factor, the sensitive the network is to variations in that parameter.

In a transistor-switching network, the level of the resistance between the collector and emitter is at the saturation and is at the cutoff.

The transconductance g_m ________ as the Q-point moves from V_p to I_DSS

r_d changes from one operation region to another with values typically occurring at levels of V_GS (closer to zero).

________ configuration(s) has (have) Z_o R_D.

In a fixed-bias circuit with a fixed supply voltage V_CC, the selection of a resistor sets the level of current for the operating point.

As the temperature increases, ________, V_BE ________, and I_CO ________ in value for every 10 C.

With the Zener diode in the "on" state, increasing I_L will ________ I_Z and ________I_R.

For the ideal diode the transition between states will occur at the point on the characteristic curve when V_D = ________ V and I_D = ________ A.

A Zener diode is in a impedance region in the forward bias while it has a impedance region in the reverse bias.

The PIV rating of the diodes in a full-wave rectifier must be larger than ________ V_m.

In this voltage multiplier, measuring from the top of the transformer winding will provide ________ multiples of V_m at the output, whereas measuring the output voltage from the bottom of the transformer will provide ________ multiples of the peak V_m.