Explore topic-wise MCQs in Engineering.

In an analog MOSFET switch, the input is applied to the gate and the output is taken from the source.

The common-drain configuration has extremely high input resistance.

Digital MOSFET switches are used in the sample-and-hold circuit of an analog-to-digital converter.

The common-source configuration has extremely high input resistance.

The common-drain amplifier is also called a source-follower.

A load resistance connected to the output of an amplifier reduces the voltage gain.

In a class D amplifier, the low-pass filter comes directly after the pulse-width modulator.

In the hybrid or Giacoletto model, which one of the following does rb include?

If the parasitic capacitors were the only elements to determine the high cutoff frequency, the ________ frequency would be the determining factor.

For any inverting amplifier, the impedance capacitance will be ________ by a Miller effect capacitance sensitive to the gain of the amplifier and the interelectrode capacitance.

This circuit is an example of a ________.

This is an example of the output swing for a class ________ amplifier.

Refer to this figure. The dc voltage on the collector, VC, is

What is the first phase of the dual-slope method of conversion?

The frequency distortion arising because of varying amplifier gain with frequency is considerably reduced in a negative-voltage feedback amplifier circuit.

This is an equivalent circuit for the ________ diode.

Refer to this figure. Which symbol is correct for a zener diode?

In a class B push-pull amplifier, crossover distortion occurs when both transistors are off and the input signal voltage must exceed VBE before a transistor conducts.

An E-MOSFET can be operated with either positive or negative values of VGS.

The lower critical frequency is also known as the

Refer to this figure. Increasing the values of the filter section resistors in this circuit will cause the fc to

You can select the values for the emitter and collector resistors from the information that is provided for this circuit.

For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.

In a class D amplifier, the output transistors are operated in a nonlinear mode.

Generally, higher voltage gains can be achieved with bipolar amplifiers than with FET amplifiers.

Bypassing a source resistor reduces the voltage gain.

The gate-to-source voltage VGS of a(n) ________ must be larger than the threshold VGS(Th) for the transistor to conduct.

For the typical transistor amplifier in the active region, VCE is usually about ________ % to ________ % of VCC.

For the dc analysis the network can be isolated from the indicated ac levels by replacing the capacitor with ________.

There is no phase inversion between the gate and the drain voltages.

The isolation between input and output circuits in the ac equivalent circuit is lost in a ________ configuration.

The ________ does not support Shockley's equation.

Forward bias is the condition that allows current through a pn junction.

An intrinsic crystal is one that contains a small amount of impurities.

N-type semiconductor material has very few free electrons.

The silicon material used in semiconductors is extremely pure with no additives.

The frequency in a VCO can be varied with a DC voltage.

Oscillators operate on negative feedback.

The start-up gain of an oscillator must be greater than 1.

In the astable mode, a 555 timer is connected as a free-running relaxation oscillator.

The dc voltage level of a silicon diode is ________ its ideal model.

As the load resistor increases, the slope of the dc load line and the levels of diode current ________.

Once the Zener diode is in the "on" state, VZ is always ________ VL.

The absence of the Si or Ge and VD label on a diode denotes ________ notation.

The x-intercept of the load line with the characteristic curve is determined by the ________.

A germanium diode is approximated by ________ equivalent for voltages less than 0.3 V.

The output voltage of a center-tapped full-wave rectifier equals the secondary output voltage.

As VGS becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level.

In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS.

The FET resistance in the ohmic region is ________ at VP and ________ at the origin.

In the hybrid or Giacoletto model, which one of the following does r_b include?

Refer to this figure. The dc voltage on the collector, V_C, is

In a class B push-pull amplifier, crossover distortion occurs when both transistors are off and the input signal voltage must exceed V_BE before a transistor conducts.

An E-MOSFET can be operated with either positive or negative values of V_GS.

Refer to this figure. Increasing the values of the filter section resistors in this circuit will cause the f_c to

For an "on" transistor, the voltage V_BE should be in the neighborhood of 0.7 V.

The gate-to-source voltage V_GS of a(n) ________ must be larger than the threshold V_GS(Th) for the transistor to conduct.

For the typical transistor amplifier in the active region, V_CE is usually about % to % of V_CC.

Once the Zener diode is in the "on" state, V_Z is always ________ V_L.

The absence of the Si or Ge and V_D label on a diode denotes ________ notation.

As V_GS becomes negative, the slope of each curve in the characteristics becomes horizontal corresponding with an increasing resistance level.

In an n-channel enhancement-type MOSFET with a fixed value of V_T, the ________ the level of V_GS, the ________ the saturation level for V_DS.

The FET resistance in the ohmic region is ________ at V_P and ________ at the origin.