1475 + Mcqs in Electronic Devices Page 22 McqOptions

1051.	In an analog MOSFET switch, the input is applied to the gate and the output is taken from the source.
A.	True
B.	False
Answer» C.

Discussion

1052.	The common-drain configuration has extremely high input resistance.
A.	True
B.	False
Answer» B. False

Discussion

1053.	Digital MOSFET switches are used in the sample-and-hold circuit of an analog-to-digital converter.
A.	True
B.	False
Answer» C.

Discussion

1054.	The common-source configuration has extremely high input resistance.
A.	True
B.	False
Answer» B. False

Discussion

1055.	The common-drain amplifier is also called a source-follower.
A.	True
B.	False
Answer» B. False

Discussion

1056.	A load resistance connected to the output of an amplifier reduces the voltage gain.
A.	True
B.	False
Answer» B. False

Discussion

1057.	In a class D amplifier, the low-pass filter comes directly after the pulse-width modulator.
A.	True
B.	False
Answer» C.

Discussion

1058.	In the hybrid or Giacoletto model, which one of the following does rb include?
A.	Base spreading resistance
B.	Base contact
C.	Base bulk
D.	All of the above
Answer» E.

Discussion

1059.	If the parasitic capacitors were the only elements to determine the high cutoff frequency, the ________ frequency would be the determining factor.
A.	lowest
B.	highest
C.	lowest or highest
D.	None of the above
Answer» B. highest

Discussion

1060.	For any inverting amplifier, the impedance capacitance will be ________ by a Miller effect capacitance sensitive to the gain of the amplifier and the interelectrode capacitance.
A.	unaffected
B.	increased
C.	decreased
D.	None of the above
Answer» D. None of the above

Discussion

1061.	This circuit is an example of a ________.
A.	single-ended input
B.	double-ended (differential) input
C.	double-ended output
D.	common-mode operation
Answer» B. double-ended (differential) input

Discussion

1062.	This is an example of the output swing for a class ________ amplifier.
A.	A
B.	B
C.	AB
D.	C
E.	D
Answer» C. AB

Discussion

1063.	Refer to this figure. The dc voltage on the collector, VC, is
A.	5.4 V.
B.	6.6 V.
C.	12 V.
D.	0 V.
Answer» B. 6.6 V.

Discussion

1064.	What is the first phase of the dual-slope method of conversion?
A.	Connecting the analog voltage to the integrator for a fixed time
B.	Setting the counter to zero
C.	Connecting the integrator to a reference voltage
D.	All of the above
Answer» B. Setting the counter to zero

Discussion

1065.	The frequency distortion arising because of varying amplifier gain with frequency is considerably reduced in a negative-voltage feedback amplifier circuit.
A.	True
B.	False
Answer» B. False

Discussion

1066.	This is an equivalent circuit for the ________ diode.
A.	Schottky
B.	varicap
C.	tunnel
Answer» C. tunnel

Discussion

1067.	Refer to this figure. Which symbol is correct for a zener diode?
A.	a
B.	b
C.	c
D.	d
E.	e
Answer» C. c

Discussion

1068.	In a class B push-pull amplifier, crossover distortion occurs when both transistors are off and the input signal voltage must exceed VBE before a transistor conducts.
A.	True
B.	False
Answer» B. False

Discussion

1069.	An E-MOSFET can be operated with either positive or negative values of VGS.
A.	True
B.	False
Answer» C.

Discussion

1070.	The lower critical frequency is also known as the
A.	break frequency.
B.	cutoff frequency.
C.	corner frequency.
D.	all of the above
Answer» E.

Discussion

1071.	Refer to this figure. Increasing the values of the filter section resistors in this circuit will cause the fc to
A.	increase.
B.	decrease.
C.	remain the same.
D.	increase and then decrease.
Answer» C. remain the same.

Discussion

1072.	You can select the values for the emitter and collector resistors from the information that is provided for this circuit.
A.	True
B.	False
Answer» C.

Discussion

1073.	For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.
A.	True
B.	False
Answer» B. False

Discussion

1074.	In a class D amplifier, the output transistors are operated in a nonlinear mode.
A.	True
B.	False
Answer» B. False

Discussion

1075.	Generally, higher voltage gains can be achieved with bipolar amplifiers than with FET amplifiers.
A.	True
B.	False
Answer» B. False

Discussion

1076.	Bypassing a source resistor reduces the voltage gain.
A.	True
B.	False
Answer» C.

Discussion

1077.	The gate-to-source voltage VGS of a(n) ________ must be larger than the threshold VGS(Th) for the transistor to conduct.
A.	JFET
B.	D-type MOSFET
C.	E-type MOSFET
D.	None of the above
Answer» D. None of the above

Discussion

1078.	For the typical transistor amplifier in the active region, VCE is usually about ________ % to ________ % of VCC.
A.	0, 100
B.	25, 75
C.	45, 55
D.	None of the above
Answer» C. 45, 55

Discussion

1079.	For the dc analysis the network can be isolated from the indicated ac levels by replacing the capacitor with ________.
A.	an open circuit equivalent
B.	a short circuit equivalent
C.	a source voltage
D.	None of the above
Answer» B. a short circuit equivalent

Discussion

1080.	There is no phase inversion between the gate and the drain voltages.
A.	True
B.	False
Answer» C.

Discussion

1081.	The isolation between input and output circuits in the ac equivalent circuit is lost in a ________ configuration.
A.	common-gate
B.	common-source
C.	common-drain
D.	None of the above
Answer» B. common-source

Discussion

1082.	The ________ does not support Shockley's equation.
A.	JFET
B.	D-type MOSFET
C.	E-type MOSFET
D.	None of the above
Answer» D. None of the above

Discussion

1083.	Forward bias is the condition that allows current through a pn junction.
A.	True
B.	False
Answer» B. False

Discussion

1084.	An intrinsic crystal is one that contains a small amount of impurities.
A.	True
B.	False
Answer» C.

Discussion

1085.	N-type semiconductor material has very few free electrons.
A.	True
B.	False
Answer» C.

Discussion

1086.	The silicon material used in semiconductors is extremely pure with no additives.
A.	True
B.	False
Answer» C.

Discussion

1087.	The frequency in a VCO can be varied with a DC voltage.
A.	True
B.	False
Answer» B. False

Discussion

1088.	Oscillators operate on negative feedback.
A.	True
B.	False
Answer» C.

Discussion

1089.	The start-up gain of an oscillator must be greater than 1.
A.	True
B.	False
Answer» B. False

Discussion

1090.	In the astable mode, a 555 timer is connected as a free-running relaxation oscillator.
A.	True
B.	False
Answer» B. False

Discussion

1091.	The dc voltage level of a silicon diode is ________ its ideal model.
A.	smaller than
B.	larger than
C.	the same as
D.	None of the above
Answer» C. the same as

Discussion

1092.	As the load resistor increases, the slope of the dc load line and the levels of diode current ________.
A.	increase
B.	decrease
C.	remain unchanged
D.	are unpredictable
Answer» C. remain unchanged

Discussion

1093.	Once the Zener diode is in the "on" state, VZ is always ________ VL.
A.	larger than
B.	smaller than
C.	the same as
D.	None of the above
Answer» D. None of the above

Discussion

1094.	The absence of the Si or Ge and VD label on a diode denotes ________ notation.
A.	approximate model
B.	ideal model
C.	exact model
D.	None of the above
Answer» C. exact model

Discussion

1095.	The x-intercept of the load line with the characteristic curve is determined by the ________.
A.	load resistor
B.	diode
C.	source voltage and the load resistor
D.	source voltage
Answer» E.

Discussion

1096.	A germanium diode is approximated by ________ equivalent for voltages less than 0.3 V.
A.	a short circuit
B.	a series circuit
C.	a parallel circuit
D.	an open circuit
Answer» E.

Discussion

1097.	The output voltage of a center-tapped full-wave rectifier equals the secondary output voltage.
A.	True
B.	False
Answer» C.

Discussion

1098.	As VGS becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level.
A.	less, more
B.	more, less
C.	more, more
D.	None of the above
Answer» D. None of the above

Discussion

1099.	In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS.
A.	higher, more
B.	higher, less
C.	lower, lower
D.	None of the above
Answer» B. higher, less

Discussion

1100.	The FET resistance in the ohmic region is ________ at VP and ________ at the origin.
A.	smallest, largest
B.	largest, smallest
C.	larger, smaller
D.	smaller, larger
Answer» C. larger, smaller

Discussion

Explore topic-wise MCQs in Engineering.

In an analog MOSFET switch, the input is applied to the gate and the output is taken from the source.

The common-drain configuration has extremely high input resistance.

Digital MOSFET switches are used in the sample-and-hold circuit of an analog-to-digital converter.

The common-source configuration has extremely high input resistance.

The common-drain amplifier is also called a source-follower.

A load resistance connected to the output of an amplifier reduces the voltage gain.

In a class D amplifier, the low-pass filter comes directly after the pulse-width modulator.

In the hybrid or Giacoletto model, which one of the following does rb include?

If the parasitic capacitors were the only elements to determine the high cutoff frequency, the ________ frequency would be the determining factor.

For any inverting amplifier, the impedance capacitance will be ________ by a Miller effect capacitance sensitive to the gain of the amplifier and the interelectrode capacitance.

This circuit is an example of a ________.

This is an example of the output swing for a class ________ amplifier.

Refer to this figure. The dc voltage on the collector, VC, is

What is the first phase of the dual-slope method of conversion?

The frequency distortion arising because of varying amplifier gain with frequency is considerably reduced in a negative-voltage feedback amplifier circuit.

This is an equivalent circuit for the ________ diode.

Refer to this figure. Which symbol is correct for a zener diode?

In a class B push-pull amplifier, crossover distortion occurs when both transistors are off and the input signal voltage must exceed VBE before a transistor conducts.

An E-MOSFET can be operated with either positive or negative values of VGS.

The lower critical frequency is also known as the

Refer to this figure. Increasing the values of the filter section resistors in this circuit will cause the fc to

You can select the values for the emitter and collector resistors from the information that is provided for this circuit.

For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.

In a class D amplifier, the output transistors are operated in a nonlinear mode.

Generally, higher voltage gains can be achieved with bipolar amplifiers than with FET amplifiers.

Bypassing a source resistor reduces the voltage gain.

The gate-to-source voltage VGS of a(n) ________ must be larger than the threshold VGS(Th) for the transistor to conduct.

For the typical transistor amplifier in the active region, VCE is usually about ________ % to ________ % of VCC.

For the dc analysis the network can be isolated from the indicated ac levels by replacing the capacitor with ________.

There is no phase inversion between the gate and the drain voltages.

The isolation between input and output circuits in the ac equivalent circuit is lost in a ________ configuration.

The ________ does not support Shockley's equation.

Forward bias is the condition that allows current through a pn junction.

An intrinsic crystal is one that contains a small amount of impurities.

N-type semiconductor material has very few free electrons.

The silicon material used in semiconductors is extremely pure with no additives.

The frequency in a VCO can be varied with a DC voltage.

Oscillators operate on negative feedback.

The start-up gain of an oscillator must be greater than 1.

In the astable mode, a 555 timer is connected as a free-running relaxation oscillator.

The dc voltage level of a silicon diode is ________ its ideal model.

As the load resistor increases, the slope of the dc load line and the levels of diode current ________.

Once the Zener diode is in the "on" state, VZ is always ________ VL.

The absence of the Si or Ge and VD label on a diode denotes ________ notation.

The x-intercept of the load line with the characteristic curve is determined by the ________.

A germanium diode is approximated by ________ equivalent for voltages less than 0.3 V.

The output voltage of a center-tapped full-wave rectifier equals the secondary output voltage.

As VGS becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level.

In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS.

The FET resistance in the ohmic region is ________ at VP and ________ at the origin.

For the typical transistor amplifier in the active region, VCE is usually about % to % of VCC.

As VGS becomes negative, the slope of each curve in the characteristics becomes horizontal corresponding with an increasing resistance level.

In an n-channel enhancement-type MOSFET with a fixed value of VT, the the level of VGS, the the saturation level for VDS.

The FET resistance in the ohmic region is at VP and at the origin.