MCQOPTIONS
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MCQOPTIONS
This section includes 1475 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Which of the following ratings is true? |
| A. | Si diodes have higher PIV and narrower temperature ranges than Ge diodes. |
| B. | Si diodes have higher PIV and wider temperature ranges than Ge diodes. |
| C. | Si diodes have lower PIV and narrower temperature ranges than Ge diodes. |
| D. | Si diodes have lower PIV and wider temperature ranges than Ge diodes. |
| Answer» C. Si diodes have lower PIV and narrower temperature ranges than Ge diodes. | |
| 2. |
The ideal diode is a(n) ________ circuit in the region of nonconduction. |
| A. | open |
| B. | short |
| Answer» B. short | |
| 3. |
Which capacitance dominates in the forward-bias region? |
| A. | Diffusion |
| B. | Transition |
| C. | Depletion |
| D. | None of the above |
| Answer» B. Transition | |
| 4. |
In what state is a silicon diode if the voltage drop across it is about 0.7 V? |
| A. | No bias |
| B. | Forward bias |
| C. | Reverse bias |
| D. | Zener region |
| Answer» C. Reverse bias | |
| 5. |
In general, LEDs operate at voltage levels from ________ V to ________ V. |
| A. | 1.0, 3.0 |
| B. | 1.7, 3.3 |
| C. | 0.5, 4.0 |
| D. | None of the above |
| Answer» C. 0.5, 4.0 | |
| 6. |
Determine the nominal voltage for the Zener diode at a temperature of 120 C if the nominal voltage is 5.1 volts at 25 C and the temperature coefficient is 0.05%/ C. |
| A. | 4.6 V |
| B. | 4.86 V |
| C. | 5.1 V |
| D. | 5.34 V |
| Answer» E. | |
| 7. |
What is the maximum power rating for LEDs? |
| A. | 150 mW |
| B. | 500 mW |
| C. | 1 W |
| D. | 10 W |
| Answer» B. 500 mW | |
| 8. |
The ________ diode model is employed most frequently in the analysis of electronic systems. |
| A. | ideal device |
| B. | simplified |
| C. | piecewise-linear |
| Answer» C. piecewise-linear | |
| 9. |
In which of the following is the light intensity measured? |
| A. | Candela |
| B. | Efficacy |
| C. | Flux |
| D. | Illumination |
| Answer» B. Efficacy | |
| 10. |
In which of the following color(s) is (are) LEDs presently available? |
| A. | Yellow |
| B. | White |
| C. | Orange |
| D. | All of the above |
| Answer» E. | |
| 11. |
What is the range of the operating voltage level for LEDs? |
| A. | 5 12 mV |
| B. | 1.7 3.3 V |
| C. | 5 12 V |
| D. | 20 25 V |
| Answer» C. 5 12 V | |
| 12. |
At what kind of operating frequency diffusion or transition is a capacitor represented in parallel with the ideal diode? |
| A. | Low frequency |
| B. | Moderate frequency |
| C. | Mid frequency |
| D. | Very high frequency |
| Answer» E. | |
| 13. |
How many orbiting electrons does the germanium atom have? |
| A. | 4 |
| B. | 14 |
| C. | 32 |
| D. | 41 |
| Answer» D. 41 | |
| 14. |
How many terminals does a diode have? |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» C. 3 | |
| 15. |
What unit is used to represent the level of a diode forward current IF? |
| A. | pA |
| B. | nA |
| C. | <img src="/_files/images/electronic-devices-and-circuit-theory/mu.gif"> |
| D. | A |
| E. | mA |
| Answer» E. mA | |
| 16. |
The diffused impurities with ________ valence electrons are called donor atoms. |
| A. | 4 |
| B. | 3 |
| C. | 5 |
| D. | 0 |
| Answer» D. 0 | |
| 17. |
Which of the following elements is most frequently used for doping pure Ge or Si? |
| A. | Boron |
| B. | Gallium |
| C. | Indium |
| D. | All of the above |
| Answer» E. | |
| 18. |
Calculate the temperature coefficient in %/ C of a 10-V nominal Zener diode at 25 C if the nominal voltage is 10.2 V at 100 C. |
| A. | 0.0238 |
| B. | 0.0251 |
| C. | 0.0267 |
| D. | 0.0321 |
| Answer» D. 0.0321 | |
| 19. |
Which of the following is an atom composed of? |
| A. | Electrons |
| B. | Protons |
| C. | Neutrons |
| D. | All of the above |
| Answer» E. | |
| 20. |
The condition of a semiconductor diode can be determined quickly using a ________. |
| A. | DDM |
| B. | VOM |
| C. | curve tracer |
| D. | Any of the above |
| Answer» E. | |
| 21. |
How many valence electrons does a silicon atom have? |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» E. | |
| 22. |
What is the state of an ideal diode in the region of nonconduction? |
| A. | An open circuit |
| B. | A short circuit |
| C. | Unpredictable |
| D. | Undefined |
| Answer» B. A short circuit | |
| 23. |
Calculate the power dissipation of a diode having ID = 40 mA. |
| A. | 28 mW |
| B. | 28 W |
| C. | 280 mW |
| D. | Undefined |
| Answer» B. 28 W | |
| 24. |
Determining rd to a high degree of accuracy from a characteristic curve is very accurate. |
| A. | True |
| B. | False |
| Answer» C. | |
| 25. |
The diode ________. |
| A. | is the simplest of semiconductor devices |
| B. | has characteristics that closely match those of a simple switch |
| C. | is a two-terminal device |
| D. | All of the above |
| Answer» E. | |
| 26. |
It is not uncommon for a germanium diode with an Is in the order of 1 2 A at 25 C to have leakage current of 0.1 mA at a temperature of 100 C. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 27. |
Which of the following devices can check the condition of a semiconductor diode? |
| A. | Digital display meter (DDM) |
| B. | Multimeter |
| C. | Curve tracer |
| D. | All of the above |
| Answer» E. | |
| 28. |
What does a high resistance reading in both forward- and reverse-bias directions indicate? |
| A. | A good diode |
| B. | An open diode |
| C. | A shorted diode |
| D. | A defective ohmmeter |
| Answer» C. A shorted diode | |
| 29. |
What is the value of the transition capacitance for a silicon diode when VD = 0? (Choose the best answer.) |
| A. | 1 pF |
| B. | 3 pF |
| C. | 5 pF |
| D. | 10 pF |
| Answer» C. 5 pF | |
| 30. |
Refer to this figure. If the value of R1 decreases, the voltage gain will ________ and the input impedance will ________. |
| A. | increase, increase |
| B. | increase, decrease |
| C. | decrease, decrease |
| D. | decrease, increase |
| Answer» C. decrease, decrease | |
| 31. |
Refer to this figure. The purpose of R3 is |
| A. | for bias current compensation. |
| B. | for input offset voltage compensation. |
| C. | to set input impedance. |
| D. | to set input impedance and voltage gain. |
| Answer» B. for input offset voltage compensation. | |
| 32. |
A voltage-follower amplifier comes to you for service. You find the voltage gain to be 5.5 and the input impedance 22 k. The probable fault in this amplifier, if any, is |
| A. | the gain is too low for this type of amplifier. |
| B. | the input impedance is too high for this amplifier. |
| C. | nothing is wrong. The trouble must be somewhere else. |
| D. | none of these. |
| Answer» E. | |
| 33. |
For an op-amp having a slew rate SR = 5 V/ms, what is the maximum closed-loop voltage gain that can be used when the input signal varies by 0.2 V in 10 ms? |
| A. | 150 |
| B. | 200 |
| C. | 250 |
| D. | 300 |
| Answer» D. 300 | |
| 34. |
Referring to this figure, obtain gm for ID = 6 mA. |
| A. | 2.83 mS |
| B. | 3.00 mS |
| C. | 3.25 mS |
| D. | 3.46 mS |
| Answer» E. | |
| 35. |
The more horizontal the characteristic curves on the drain characteristics, the ________ the output impedance. |
| A. | less |
| B. | same |
| C. | greater |
| Answer» D. | |
| 36. |
Refer to this figure. If ID = 4 mA, find the value of VGS. |
| A. | 10.8 V |
| B. | 6 V |
| C. | 0.7 V |
| D. | 6 V |
| Answer» E. | |
| 37. |
Which FET amplifier(s) has (have) a phase inversion between input and output signals? |
| A. | common-gate |
| B. | common-drain |
| C. | common-source |
| D. | all of the above |
| Answer» D. all of the above | |
| 38. |
A BJT is a ________-controlled device. |
| A. | current |
| B. | voltage |
| Answer» B. voltage | |
| 39. |
Which type of FETs can operate with a gate-to-source Q-point value of 0 V? |
| A. | JFET |
| B. | E-MOSFET |
| C. | D-MOSFET |
| Answer» D. | |
| 40. |
Refer to this figure. For midpoint biasing, ID would be |
| A. | 10 mA. |
| B. | 7.5 mA. |
| C. | 5 mA. |
| D. | 2.5 mA. |
| Answer» D. 2.5 mA. | |
| 41. |
Class D amplifiers differ from all other classes of amplifiers because |
| A. | the output transistors are operated as switches. |
| B. | of their very low input capacitance. |
| C. | of their high-frequency response capabilities. |
| D. | they employ dual MOSFETs. |
| Answer» B. of their very low input capacitance. | |
| 42. |
Refer to this figure. If R7 were to decrease in value, Vout would |
| A. | increase. |
| B. | decrease. |
| C. | remain the same. |
| D. | distort. |
| Answer» C. remain the same. | |
| 43. |
Where do you get the level of gm and rd for an FET transistor? |
| A. | from the dc biasing arrangement |
| B. | from the specification sheet |
| C. | from the characteristics |
| D. | All of the above |
| Answer» E. | |
| 44. |
The class D amplifier uses what type of transistors? |
| A. | JFETs |
| B. | BJTs |
| C. | MOSFETs |
| D. | any of the above |
| Answer» D. any of the above | |
| 45. |
What is (are) the function(s) of the coupling capacitors C1 and C2 in an FET circuit? |
| A. | to create an open circuit for dc analysis |
| B. | to isolate the dc biasing arrangement from the applied signal and load |
| C. | to create a short-circuit equivalent for ac analysis |
| D. | All of the above |
| Answer» E. | |
| 46. |
An FET is a ________-controlled device. |
| A. | current |
| B. | voltage |
| Answer» C. | |
| 47. |
Use the following equation to calculate gm for a JFET having IDSS = 10 mA, VP = 5 V, and VGSQ = 2.5 V. |
| A. | 2 mS |
| B. | 3 mS |
| C. | 4 mS |
| D. | 5 mS |
| Answer» B. 3 mS | |
| 48. |
Refer to this figure. If Vin = 20 mV p-p what is the output voltage? |
| A. | 176 mV p-p |
| B. | 88 mV p-p |
| C. | 48 mV p-p |
| D. | 24 mV p-p |
| Answer» B. 88 mV p-p | |
| 49. |
Referring to the following figure, calculate gm for VGSQ = 1.25 V. |
| A. | 2 mS |
| B. | 2.5 mS |
| C. | 2.75 mS |
| D. | 3.25 mS |
| Answer» D. 3.25 mS | |
| 50. |
Referring to this figure, calculate Av if rd = 19 k. |
| A. | 2.85 |
| B. | 3.26 |
| C. | 2.95 |
| D. | 3.21 |
| Answer» D. 3.21 | |