MCQOPTIONS
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MCQOPTIONS
This section includes 1475 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1001. |
What is the maximum peak voltage for tunnel diodes? |
| A. | 50 mV |
| B. | 100 mV |
| C. | 250 mV |
| D. | 600 mV |
| Answer» E. | |
| 1002. |
The majority of power diodes are constructed using ________. |
| A. | molybdenum |
| B. | platinum |
| C. | tungsten |
| D. | silicon |
| Answer» E. | |
| 1003. |
Which of the following is (are) diodes? |
| A. | Schottky |
| B. | Varactor |
| C. | Tunnel |
| D. | All of the above |
| Answer» E. | |
| 1004. |
What is the limit of peak current IP in tunnel diodes? |
| A. | A few microamperes to several hundred amperes |
| B. | A few microamperes to several amperes |
| C. | A few microamperes to several milliamperes |
| D. | A few microamperes to several hundred microamperes |
| Answer» B. A few microamperes to several amperes | |
| 1005. |
Calculate VDSQ. |
| A. | 1.0 V |
| B. | 1.50 V |
| C. | 2.56 V |
| D. | 3.58 V |
| Answer» E. | |
| 1006. |
On the universal JFET bias curve, the vertical scale labeled ________ can, in itself, be used to find the solution to ________ configurations. |
| A. | m, fixed-bias |
| B. | M, fixed-bias |
| C. | M, voltage-bias |
| D. | m, voltage-bias |
| Answer» B. M, fixed-bias | |
| 1007. |
The input controlling variable for a(n) ________ is a current level and a voltage level for a(n) ________. |
| A. | BJT, FET |
| B. | FET, BJT |
| C. | FET, FET |
| D. | BJT, BJT |
| Answer» B. FET, BJT | |
| 1008. |
The self-bias configuration eliminates the need for two dc supplies. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 1009. |
Ge and Si have a(n) ________ coefficient in forward bias. |
| A. | positive temperature |
| B. | negative temperature |
| C. | absolute temperature |
| D. | temperature free |
| Answer» C. absolute temperature | |
| 1010. |
Through proper design, a ________ can be introduced that will affect the biasing level of a voltage-controlled JFET resistor. |
| A. | photodiode |
| B. | thermistor |
| C. | laser diode |
| D. | Zener diode |
| Answer» C. laser diode | |
| 1011. |
Generally the value of ac resistance is ________ the value of dc resistance at the same operating point. |
| A. | smaller than |
| B. | larger than |
| C. | the same as |
| D. | unrelated to |
| Answer» B. larger than | |
| 1012. |
The forward characteristics curve of a diode grows in ________ form. |
| A. | linear |
| B. | exponential |
| C. | logarithmic |
| D. | sinusoidal |
| Answer» C. logarithmic | |
| 1013. |
Which of the following is a false statement regarding the dc load line when comparing self-bias and voltage-divider configurations? |
| A. | Both are linear lines. |
| B. | Both cross the origin. |
| C. | Both intersect the transfer characteristics. |
| D. | Both are obtained by writing Kirchhoff's voltage law (KVL) at the input side loop. |
| Answer» C. Both intersect the transfer characteristics. | |
| 1014. |
An increase in temperature of a semiconductor can result in a ________ in the number of free electrons in the material. |
| A. | substantial increase |
| B. | substantial decrease |
| C. | slight decrease |
| D. | no change |
| Answer» B. substantial decrease | |
| 1015. |
In the atomic lattice the ________ and ________ form the nucleus. |
| A. | electrons, neutrons |
| B. | electrons, protons |
| C. | neutrons, protons |
| D. | None of the above |
| Answer» D. None of the above | |
| 1016. |
Calculate the value of VDS. |
| A. | 3 V |
| B. | 3 V |
| C. | 4 V |
| D. | 4 V |
| Answer» B. 3 V | |
| 1017. |
The bandwidth of a band-pass filter is the sum of the two cutoff frequencies. |
| A. | True |
| B. | False |
| Answer» C. | |
| 1018. |
A Sallen-Key filter is a second-order filter. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 1019. |
Filters with Bessel characteristics are used for filtering pulse waveforms. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 1020. |
The bandwidth of a practical high-pass filter is infinite. |
| A. | True |
| B. | False |
| Answer» C. | |
| 1021. |
A band-pass filter can be created by cascading a high-pass filter and a low-pass filter. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 1022. |
________ is the unit for the slew rate, SR. |
| A. | V/ms |
| B. | ms/V |
| C. | V |
| D. | V/s |
| Answer» B. ms/V | |
| 1023. |
An operational amplifier has a ________ input impedance and a ________ output impedance. |
| A. | high, low |
| B. | high, high |
| C. | low, low |
| D. | low, high |
| Answer» B. high, high | |
| 1024. |
Which of the following semiconductor materials is (are) used in the manufacturing of tunnel diodes? |
| A. | Germanium |
| B. | Gallium |
| C. | Both germanium and gallium arsenide |
| D. | Silicon |
| Answer» D. Silicon | |
| 1025. |
The varicap diode has a transition capacitance sensitive to the applied reverse-bias potential that is a maximum at zero volts and decreases ________ with increasing reverse-bias potentials. |
| A. | logarithmically |
| B. | parabolically |
| C. | exponentially |
| Answer» D. | |
| 1026. |
For a 50-A unit, the PIV of the Schottky is about ________ compared to 150 V for the p-n junction variety. |
| A. | 25 |
| B. | 50 |
| C. | 75 |
| D. | 100 |
| Answer» C. 75 | |
| 1027. |
Which of the following metals is (are) used in the fabrication of Schottky diodes? |
| A. | Molybdenum |
| B. | Platinum |
| C. | Tungsten |
| D. | All of the above |
| Answer» E. | |
| 1028. |
Calculate the value of VDSQ. |
| A. | 0 V |
| B. | 20 V |
| C. | 30 V |
| D. | 40 V |
| Answer» E. | |
| 1029. |
What is the approximate current level in the gate of an FET in dc analysis? |
| A. | 0 A |
| B. | 0.7 mA |
| C. | 0.3 mA |
| D. | Undefined |
| Answer» B. 0.7 mA | |
| 1030. |
Calculate VD. |
| A. | 23.0 V |
| B. | 17.0 V |
| C. | 4.6 V |
| D. | 12.4 V |
| Answer» C. 4.6 V | |
| 1031. |
Calculate VCE. |
| A. | 0 V |
| B. | 2 V |
| C. | 3 V |
| D. | 5.34 V |
| Answer» E. | |
| 1032. |
Calculate VDS. |
| A. | 0 V |
| B. | 6 V |
| C. | 16 V |
| D. | 11 V |
| Answer» B. 6 V | |
| 1033. |
For the noninverting amplifier, one of the most important advantages associated with using a JFET for control is the fact that it is ________ rather than ________ control. |
| A. | dc, ac |
| B. | ac, dc |
| Answer» B. ac, dc | |
| 1034. |
What are the voltages across RD and RS? |
| A. | 0 V, 0 V |
| B. | 5 V, 5 V |
| C. | 10 V, 10 V |
| D. | 20 V, 20 V |
| Answer» B. 5 V, 5 V | |
| 1035. |
Depletion-type MOSFETs do not permit operating points with positive values of VGS and levels of ID that exceed IDSS. |
| A. | True |
| B. | False |
| Answer» C. | |
| 1036. |
An active filter uses capacitors and inductors in the feedback network. |
| A. | True |
| B. | False |
| Answer» C. | |
| 1037. |
Amplitude modulation is a ________ process. |
| A. | multiplication |
| B. | division |
| C. | sum/difference |
| Answer» B. division | |
| 1038. |
For the FET, the relationship between the input and output quantities is ________ due to the ________ term in Shockley's equation. |
| A. | nonlinear, cubed |
| B. | linear, proportional |
| C. | nonlinear, squared |
| Answer» D. | |
| 1039. |
Which of the following areas is (are) an application of infrared-emitting diodes? |
| A. | Intrusion alarms |
| B. | Shaft encoders |
| C. | Paper-tape readers |
| D. | All of the above |
| Answer» E. | |
| 1040. |
Schottky diodes are very effective at frequencies approaching ________. |
| A. | 20 GHz |
| B. | 10 MHz |
| C. | 100 MHz |
| D. | 1 MHz |
| Answer» B. 10 MHz | |
| 1041. |
What is the voltage drop across Schottky diodes? |
| A. | 0 V to 0.2 V |
| B. | 0.7 V to 0.8 V |
| C. | 0.8 V to 1.0 V |
| D. | 1.0 V to 1.5 V |
| Answer» B. 0.7 V to 0.8 V | |
| 1042. |
In which region is the operating point stable in tunnel diodes? |
| A. | Negative-resistance |
| B. | Positive-resistance |
| C. | Both negative- and positive-resistance |
| D. | Neither negative- nor positive-resistance |
| Answer» C. Both negative- and positive-resistance | |
| 1043. |
What is the logic function of this circuit? |
| A. | Positive logic AND gate |
| B. | Positive logic OR gate |
| C. | Negative logic AND gate |
| D. | Negative logic OR gate |
| Answer» B. Positive logic OR gate | |
| 1044. |
In n-type material the ________ is called the majority carrier. |
| A. | electron |
| B. | hole |
| C. | proton |
| D. | neutron |
| Answer» B. hole | |
| 1045. |
The output frequency of a full-wave rectifier is ________ the input frequency. |
| A. | one-half |
| B. | equal to |
| C. | twice |
| D. | one-quarter |
| Answer» D. one-quarter | |
| 1046. |
What best describes the circuit? |
| A. | Full-wave rectifier |
| B. | Half-wave rectifier |
| C. | Clipper |
| D. | Clamper |
| Answer» C. Clipper | |
| 1047. |
There is a 180 phase inversion between the gate and source voltages. |
| A. | True |
| B. | False |
| Answer» C. | |
| 1048. |
Calculate the value of VDS. |
| A. | 0 V |
| B. | 0.35 V |
| C. | 3.8 V |
| D. | 33.5 V |
| Answer» D. 33.5 V | |
| 1049. |
Calculate the value of VDS. |
| A. | 0 V |
| B. | 8 V |
| C. | 4.75 V |
| D. | 16 V |
| Answer» E. | |
| 1050. |
The common-gate configuration has extremely high input resistance. |
| A. | True |
| B. | False |
| Answer» C. | |