MCQOPTIONS
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This section includes 5 Mcqs, each offering curated multiple-choice questions to sharpen your Manufacturing Processes knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Plasma etching provides poor thickness control. |
| A. | True |
| B. | False |
| Answer» C. | |
| 2. |
In plasma etch, the chemical etchant is introduced in the gas phase. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 3. |
In dry etching ______________ are used for removing material. |
| A. | solvent etchants |
| B. | gaseous etchants |
| C. | carbide tools |
| D. | powder etchants |
| Answer» C. carbide tools | |
| 4. |
Silicon dioxide etch rate at 90 C using 30 % KOH is approximately ______________ |
| A. | 1 m/hr |
| B. | 5 m/hr |
| C. | 10 m/hr |
| D. | 100 m/hr |
| Answer» B. 5 m/hr | |
| 5. |
Etching process should be selective to the material that has to be removed. |
| A. | True |
| B. | False |
| Answer» B. False | |