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Silicon dioxide etch rate at 90 C using 30 % KOH...
1.
Silicon dioxide etch rate at 90 C using 30 % KOH is approximately ______________
A.
1 m/hr
B.
5 m/hr
C.
10 m/hr
D.
100 m/hr
Answer» B. 5 m/hr
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Related MCQs
Plasma etching provides poor thickness control.
In plasma etch, the chemical etchant is introduced in the gas phase.
In dry etching ______________ are used for removing material.
Silicon dioxide etch rate at 90 C using 30 % KOH is approximately ______________
Etching process should be selective to the material that has to be removed.
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