MCQOPTIONS
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MCQOPTIONS
This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Collector current (Ic) reaches zero when |
| A. | Vce = Vt ln (Isc/I) |
| B. | Vt = Vce ln (Isc/I)c) Vce = Vt ln (I/Is |
| C. | reaches zero whena) Vce = Vt ln (Isc/I)b) Vt = Vce ln (Isc/I)c) Vce = Vt ln (I/Isc) |
| D. | Vce = Vt ln (Isc + I/I) |
| Answer» B. Vt = Vce ln (Isc/I)c) Vce = Vt ln (I/Is | |
| 2. |
For the BJT to operate in active mode Collector-Base junction must be |
| A. | Heavily doped |
| B. | Must reversed bias |
| C. | Must be forward bias |
| D. | Lightly doped |
| Answer» C. Must be forward bias | |
| 3. |
The Early Effect is also called as |
| A. | Base-width modulation effect |
| B. | Base-width amplification effect |
| C. | Both of the mentioned |
| D. | None of the mentioned |
| Answer» B. Base-width amplification effect | |
| 4. |
The correct relation between the transistor parameters α and ß are related by |
| A. | ß = 1 – α/α |
| B. | ß = 1 + α/α |
| C. | α = ß + 1/ß |
| D. | α = ß/ß + 1 |
| Answer» E. | |
| 5. |
FOR_THE_BJT_TO_OPERATE_IN_ACTIVE_MODE_COLLECTOR-BASE_JUNCTION_MUST_BE?$ |
| A. | Heavily doped |
| B. | Must reversed bias |
| C. | Must be forward bias |
| D. | Lightly doped |
| Answer» C. Must be forward bias | |
| 6. |
Collector_current_(Ic)_reaches_zero_when$ |
| A. | Vce = Vt ln (Isc/I) |
| B. | Vt = Vce ln (Isc/I) |
| C. | Vce = Vt ln (I/Isc) |
| D. | Vce = Vt ln (Isc + I/I) |
| Answer» B. Vt = Vce ln (Isc/I) | |
| 7. |
The Early Effect is also called a? |
| A. | Base-width modulation effect |
| B. | Base-width amplification effect |
| C. | Both of the mentioned |
| D. | None of the mentioned |
| Answer» B. Base-width amplification effect | |
| 8. |
The correct relation between the emitter current Ie and the base current Ib is given by |
| A. | Ib = (1 + α) Ie |
| B. | Ib = (α – 1) Ie |
| C. | Ie = (1 – ß) Ib |
| D. | Ie = (1 + ß) Ib |
| Answer» E. | |
| 9. |
The value of the thermal voltage at room temperature can be approximated as |
| A. | 25 mV |
| B. | 30 mV |
| C. | 35 mV |
| D. | 40 mV |
| Answer» B. 30 mV | |
| 10. |
The correct expression relating the emitter current Ie to the collector current Ic is |
| A. | Ie = α Ic |
| B. | Ic = α Ic |
| C. | Ie = ß Ic |
| D. | Ic = ß Ic |
| Answer» C. Ie = ‚Äö√†√∂‚àö¬∫ Ic | |
| 11. |
The correct relation between the transistor parameters α and ß are related by$ |
| A. | ß = 1 – α/α |
| B. | ß = 1 + α/α |
| C. | α = ß + 1/ß |
| D. | α = ß/ß + 1 |
| Answer» E. | |
| 12. |
The magnitude of the thermal voltage is given by |
| A. | k/Tq |
| B. | kT/q |
| C. | q/Kt |
| D. | Tk/q |
| Answer» C. q/Kt | |
| 13. |
The curve between the collector current and the saturation is |
| A. | A straight line inclined to the axes |
| B. | A straight line parallel to the x-axis |
| C. | A straight line parallel to the y-axis |
| D. | An exponential curve |
| Answer» B. A straight line parallel to the x-axis | |
| 14. |
The curve between the collector current versus the potential difference between the base and emitter is |
| A. | A straight line inclined to the axes |
| B. | A straight line parallel to the x-axis |
| C. | An exponentially varying curve |
| D. | A parabolic curve |
| Answer» D. A parabolic curve | |