Explore topic-wise MCQs in Electronic Devices Circuits.

This section includes 15 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.

A transistor is connected in CB configuration. The emitter voltage is changed by 200mV, the emitter by 5mA. During this transition the collector base voltage is kept constant. What is the input dynamic resistance?

A. 30Ω
B. 60Ω
C. 40Ω
D. 50Ω
Answer» D. 50Ω
2.

The change in collector emitter voltage from 6V to 9V causes increase in collector current from 6mA to 6.3mA. Determine the dynamic output resistance.

A. 20kΩ
B. 10kΩ
C. 50kΩ
D. 60kΩ
Answer» C. 50kΩ
3.

The collector current is 2.945A and α=0.98. The leakage current is 2µA. What is the emitter current and base current?

A. 3mA and 55µA
B. 2.945mA and 55µA
C. 3.64mA and 33µA
D. 5.89mA and 65µA
Answer» B. 2.945mA and 55µA
4.

A small signal source V(t)=Acos20t+Bsin10000t, is applied to a transistor amplifier as shown. The transistor has β=150 and hie=3KΩ. What will be the VO?

A. 1500(Acos20t+Bsin10000t)
B. -150(Acos20t+Bsin10000t)
C. -1500Bsin10000t
D. -150Bsin10000t
Answer» E.
5.

The voltage gain of given circuit below is_________

A. 100
B. 20
C. 10
D. 30
Answer» D. 30
6.

For an NPN transistor connected as shown in below, VBE=0.7V. Give that reverse saturation current of junction at room temperature is 10-13A, the emitter current is_________

A. 30mA
B. 39mA
C. 29mA
D. 49mA
Answer» E.
7.

A common emitter transistor amplifier has a collector current of 10mA, when its base current is 25µA at the room, temperature. What is input resistance?

A. 3kΩ
B. 5kΩ
C. 1kΩ
D. 7kΩ
Answer» D. 7kΩ
8.

For the amplifier circuit of fig. The transistor has β of 800. The mid band voltage gain VO/VI of the circuit will be_________

A. 0
B. <1
C. =1
D. 800
Answer» D. 800
9.

THE_COLLECTOR_CURRENT_IS_2.945A_AND_‚ÂÀ√≠¬¨¬±=0.98._THE_LEAKAGE_CURRENT_IS_2¬¨¬®¬¨¬µA._WHAT_IS_THE_EMITTER_CURRENT_AND_BASE_CURRENT??$#

A. 3mA and 55µA
B. 2.945mA and 55µA
C. 3.64mA and 33µA
D. 5.89mA and 65µA
Answer» B. 2.945mA and 55¬¨¬®¬¨¬µA
10.

A transistor is connected in CB configuration. The emitter voltage is changed by 200mV, the emitter by 5mA. During this transition the collector base voltage is kept constant. What is the input dynamic resistance?$

A. 30Ω
B. 60Ω
C. 40Ω
D. 50Ω
Answer» D. 50‚Äö√Ñ√∂‚àö√´¬¨‚àÇ
11.

The_change_in_collector_emitter_voltage_from_6V_to_9V_causes_increase_in_collector_current_from_6mA_to_6.3mA._Determine_the_dynamic_output_resistance.$

A. 20kΩ
B. 10kΩ
C. 50kΩ
D. 60kΩ
Answer» C. 50k‚Äö√Ñ√∂‚àö√´¬¨‚àÇ
12.

Which of the following statements are correct for basic transistor configurations?

A. CB Amplifiers has low input impedance and low current gain
B. CC Amplifiers has low input impedance and high current gain
C. CE Amplifiers has very poor voltage gain but very high input impedance
D. The current gain of CB Amplifier is higher than the current gain of CC Amplifiers
Answer» B. CC Amplifiers has low input impedance and high current gain
13.

A common emitter transistor amplifier has a collector current of 10mA, when its base current is 25µA at the room, temperature. What is input resistance?$

A. 3kΩ
B. 5kΩ
C. 1kΩ
D. 7kΩ
Answer» D. 7k‚Äö√Ñ√∂‚àö√´¬¨‚àÇ
14.

In a bipolar transistor at room temperature, the emitter current is doubled the voltage across its base emitter junction_________

A. doubles
B. halves
C. increase by about 20mV
D. decreases by about 20mV
Answer» D. decreases by about 20mV
15.

The current gain of BJT is_________

A. g<sub>m</sub>r<sub>o</sub>
B. g<sub>m</sub>/r<sub>o</sub>
C. g<sub>m</sub>r<sub>i</sub>
D. g<sub>m</sub>/r<sub>i</sub>
Answer» D. g<sub>m</sub>/r<sub>i</sub>