The current gain of BJT is_________

1.	The current gain of BJT is_________
A.	g<sub>m</sub>r<sub>o</sub>
B.	g<sub>m</sub>/r<sub>o</sub>
C.	g<sub>m</sub>r<sub>i</sub>
D.	g<sub>m</sub>/r<sub>i</sub>
Answer» D. g<sub>m</sub>/r<sub>i</sub>

Discussion

No Comment Found

Related MCQs

A transistor is connected in CB configuration. The emitter voltage is changed by 200mV, the emitter by 5mA. During this transition the collector base voltage is kept constant. What is the input dynamic resistance?
The change in collector emitter voltage from 6V to 9V causes increase in collector current from 6mA to 6.3mA. Determine the dynamic output resistance.
The collector current is 2.945A and α=0.98. The leakage current is 2µA. What is the emitter current and base current?
A small signal source V(t)=Acos20t+Bsin10000t, is applied to a transistor amplifier as shown. The transistor has β=150 and hie=3KΩ. What will be the VO?
The voltage gain of given circuit below is_________
For an NPN transistor connected as shown in below, VBE=0.7V. Give that reverse saturation current of junction at room temperature is 10-13A, the emitter current is_________
A common emitter transistor amplifier has a collector current of 10mA, when its base current is 25µA at the room, temperature. What is input resistance?
For the amplifier circuit of fig. The transistor has β of 800. The mid band voltage gain VO/VI of the circuit will be_________
THE_COLLECTOR_CURRENT_IS_2.945A_AND_‚ÂÀ√≠¬¨¬±=0.98._THE_LEAKAGE_CURRENT_IS_2¬¨¬®¬¨¬µA._WHAT_IS_THE_EMITTER_CURRENT_AND_BASE_CURRENT??$#
A transistor is connected in CB configuration. The emitter voltage is changed by 200mV, the emitter by 5mA. During this transition the collector base voltage is kept constant. What is the input dynamic resistance?$

The current gain of BJT is_________

Discussion

No Comment Found

Related MCQs

Reply to Comment