Explore topic-wise MCQs in Linear Integrated Circuit.

This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Linear Integrated Circuit knowledge and support exam preparation. Choose a topic below to get started.

1.

IN_CRZOCHRALSKI_CRYSTAL_GROWTH_PROCESS,_THE_MATERIALS_ARE_HEATED_UP_TO?$

A. 950<sup>o</sup>c
B. 1000 <sup>o</sup>c
C. 1420<sup>o</sup>c
D. 1200<sup>o</sup>c
Answer» D. 1200<sup>o</sup>c
Discussion
2.

If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness?$

A. 16-32 mils
B. 23-40 mils
C. 8-12 mils
D. None of the mentioned
Answer» B. 23-40 mils
Discussion
3.

How_to_obtain_silicon_ingots_of_10-15cm_diameter?$

A. By crystal pulling process
B. By crystal melting process
C. By crystal growing process
D. All of the mentioned
Answer» B. By crystal melting process
Discussion
4.

Oxidation process in silicon planar technology is also called a?

A. Photo oxidation
B. Silicon oxidation
C. Vapour oxidation
D. Thermal oxidation
Answer» E.
Discussion
5.

At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2µm?$

A. 0-105<sup>o</sup>c
B. 950-1115<sup>o</sup>c
C. 200-850<sup>o</sup>c
D. 350-900<sup>o</sup>c
Answer» C. 200-850<sup>o</sup>c
Discussion
6.

Mention the chemical reaction for oxidation process

A. Si + 2H<sub>2</sub>O –> SiO<sub>2</sub> + 2H<sub>2</sub>
B. Si + O<sub>2</sub> –> SiO<sub>2</sub>
C. 2Si + 2H<sub>2</sub>O –> 2SiO<sub>2</sub> + 2H<sub>2</sub>
D. 2Si + 2H<sub>2</sub>O + 2O<sub>2</sub> –> 2SiO<sub>2</sub> + 2H<sub>2</sub> + O<sub>2</sub>
Answer» B. Si + O<sub>2</sub> ‚Äö√Ñ√∂‚àö√ë‚àö¬®> SiO<sub>2</sub>
Discussion
7.

Why oxidation process is required?

A. To protect against contamination
B. To use it for fabrication various components
C. To prevent diffusion of impurities
D. All of the mentioned
Answer» E.
Discussion
8.

Which of the following is used to obtain silicon crystal structure while fabricating Integrating Circuits?

A. Oxidation
B. Epitaxial growth
C. Photolithography
D. Silicon wafer preparations
Answer» C. Photolithography
Discussion
9.

Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process?

A. Cup
B. Boats
C. Ingots
D. Crucible
Answer» C. Ingots
Discussion
10.

Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?

A. Bi-borane (B<sub>2</sub>H<sub>2</sub>)
B. Phosphine (PH<sub>3</sub>)
C. Boron chloride (BCl<sub>3</sub>)
D. Phosphorous pentoxide (P<sub>2</sub>O<sub>5</sub>)
Answer» B. Phosphine (PH<sub>3</sub>)
Discussion