At what temperature should the oxidation process be carried out to get – McqOptions

MCQOPTIONS

1.	At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2¬¨¬®¬¨¬µm?$
A.	0-105<sup>o</sup>c
B.	950-1115<sup>o</sup>c
C.	200-850<sup>o</sup>c
D.	350-900<sup>o</sup>c
Answer» C. 200-850<sup>o</sup>c

Discussion

No Comment Found

Related MCQs

IN_CRZOCHRALSKI_CRYSTAL_GROWTH_PROCESS,_THE_MATERIALS_ARE_HEATED_UP_TO?$
If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness?$
How_to_obtain_silicon_ingots_of_10-15cm_diameter?$
Oxidation process in silicon planar technology is also called a?
At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2¬¨¬®¬¨¬µm?$
Mention the chemical reaction for oxidation process
Why oxidation process is required?
Which of the following is used to obtain silicon crystal structure while fabricating Integrating Circuits?
Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process?
Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?