MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 26 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The alloys lattice matched to InP responds to wavelengths up to 1.7μm is? |
| A. | InAsSb |
| B. | III – V alloys |
| C. | InGaSb |
| D. | InGaAs |
| Answer» E. | |
| 2. |
For fabrication of semiconductor photodiodes, there is a drawback while considering _________________ |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» E. | |
| 3. |
________________ photodiodes have large dark currents. |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» D. Germanium | |
| 4. |
A photodiode should be chosen with a ________________ less than photon energy. |
| A. | Direct absorption |
| B. | Band gap energy |
| C. | Wavelength range |
| D. | Absorption coefficient |
| Answer» E. | |
| 5. |
The wavelength range of interest for Germanium is __________ |
| A. | 0.8 to 1.6 μm |
| B. | 0.3 to 0.9 μm |
| C. | 0.4 to 0.8 μm |
| D. | 0.9 to 1.8 μm |
| Answer» B. 0.3 to 0.9 μm | |
| 6. |
The semiconductor material for which the lowest energy absorption takes place is? |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» E. | |
| 7. |
In optical fiber communication, the only weakly absorbing material over wavelength band required is? |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» D. Germanium | |
| 8. |
Direct absorption requires assistance of photon. |
| A. | True |
| B. | False |
| Answer» C. | |
| 9. |
The absorption coefficient of semiconductor materials is strongly dependent on __________ |
| A. | Properties of material |
| B. | Wavelength |
| C. | Amount of light |
| D. | Amplitude |
| Answer» C. Amount of light | |
| 10. |
The photocurrent in a photodiode is directly proportional to absorption coefficient. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 11. |
The absorption of photons in a photodiode is dependent on __________ |
| A. | Absorption Coefficient α0 |
| B. | Properties of material |
| C. | Charge carrier at junction |
| D. | Amount of light |
| Answer» B. Properties of material | |
| 12. |
A_PHOTODIODE_SHOULD_BE_CHOSEN_WITH_A__________________LESS_THAN_PHOTON_ENERGY.?$ |
| A. | Direct absorption |
| B. | Band gap energy |
| C. | Wavelength range |
| D. | Absorption coefficient |
| Answer» E. | |
| 13. |
For fabrication of semiconductor photodiodes, there is a drawback while considering _________________$ |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» E. | |
| 14. |
_________________photodiodes_have_large_dark_currents.$ |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» D. Germanium | |
| 15. |
The alloys lattice matched to InP responds to wavelengths up to 1.7μm.$ |
| A. | InAsSb |
| B. | III – V alloys |
| C. | InGaSb |
| D. | InGaAs |
| Answer» E. | |
| 16. |
_________________ alloys can be fabricated in hetero-junction structures. |
| A. | InGaSb |
| B. | III – V alloys |
| C. | InGaAsP |
| D. | GaAsSb |
| Answer» C. InGaAsP | |
| 17. |
____________ alloys such as InGaAsP and GaAsSb deposited on InP and GaSb substrate. |
| A. | Ternary |
| B. | Quaternary |
| C. | Gain-guided |
| D. | III – V alloys |
| Answer» B. Quaternary | |
| 18. |
_________________ materials are potentially superior to germanium. |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | III – V alloys |
| Answer» E. | |
| 19. |
The wavelength range of interest for Germanium is? |
| A. | 0.8 to 1.6 μm |
| B. | 0.3 to 0.9 μm |
| C. | 0.4 to 0.8 μm |
| D. | 0.9 to 1.8 μm |
| Answer» B. 0.3 to 0.9 ‚âà√≠¬¨‚à´m | |
| 20. |
The semiconductor material for which the lowest energy absorption takes place is : |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» E. | |
| 21. |
The threshold for indirect absorption occurs at wavelength __________ |
| A. | 3.01 μm |
| B. | 2.09 μm |
| C. | 0.92 μm |
| D. | 1.09 μm |
| Answer» E. | |
| 22. |
In optical fiber communication, the only weakly absorbing material over wavelength band required is: |
| A. | GaAs |
| B. | Silicon |
| C. | GaSb |
| D. | Germanium |
| Answer» D. Germanium | |
| 23. |
Direct absorption requires assistance of photon. State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» C. | |
| 24. |
The absorption coefficient of semiconductor materials is strongly dependent on |
| A. | Properties of material |
| B. | Wavelength |
| C. | Amount of light |
| D. | Amplitude |
| Answer» C. Amount of light | |
| 25. |
The photocurrent in a photodiode is directly proportional to absorption coefficient. State whether the given statement is true or false? |
| A. | True |
| B. | False |
| Answer» B. False | |
| 26. |
The absorption of photons in a photodiode is dependent on: |
| A. | Absorption Coefficient α<sub>0</sub> |
| B. | Properties of material |
| C. | Charge carrier at junction |
| D. | Amount of light |
| Answer» B. Properties of material | |