A. Impurity of lower group creates n-type semiconductors
B. Impurity of higher group creates p-type semiconductors
C. Extrinsic semiconductors are formed by doping impurity
D. Intrinsic semiconductors become conductors when temperature is raised
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Correct Answer – b,c
(a) is false because silicon doped with eletron rich impurity is n-type semiconductor. (d) is false because conductivity of n-type semiconductor increases due to extra electrons and not due to vacancy.
Correct Answer – B::C
Correct Answer – B,C
silicon soped with an electron rich ompurity is an n-type semiconductor , Condcity of n- type semiconductor is due to presence of free electron delocalisation of electrons increase the conductivity of deped silicon due to increase in mobility of electron.
Correct Answer – D
Intrinsic semiconductors are insulators at room temperature and become semiconductors when temperature is raised.