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Yash Dev Garg
Yash Dev Garg
Asked: 3 years ago2022-11-08T01:13:23+05:30 2022-11-08T01:13:23+05:30In: General Awareness

Which of the following statements are true about semiconductors?
A. Impurity of lower group creates n-type semiconductors
B. Impurity of higher group creates p-type semiconductors
C. Extrinsic semiconductors are formed by doping impurity
D. Intrinsic semiconductors become conductors when temperature is raised

Which of the following statements are true about semiconductors?
A. Impurity of lower group creates n-type semiconductors
B. Impurity of higher group creates p-type semiconductors
C. Extrinsic semiconductors are formed by doping impurity
D. Intrinsic semiconductors become conductors when temperature is raised
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  1. 1c28b
    2022-11-05T16:42:09+05:30Added an answer about 3 years ago

    Correct Answer – D
    Intrinsic semiconductors are insulators at room temperature and become semiconductors when temperature is raised.

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Fardeen Ricky Tak
Fardeen Ricky Tak
Asked: 3 years ago2022-11-07T06:33:25+05:30 2022-11-07T06:33:25+05:30In: General Awareness

Which of the following statements are true about semiconductors ?
A. Silicon doped with electron rich impurity is a p-type semiconductor
B. Silicon doped with an electron rich impurity is an n-type semiconductor
C. Delocalised electrons increase the conductivity of doped silicon
D. An electron vacancy increases the conductivity of n-type semiconductor

Which of the following statements are true about semiconductors ?
A. Silicon doped with electron rich impurity is a p-type semiconductor
B. Silicon doped with an electron rich impurity is an n-type semiconductor
C. Delocalised electrons increase the conductivity of doped silicon
D. An electron vacancy increases the conductivity of n-type semiconductor
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  1. 61542
    2022-11-04T09:35:56+05:30Added an answer about 3 years ago

    Correct Answer – b,c
    (a) is false because silicon doped with eletron rich impurity is n-type semiconductor. (d) is false because conductivity of n-type semiconductor increases due to extra electrons and not due to vacancy.

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Naina Mukherjee
Naina Mukherjee
Asked: 3 years ago2022-11-05T04:54:48+05:30 2022-11-05T04:54:48+05:30In: General Awareness

Which of the following statements are true about semiconductors ?
A. Silicon doped with electron rich impurity is a p-type semiconductor
B. Silicon doped with an electron rich impurity is an n-type semiconductor
C. Delocalised electrons increase the conductivity of doped silicon
D. An electron vacancy increases the conductivity of n-type semiconductor

Which of the following statements are true about semiconductors ?
A. Silicon doped with electron rich impurity is a p-type semiconductor
B. Silicon doped with an electron rich impurity is an n-type semiconductor
C. Delocalised electrons increase the conductivity of doped silicon
D. An electron vacancy increases the conductivity of n-type semiconductor
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  1. 9e575
    2022-10-31T02:47:57+05:30Added an answer about 3 years ago

    Correct Answer – B::C

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Kalyani Nagarajan
Kalyani Nagarajan
Asked: 3 years ago2022-11-01T14:02:00+05:30 2022-11-01T14:02:00+05:30In: General Awareness

which of the following statements are true about semiconductor ?
A. silicon doped with electron rich impurity is a type semiconductor
B. Silicon doped with an electrons rich impuriy is an n-type semipucoter
C. Delocalised electrons increase the conductivity of doped silicon
D. An electron vacancy incease the conductivity of n- type semiconductor

which of the following statements are true about semiconductor ?
A. silicon doped with electron rich impurity is a type semiconductor
B. Silicon doped with an electrons rich impuriy is an n-type semipucoter
C. Delocalised electrons increase the conductivity of doped silicon
D. An electron vacancy incease the conductivity of n- type semiconductor
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  1. 8be7a
    2022-11-04T14:59:44+05:30Added an answer about 3 years ago

    Correct Answer – B,C
    silicon soped with an electron rich ompurity is an n-type semiconductor , Condcity of n- type semiconductor is due to presence of free electron delocalisation of electrons increase the conductivity of deped silicon due to increase in mobility of electron.

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