Use the temperature T= 300 K unless otherwise stated. In germanium se – McqOptions

MCQOPTIONS

1.	Use the temperature T= 300 K unless otherwise stated. In germanium semiconductor material at T 400 K the intrinsic concentration is (x 10^14 per cc)
A.	26.8
B.	18.4
C.	26.8b) 18.4c) 8.5
D.	3.6View Answer
Answer» D. 3.6View Answer

Discussion

No Comment Found

Related MCQs

A particular intrinsic semiconductor has a resistivity of 50 (ohm-cm) at T = 300 K and 5 (ohm-cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is
Six volts is applied across a 2 cm long semiconductor bar. The average drift velocity is 104 cms. The electron mobility is
A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )
In germanium semiconductor at T 300 K, the acceptor concentrations is Na 1013 cm3 and donor concentration is Nd 0. The thermal equilibrium concentration p0 is
Two semiconductor material have exactly the same properties except that material A has a bandgap of 1.0eV and material B has a bandgap energy of 1.2 eV. The ratio of intrinsic concentration of material A to that ofmaterial B is
Use the temperature T= 300 K unless otherwise stated. In germanium semiconductor material at T 400 K the intrinsic concentration is (x 10^14 per cc)
A number A is said to be arithmetic mean between two numbers a and b if a,A,b is
for a set A and the universal set U, A ∪ Ac
A number H is said to be the harmonic mean between two numbers a and b if a,H,b is
The common ratio of a geometric sequence cannot be