The potential difference between the base and the collector Vcb in a p – McqOptions

MCQOPTIONS

1.	The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________
A.	-0.2 V
B.	-0.5V
C.	0.2 V
D.	0.5 V
Answer» C. 0.2 V

Discussion

No Comment Found

Related MCQs

Which of the following is true for a pnp transistor in saturation region?
WHICH_OF_THE_FOLLOWING_IS_TRUE_FOR_A_PNP_TRANSISTOR_IN_SATURATION_REGION??$
WHICH_OF_THE_FOLLOWING_IS_TRUE_FOR_A_PNP_TRANSISTOR_IN_ACTIVE_REGION??$
For a pnp transistor in the active region the value of Vce (potential difference between the collector and the base) i?
The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________
Which of the following is true for a npn transistor in the saturation region?
Which of the following is true for the saturation region of BJT transistor?
Which of the following is true for a typical active region of an npn transistor?
Which of the following is true for the cut-off region in an npn transistor?
Which of the following condition is true for cut-off mode?