The enhanced electric field and tunnelling mechanisms are associated w – McqOptions

MCQOPTIONS

1.	The enhanced electric field and tunnelling mechanisms are associated with the formation of _____ structures.
A.	mpSi
B.	MpSi
C.	‚âà√≠¬¨‚à´pSi
D.	pSi
Answer» B. MpSi

Discussion

No Comment Found

Related MCQs

A_PRE-TREATMENT_BY_A_LITHOGRAPHIC_PATTERNING_STAGE_ENABLES_THE_PRODUCTION_OF_ORDERED_PORE_DISTRIBUTION.?$
Among_all_the_etching_parameters,_the_etching_current_density_(J)_is_the_most_critical_factor.$
For a given level of doping, the growth of MpSi in n-type silicon substrates can be controlled by____?
The neutral state is achieved when the concentration of electrons is equal to the concentration of electronic holes and ionized donors.
In the pore formation mechanism of MpSi, electronic holes initiate the dissolution process of silicon.
The enhanced electric field and tunnelling mechanisms are associated with the formation of _____ structures.
_____ mechanism is associated with the pore formation in ‚âà√≠¬¨‚à´pSi structures.$
Why the pore characteristics of the resulting pSi structures depend upon the doping type? Choose the most correct option.
The resulting pore structure in pSi is intrinsically dependent on the doping level of the Si wafer.
Morphology of ‚âà√≠¬¨‚à´pSi and mpSi can be defined by a concrete spatial distribution.