MCQOPTIONS
Bookmark
Saved Bookmarks
→
Electronic Devices Circuits
→
Transistor Case Heat Sinks in Electronic Devices Circuits
→
The drain of FET is analogous to BJT..
1.
The drain of FET is analogous to BJT
A.
collector
B.
emitter
C.
base
D.
drain
Answer» B. emitter
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
Input signal of common drain amplifier is applied to the gate through ________
The drain of FET is analogous to BJT
A common source amplifier has _______
A FET circuit has a transconductance of 2500 µ seconds and drain resistance equals to 10Kohms than voltage gain will be __________
Ideal maximum voltage for common drain amplifier is _________
INPUT_SIGNAL_OF_COMMON_DRAIN_AMPLIFIER_IS_APPLIED_TO_THE_GATE_THROUGH_________?$
THE_DRAIN_OF_FET_IS_ANALOGOUS_TO_BJT?$
D-MOSFET in case of common source amplifier can operate with gate to source voltage zero at ______
A common gate amplifier has _______
Voltage gain of common drain amplifier is always slightly less than _____
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply