MCQOPTIONS
Bookmark
Saved Bookmarks
→
Manufacturing Processes
→
Friction Welding in Manufacturing Processes
→
Length of the silicon dioxide pillars is dependant..
1.
Length of the silicon dioxide pillars is dependant on the etching time and the pore length.
A.
True
B.
False
Answer» B. False
Show Answer
Discussion
No Comment Found
Post Comment
Related MCQs
IN_THE_BEGINNING_OF_THE_ELECTROCHEMICAL_ETCHING,_SOME_OF_THESE_PITS_PRESENT_ON_THE_SURFACE_OF_THE_SILICON_WAFER_DEVELOP_INTO_MESOPORES.?$
THE_ELECTRIC_FIELD_STRENGTH_DECREASES_AROUND_THE_DEPRESSIONS_PRESENT_ON_THE_SILICON_WAFER_SURFACE.?$
Avalanche breakdown is the dominant mechanism at high doping densities?
When the doping density in the silicon wafer is increased, then _____
Arrays of cone-like silicon dioxide pillars can be produced using _____
It possible to produce arrays of silicon dioxide pillars inside _____
Lithographic technique can be used for patterning the Si wafer.
Length of the silicon dioxide pillars is dependant on the etching time and the pore length.
Silicon oxide layer can be removed using HF solution.
Bending curvature of silicon wafers varies ______ with the specific area of the MpSi structure.
Reply to Comment
×
Name
*
Email
*
Comment
*
Submit Reply