In n-channel enhancement type MOSFET, as VGS is increased beyond the t

1.	In n-channel enhancement type MOSFET, as VGS is increased beyond the threshold level
A.	Drain current will decrease
B.	Density of free carriers in the induced channel will remain constant
C.	Density of free carriers in the induced channel will decrease
D.	Density of free carriers in the induced channel will increase
Answer» E.

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In n-channel enhancement type MOSFET, as VGS is increased beyond the threshold level

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