Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

Given, Vgs is the gate-source voltage, Vds is the drain source voltage

1.	Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are
A.	Vgs < Vth; Vds ≥ Vgs - Vth
B.	Vgs > Vth; Vds ≥ Vgs – Vth
C.	Vgs > Vth; Vds ≤ Vgs – Vth
D.	Vgs < Vth; Vds ≤ Vgs – Vth
Answer» C. Vgs > Vth; Vds ≤ Vgs – Vth

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Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are
Power dissipation is negligibly small in:

Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

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