For a given n-MOS capacitor with substrate doping of NA=1017 cm−3, oxide thickness 20 nm, εox= 3.9 εo the values of oxide capacitance and flat band capacitance are respectively given as(use εo = 8.85×10−14 F cm−1):

For a given n-MOS capacitor with substrate doping of NA=1017 cm−3, o

1.	For a given n-MOS capacitor with substrate doping of NA=1017 cm−3, oxide thickness 20 nm, εox= 3.9 εo the values of oxide capacitance and flat band capacitance are respectively given as(use εo = 8.85×10−14 F cm−1):
A.	142 nF/cm2 and 172 nF/cm2
B.	172 nF/cm2 and 142 nF/cm2
C.	71 nF/cm2 and 86 nF/cm2
D.	86 nF/cm2 and 71 nF/cm2
Answer» C. 71 nF/cm2 and 86 nF/cm2

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For a given n-MOS capacitor with substrate doping of NA=1017 cm−3, oxide thickness 20 nm, εox= 3.9 εo the values of oxide capacitance and flat band capacitance are respectively given as(use εo = 8.85×10−14 F cm−1):
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For a given n-MOS capacitor with substrate doping of NA=1017 cm−3, oxide thickness 20 nm, εox= 3.9 εo the values of oxide capacitance and flat band capacitance are respectively given as(use εo = 8.85×10−14 F cm−1):

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